MTP1306 ONSEMI | Alldatasheet

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 Semiconductor Components Industries, LLC, 2000 September, 2004 − Rev. XXX

1 Publication Order Number:

75 Amps, 30 Volts

N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.

  • Avalanche Energy Specified
  • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 30 Vdc Drain−to−Gate Voltage (RGS = 1.0 MΩ ) VDGR 30 Vdc Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 20 Vdc Vpk Drain Current − Continuous − Continuous @ 100°C − Single Pulse (tp ≤ 10 µs) ID ID IDM 225 Adc Apk Total Power Dissipation Derate above 25°C PD 150 1.2 Watts W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25 Ω ) EAS 280 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient R θJC R θJA 0.8 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5.0 seconds TL 260 °C

75 AMPERES

30 VOLTS

R DS(on) = 6.5 mΩ Device Package Shipping

ORDERING INFORMATION

MTP1306 TO−220AB 50 Units/Rail TO−220AB CASE 221A STYLE 5 http://onsemi.com N−Channel D S G MARKING DIAGRAM & PIN ASSIGNMENT MTP1306 = Device Code LL = Location Code Y = Year WW = Work Week MTP1306 LLYWW Gate Source Drain Drain Preferred devices are recommended choices for future use and best overall value.

http://onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) V(BR)DSS 30 − − Vdc Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 100 µAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) VGS(th) 1.0 1.5 2.0 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 38 Adc) (VGS = 5.0 Vdc, ID = 38 Adc) R DS(on) 5.8 7.4 6.5 8.5 m Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 75 Adc) (VGS = 10 Vdc, ID = 38 Adc, TJ = 150°C) VDS(on) 0.44 0.5 0.38 Vdc Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc) gFS 15 55 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0V d C iss − 2560 3584 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss − 1305 1827 Transfer Capacitance f = 1.0 MHz) C rss − 386 772 SWITCHING CHARACTERISTICS (Note 2.) Turn−On Delay Time td(on) − 17 35 ns Rise Time (VDD = 15 Vdc, ID = 75 Adc, VGS =50V d c tr − 170 340 Turn−Off Delay Time VGS = 5.0 Vdc, R G = 4.7 Ω ) td(off) − 68 136 Fall Time R G 4.7 Ω ) tf − 145 290 Gate Charge Q T − 50 70 nC (VDS = 24 Vdc, ID = 75 Adc, Q 1 − 8.3 −(VDS 24 Vdc, ID 75 Adc, VGS = 5.0 Vdc) Q 2 − 25.3 − Q 3 − 17.2 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 20 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.75 0.64 1.1 Vdc Reverse Recovery Time trr − 84 − ns (I =2 0A d c V = 0 Vdc ta − 35 − (IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb − 53 − Reverse Recovery Stored Charge dIS/dt = 100 A/µs) Q RR − 0.13 − µC 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.

be charged by current from the generator. and Q2 and VGSP are read from the gate charge curve. on−state when calculating td(off). is difficult to measure and, consequently, is not specified. maintain a value of unity regardless of the switching speed. however, snubbing reduces switching losses. Figure 7. Capacitance Variation

http://onsemi.com PACKAGE DIMENSIONS TO−220 THREE−LEAD TO−220AB CASE 221A−09 ISSUE AA STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE−T− C ST U R J ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION CENTRAL/SOUTH AMERICA: Spanish Phone: 303−308−7143 (Mon−Fri 8:00am to 5:00pm MST) Email: ONlit−spanish@hibbertco.com Toll−Free from Mexico: Dial 01−800−288−2872 for Access − then Dial 866−297−9322 ASIA/PACIFIC: LDC for ON Semiconductor − Asia Support Phone : 303−675−2121 (Tue−Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001−800−4422−3781 Email: ONlit−asia@hibbertco.com JAPAN : ON Semiconductor, Japan Customer Focus Center 4−32−1 Nishi−Gotanda, Shinagawa−ku, Tokyo, Japan 141−0031 Phone : 81−3−5740−2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. MTP1306/D NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303−675−2167 or 800−344−3810 Toll Free USA/Canada N. American Technical Support: 800−282−9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor − European Support German Phone : (+1) 303−308−7140 (Mon−Fri 2:30pm to 7:00pm CET) Email: ONlit−german@hibbertco.com French Phone : (+1) 303−308−7141 (Mon−Fri 2:00pm to 7:00pm CET) Email: ONlit−french@hibbertco.com English Phone: (+1) 303−308−7142 (Mon−Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL−FREE ACCESS*: 00−800−4422−3781 *Available from Germany, France, Italy, UK, Ireland