MTM12P10 MOTOROLA | Alldatasheet

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MOTOROLA SC (XSTRS/R F) BBE D MM 6367254 0098583 093 MEMOTL MOTOROLA = SEMICONDUCTOR Sa TECHNICAL DATA . , Designer’s Data Sheet MTP12P06 Power Field Effect Transistor MTP12P10 P-Channel Enhancement-Mode - Silicon Gate ‘TMOS POWER FETs

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These TMOS Power FETs are designed for medium voltage, Rpsion) = 0.3 OHM high speed power switching applications such as switching regu- ® 60 and 100 VOLTS lators, converters, solenoid and relay drivers. | Twos © Silicon Gate for Fast Switching Speeds — Switching Times ° Specified at 100°C © Designer's Data — Ipsg, Vps(on): VGSith) 2nd SOA Specified D at Elevated Temperature ® Rugged — SOA is Power Dissipation Limited ® Source-to-Drain Diode Characterized for Use With Inductive Loads G s MAXIMUM RATINGS Lame | som | | Drain-Gate Voltage VpGR 100 Vde (Ags = 1 MQ) Gate-Source Voltage — Continuous Vos +20 Vde MTM12P10 — Non-repetitive (tp = 50 us) VGsmM +40 Vpk CASE 1-07 Drain Current ‘Ade TO-204AA Continuous 12 Pulsed 28 Total Power Dissipation @ Tc = 25°C 5 Watts Derate above 25°C 06 wre oO [_Operating and Storage Temperature Range | Tu.Tatg | -e5to1s0 | °c | ‘THERMAL CHARACTERISTICS y Thermal Resistance cw /, Junction to Case Resc J Amb to26| Rua [30 Junction to Ambient JA swrP12P06 70-220 a MTP12P10 Maximum Lead Temperature for Soldering T0-220| 7, | 260 ~~ | °C CASE 2218-06 Purposes, 1/8" from case for 5 seconds TO-204 [30s TO-220AB Designer's Data for “Worst Casa” Conditions — The Designer's Data Sheet permits the design of most circus entirely from the information presented BOA Limit curves — representing bounores on devies characterstes are given to faciate “worst case” design eee MOTOROLA TMOS POWER MOSFET DATA 3-189

MTM/MTP12P06, 10 MOTOROLA SC (XSTRS/P F) b8E D M@M™ 6367254 0098584 TeT MBNOTL ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) [ie Semi [| em OFF CHARACTERISTICS Drain-Source Breakdown Voltage ‘V(BR)DSS Vde (Vgg = 0, Ip = 0.25 mA) MTM/MTP12P06 60 MTM/MTP12P10 100 Zero Gate Voltage Drain Current Ade (Vps = Rated Voss, Ves = 0) (Vps = Rated Voss, Vos = 0, Ty = 125°C) Gate-Body Leakage Current, Forward (VggF = 20 Vdc, Vps = 0) [icsse [| — | 100 | mace | Gate-Body Leakage Current, Reverse (VGgR = 20 Vdc, Vps = 0) [ tcsse | — | 100 | mad | ON CHARACTERISTICS* Gate Threshold Voltage (Vps = Vas. Ip = 1 mA) Vesith) 2 Vee Ty = 100°C 15 ‘Static Drain-Source On-Resistance (VGg = 10 Vde, Ip = 6 Adc) Rosin | — | 03 | Ohm | Drain-Source On-Voltage (Vgg = 10 V) Vosion) Vde {Ip = 12 Adc) ip = 6 Adc, Ty = 100°C) OYNAMIC CHARACTERISTICS ee ey SWITCHING CHARACTERISTICS* (T) = 100°C) i _ Tee onan [os [ = J wo | Turn-Off Delay Time Seofigures 12and13 |_ tao | — [150 | SOURCE DRAIN DIODE CHARACTERISTICS" [oe Paone [= [| INTERNAL PACKAGE INDUCTANCE (TO-204) Internal Drain Inductance lg 5 (Typ) nH (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance ls 125 (Typ) (Measured from the source pin, 0.25” from the package to the source bond pad) INTERNAL PACKAGE INDUCTANCE (T0-220) Internal Drain inductance la (Measured from the contact screw on tab to center of die) 3.5 (Typ) (Measured from the drain lead 0.25” from package to center of die) 45 (Typ) Internal Source Inductance ly 75 (Typ) (Measured from the source lead 0.25" from package to source bond pad.) ‘*Pulse Test: Pulse Width < 300 us, Duty Cycle = 2%. a MOTOROLA TMOS POWER MOSFET DATA 3-190

Figure 1. On-Region Characteristics Figure 2. Gate-Threshold Voltage Variation Figure 3. Transfer Characteristics Figure 4. aeaetamoce Voltage Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation

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Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching to designers of linear systems. The curves are based on switching times less than one microsecond. Its Use” provides detailed instructions. Figure 9. Thermal Response

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Figure 10. Capacitance Variation Figure 11. Gate Charge versus

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Figure 12. Switching Test Circuit Figure 13, Switching Waveforms