MTP12N18

IRF230-233 FAIRCHILD | Alldatasheet

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. FAIRCHILD SEMICONDUCTOR nee e teense ceeee eee OY ODE Bseesu74 oo27879 uf ed | FAIRCHILD MTP12N18/12N20 T2913 ‘A Schlumberger Company N-Channel Power MOSFETs, | 12 A, 150-200 V - ; : Power And Discrete Division j i i Description TO-204AA T0-220AB | These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed S applications, such as switching power supplies, UPS, AC o> and DC motor controls, relay and solenoid drivers and Ds high energy pulse circuits. Wy, ? ® FY ¢ Low Ros(en) ® Vos Rated at +20 V Sour comme © Silicon Gate for Fast Switching Speeds © Iss, Vosion. Specified at Elevated Temperature arose iarest $ fussed IRF232 IRF632 1 @ Low Drive Requirements laeese loess 5 @ Ease of Paralleling IIPLONIe : MTP12N20 Product Summary Ip at Ip at Part Number Ros (en) To = 25°C Te = 100°C Case Style : Notes . For information concerning connection diagram and package outline, refer to | Section 7 eee 2.02

. IL : FAIRCHILD SEMICONDUCTOR = OE 34E5b74 Ooe7aao o A. i : . IRF230-233/IRF630-633 : MTP12N18/12N20 T-39-11 : : =o ~ i ! T 39-13 . — i Maximum Ratings | Rating . 1RF220/222 Rating 1RF620/622 Rating 1RF222/223 symbol MTP7N20 MTP7N18 IRF622/623 Unit Voor Drain to Gate Voltage’ v Rigs = 20 k2 Ty. Taig | Operating Junction and 65 to +150 | 65 to +160 55 to +150 °c Storage Temperatures ! in Maximum Lead Temperature 275 275 275 °c i for Soldering Purposes, i 4/8" From Case for 5 Maximum Thermal Characteristics IRF220- 233 IRF630 - 633 MTP12N18/20 . Rac | Thermal Resistance, 1.67 °C/W Junction to Case Pp Total Power Dissipation 7 w H at To = 25°C F | Electrical Characteristics (Tc = 25°C unless otherwise noted) symbol |____Characteranio ——|_in_ [mae | unit Test Coneitions i Off Characteristics | : Veeryoss | Drain Source Breakdown Voltage | | | Ves =0 V, Ip = 250 pA | : 1RF290/232/630/632/ i MTP12N20 loss Zero Gate Voltage Drain Curent |__| __—-250_~| HA _| Vos~Rated Voss, Vas = 0 V uA | Vpg=0.8x Rated Voss, Vas =0 V, To = 125°C less Gate-Body Leakage Current | | | m Ves = £20 V, Vos=0 V IRF630-633/ +500 MTP12N18/12N20 i el 2.98

. FAIRCHILD SEMICONDUCTOR au pe ayeae74 one7aa2 2 I | IRF230-233/IRF630-633 : | MTP12N18/12N20 T-39-11 . | TAINS | ——— Electrical Characteristics (Cont) (Tc = 25°C unless otherwise noted) On Characteristics Vas(n) | Gate Threshold Voltage [| | IRF230/233/630/633 [ 20 | 40 | Ip = 250 WA, Vos = Ves t MTP12N18/12N20 | 20 | 45 | Ip=1 mA, Vos = Ves ! Roston) | Static Drain-Source On-Resistance?| | S| Ves = 10 V, Ip =5.0 A : IRF292/283/632/633 re | ; MTP12N18/12N20 a ao lp=60A : Vps(on) | Drain-Source On-Voltage2 [fat | | Vas=10V; p= 60 A 42 Vv Ves = 10 V; Ip=6.0 A i To = 100°C ' Qs Forward Transconductance [30 | —s|- S$ &) | Vos 10 V, p= 50A Dynamic Characteristics Switching Characteristics (To = 25°C, Figures 1, 2)' i Res = 60 2 a (A : Q, Total Gate Charge nC | Vos= 10 V, Ip=12 A ; Vop = 120 V : i Ean 2.94

. r IRF230-233/IRF630-633 \\ [i MTP12N18/12N20 : ‘ T-39-11 i T 39S : aS 1 Electrical Characteristics (Cont.) (To = 25°C unless otherwise noted) | Source-Drain Diode Characteristics Vsp Diode Forward Voltage | 1 | 2 | v | IRF230/231/630/631 v Is=9.0 A; Veg=0 V IRF232/233/632/633 [42s | 18 [| V_ | 1s=80 A; Vos=0V ‘| Reverse Recovery Time | 450 || ns fig = 40 As Igldt= 25 Aus 2 | Te 26°C w +160" Ene Sn ed yt | a re arts paired on LEM TR tnt anspor | Typical Electrical Characteristics Figure 1 Switching Test Circuit Figure 2 Switching Waveforms vm Yoo ton ' tore aL ton): taorr) i” ; Boo vow saresee in ah { an | ow a te

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i ain. — | | af [ _pnseveors | Typical Performance Curves ’ Figure 4 Static Drain to Source Resistance Figure 3 Output Characteristics vs Drain Current «Leptin YER | , eet TT PRRRY Zacse RREEEED> 0 Vi feet [TT aan a ero omy Ze t a Soe [AC ese ‘Zoo 2 AEA AWA el “LELTELETL verona sunce vous onan conan A 2-95 oo _ ES

SS . - FAURCHILD SEMIconpucTOR 84 De s4eG74 oozzasa y Ce eam emae annem t . | IRF230-233/IRF630-633 MTP12N18/12N20 T-39-11 T3US a ! Typical Performance Curves (Cont.) | Figure 6 Temperature Variation of Gate to Figure 5 Transfer Characteristics Source Threshold Voltage wae T TTT] rT TT TTT] oe PRT TT pees | I V 1] Ss BEER PONE PSS LLNS vane an FLEET AT ACC CCO AT STANT

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Figure 7 Capacitance vs Drain to Source Voltage Figure fous ‘Gate Charge “ SOE PLC | | OES PIA EA Ee UU TTT = (Oe 0 oy 7 * « ° Figure 9 Forward Biased Safe Operating Area Figure 10 Transient Thermal Resistance vs Time for IRF230-233 and IRF630-633 for IRF230-233 and IRF630-633 CULT HN Sc SHi Sti Setters Fa NSN i: Binaueet= | | RRR NE je ee SE 2-96

"FAIRCHILD SEMICONDUCTOR au pe accez4 ooezaay a | - : | IRF230-233/IRF630-633 : | MTP12N18/12N20—7_39-17 : ae TT 39-12 : BE Typical Performance Curves (Cont) Figure 11 Forward Biased Safe Operating Area Figure 12 Transient Thermal Resistance vs Time for MTP12N18/12N20 for MTP12N18/12N20 ‘See “Too : EFHESESHaaSH HEE FHI FRE EE ;

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