MTP12P10 ONSEMI | Alldatasheet

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Technical content

Features

  • Silicon Gate for Fast Switching Speeds − Switching Times Specified at 100°C
  • Designer’s Data − IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature
  • Rugged − SOA is Power Dissipation Limited
  • Source−to−Drain Diode Characterized for Use With Inductive Loads
  • Pb−Free Package is Available* MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage VDSS 100 Vdc Drain−Gate Voltage (RGS = 1.0 M/C0087) VDGR 100 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 /C0109s) VGS VGSM ±20 ±40 Vdc Vpk Drain Current − Continuous Drain Current − Pulsed ID IDM Adc Total Power Dissipation Derate above 25°C PD 75 0.6 W W/°C Operating and Storage Temperature Range TJ, Tstg −65 to 150 °C Thermal Resistance − Junction−to−Case − Junction−to−Ambient° R/C0113JC R/C0113JA 1.67 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. D S G

12 AMPERES, 100 VOLTS

RDS(on) = 300 m/C0087 Device Package Shipping

ORDERING INFORMATION

MTP12P10 TO−220AB 50 Units/Rail TO−220AB CASE 221A STYLE 5 P−Channel MARKING DIAGRAM AND PIN ASSIGNMENT MTP12P10 = Device Code A = Location Code Y = Year WW = Work Week G = Pb−Free Package MTP12P10G AYWW Gate Source Drain Drain Preferred devices are recommended choices for future use and best overall value. MTP12P10G TO−220AB (Pb−Free)

50 Units/Rail

http://onsemi.com

http://onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) V(BR)DSS 100 − Vdc Zero Gate Voltage Drain Current (VDS = Rated VDSS, VGS = 0) (VDS = Rated VDSS, VGS = 0, TJ = 125°C) IDSS 100 /C0109Adc Gate−Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF − 100 nAdc Gate−Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR − 100 nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) TJ = 100°C VGS(th) 2.0 1.5 4.5 4.0 Vdc Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 6.0 Adc) RDS(on) − 0.3 /C0087 Drain−Source On−Voltage (VGS = 10 V) (ID = 12 Adc) (ID = 6.0 Adc, TJ = 100°C) VDS(on) 4.2 3.8 Vdc Forward Transconductance (VDS = 15 V, ID = 6.0 A) gFS 2.0 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) See Figure 10 Ciss − 920 pF Output Capacitance Coss − 575 Reverse Transfer Capacitance Crss − 200 SWITCHING CHARACTERISTICS (Note 1) (TJ = 100°C) Turn−On Delay Time (VDD = 25 V, ID = 0.5 Rated ID, RG = 50 /C0087) See Figures 12 and 13 td(on) − 50 ns Rise Time tr − 150 Turn−Off Delay Time td(off) − 150 Fall Time tf − 150 Total Gate Charge (VDS = 0.8 Rated VDSS, ID = Rated ID, VGS = 10 V) See Figure 11 Qg 33 (Typ) 50 nC Gate−Source Charge Qgs 16 (Typ) − Gate−Drain Charge Qgd 17 (Typ) − SOURCE−DRAIN DIODE CHARACTERISTICS (Note 1) Forward On−Voltage (IS = Rated ID, VGS = 0) VSD 4.0 (Typ) 5.5 Vdc Forward Turn−On Time ton Limited by stray inductance Reverse Recovery Time trr 300 (Typ) − ns INTERNAL PACKAGE INDUCTANCE (TO−204) Internal Drain Inductance, (Measured from the contact screw on the header closer to the source pin and the center of the die) Ld 5.0 (Typ) − nH Internal Source Inductance (Measured from the source pin, 0.25″ from the package to the source bond pad) Ls 12.5 (Typ) INTERNAL PACKAGE INDUCTANCE (TO−220) Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) Ld 3.5 (Typ) 4.5 (Typ) nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) Ls 7.5 (Typ) − 1. Pulse Test: Pulse Width ≤ 300 /C0109s, Duty Cycle ≤ 2%.

http://onsemi.com PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AB NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.020 0.055 0.508 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE−T− C ST U R J ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 MTP12P10/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative