MTP12N05E MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) BBE D MM 6367254 0098742 332 MENOTL MOTOROLA me SEMICONDUCTOR Sg TECHNICAL DATA . 7, Designer's Data Sheet MTP12N0O5E Power Field Effect Transistor Motorola Prefered Deviee N-Channel Enhancement-Mode ilicon Gate Silico MOS POWER FET This TMOS Power FET is designed for low voltage, high speed Fosia oz OHM power switching applications such as switching regulators, con- 50 VOLTS verters, solenoid and relay drivers. Tos © Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C © Designer's Data — Ipsg, Vps(on) VGsith) and SOA Specified o. at Elevated Temperature @ Rugged — SOA is Power Dissipation Limited ® Source-to-Drain Diode Characterized for Use With Inductive Loads G s MAXIMUM RATINGS | oron-Sourevotoge dass =f dC Drain-Gate Voltage VpcR Vde \\ (Res = 1 MO) y » Gate-Source Voltage Vy, Continuous Ves +20 Vde Wig Non-repetitive (tp < 50 usb VGsm +40 Vek Yf Drain Current Continuous Pulsed (CASE 2214-06 Total Power Dissipation @ Tc = 25°C 5 Watts T0-220AB Derate above 25°C 06 wre [Operating and Storage TemperawroRange | Tu Tew | wre | | THERMAL CHARACTERISTICS Thermal Resistance “Cw Junction to Case Junction to Ambient T0-204 Rea TO-220 Maximum Lead Temperature for Soldering 1 c Purposes, 1/8” from case for 5 seconds Preferred device is a Motorola recommended choice for future use and best overall value. Designer's Data for “Worst Case” Conditions — The Designer's Data Sheet permits the design of most circurts entirely from the information presented. Limit curves representing boundaries on device characteristics — are given to fecitate "worst ease” design MOTOROLA TMOS POWER MOSFET DATA 3-348
MOTOROLA SC (XSTRS/R F) BBE D MM 6367254 0098743 279 MOTE ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) OFF CHARACTERISTICS Drain-Source Breakdown Voltage VBR)DSS Vde (gg = 0, Ip = 0.25 mA) Zero Gate Voltage Drain Current pAde (Vps = Rated Voss, Vas = 0) (Vpg = Rated Vpss. Ves = 0, Ty = 125°C) Gate-Body Leakage Current, Forward (V@gr = 20 Vdc, Vpg = 0) [tcsse [| — | 100 | nade | Gate-Body Leakage Current, Reverse (V@gr = 20 Vdc, Vps = 0) [tcsse [| — | 100 | nade | ON CHARACTERISTICS* Gate Threshold Voltage Vesith) Vide (ps = Vgs. Ip = 1 mAl Ty = 100°C Static Drain-Source On-Resistance (Vgg = 10 Vdc, Ip = 6 Ade) Rpsion) | — | 012 | ohm | Drain-Source On-Voltage (V@g = 10 V) Vosion) Vde (ip = 12 Ade) lp = 6 Ade, Ty = 100°C) DYNAMIC CHARACTERISTICS Revere Trarfer Capachonce See Figue 1 a SWITCHING CHARACTERISTICS* (T) = 100°C) i Rgen = 50 ohms) Turn-OF Delay Time Seo figures, 13and1¢ — |_ taro | — [6 | eo] Total Gate Charge Vos = 08 Rated Voss, |__9a__|_ 13.) nc Gate-Source Charge Ip = Rated Ip, Veg = 10 V) Og5 SOURCE DRAIN DIODE CHARACTERISTICS* Forward Turn-On Time Ves = 0) ton Limited by stray inductance INTERNAL PACKAGE INDUGTANCE (T0-220) Internal Drain inductance la nH (Measured from the contact screw on tab to center of die) 3.5 (Typ) (Measured from the drain lead 0.25" from package to center of die) 45 (Typ) Internal Source Inductance ts 7.5 (Typ) (Measured from the source lead 0.25" from package to source bond pad.) Pulse Test Pulse Width 200 ys, Duty Cycle = 2% MOTOROLA TMOS POWER MOSFET DATA 3-349
Figure 1. On-Region Characteristics Figure 2. Gate-Threshold Voltage Variation
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Figure 3. Transfer Characteristics Figure 4. Breakdown Voltage Variation Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation
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Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching
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Figure 10. Thermal Response