MTP1306 MOTOROLA | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0065/C0100/C0118/C0097/C0110/C0099/C0101 /C0073/C0110/C0102/C0111/C0114/C0109/C0097/C0116/C0105/C0111/C0110 /C0072/C0068/C0084/C0077/C0079/C0083 /C0069/C0045/C0070/C0069/C0084/C0046 /C0072/C0105/C0103/C0104 /C0068/C0101/C0110/C0115/C0105/C0116/C0121 /C0080/C0111/C0119/C0101/C0114 /C0070/C0069/C0084 N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commuta- tion modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.

  • Avalanche Energy Specified
  • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 30 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ ) VDGR 30 Vdc Gate–to–Source Voltage — Continuous — Non–Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 20 Vdc Vpk Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) ID ID IDM 225 Adc Apk Total Power Dissipation Derate above 25°C PD 150 1.2 Watts W/°C Operating and Storage Temperature Range TJ, Tstg –55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25 Ω ) EAS 280 mJ Thermal Resistance — Junction–to–Case — Junction–to–Ambient R θJC R θJA 0.8 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5.0 seconds TL 260 °C This document contains information on a new product. Specifications and information herein are subject to change without notice. E–FET and HDTMOS are trademarks of Motorola, Inc. Order this document by MTP1306/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0084/C0080/C0049/C0051/C0048/C0054 TMOS POWER FET

75 AMPERES

30 VOLTS

R DS(on) = 0.0065 OHM CASE 221A–06 TO–220AB  Motorola, Inc. 1997

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2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) V(BR)DSS 30 — — Vdc Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 100 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) VGS(th) 1.0 1.5 2.0 Vdc Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 38 Adc) (VGS = 5.0 Vdc, ID = 38 Adc) R DS(on) 5.8 7.4 6.5 8.5 m /C0087 Drain–to–Source On–Voltage (VGS = 10 Vdc, ID = 75 Adc) (VGS = 10 Vdc, ID = 38 Adc, TJ = 150°C) VDS(on) 0.44 0.5 0.38 Vdc Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc) gFS 15 55 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vdc V 0 Vdc C iss — 2560 3584 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss — 1305 1827 Transfer Capacitance f = 1.0 MHz) C rss — 386 772 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (V 15 Vd I 75 Ad td(on) — 17 35 ns Rise Time (VDD = 15 Vdc, ID = 75 Adc, VGS =50V d c tr — 170 340 Turn–Off Delay Time VGS = 5.0 Vdc, R G = 4.7 Ω ) td(off) — 68 136 Fall Time G ) tf — 145 290 Gate Charge (V 24 Vd I 75 Ad Q T — 50 70 nC (VDS = 24 Vdc, ID = 75 Adc, Q 1 — 8.3 —( DS , D , VGS = 5.0 Vdc) Q 2 — 25.3 — Q 3 — 17.2 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 20 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.75 0.64 1.1 Vdc Reverse Recovery Time (I 20 Ad V 0 Vd trr — 84 — ns (IS = 20 Adc, VGS = 0 Vdc, ta — 35 —(S , GS , dIS/dt = 100 A/µs) tb — 53 — Reverse Recovery Stored Charge Q RR — 0.13 — µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature.

4 Motorola TMOS Power MOSFET Transistor Device Data

by recognizing that the power MOSFET is charge controlled. by current from the generator. and Q2 and VGSP are read from the gate charge curve. on–state when calculating td(off). voltage at the source which reduces the gate drive current. tion of drain current, the mathematical solution is complex. sure and, consequently, is not specified. Figure 7. Capacitance Variation

6 Motorola TMOS Power MOSFET Transistor Device Data

Figure 11. Reverse Recovery Time (trr) Figure 12. Maximum Rated Forward Biased Figure 13. Maximum Avalanche Energy versus

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8 Motorola TMOS Power MOSFET Transistor Device Data

CASE 221A–06 (TO–220AB) ISSUE Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE–T– C ST U R J Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET : http://motorola.com/sps MTP1306/D◊