MTP10N25 MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) bAE D MM 6367254 0098731 557 MEMOTL MOTOROLA m= SEMICONDUCTOR ee TECHNICAL DATA . 1 Designer's Data Sheet MTP10N25 Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate ‘MOS POWER FET . A . . q 10 AMPERES. This TMOS Power FET is designed for high voltage, high speed Rpsion) = 0.45 OHM Power switching applications such as switching regulators, con- ® 250 VOLTS verters, solenoid and relay drivers. TMOS ® Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C © Designer's Data — Ings, Vos(on): VGSith) and SOA Specified o at Elevated Temperature © Rugged — SOA is Power Dissipation Limited @ Source-to-Drain Diode Characterized for Use With Inductive Loads MAXIMUM RATINGS [ating OT Symbor [Value [Un] Gate-Source Voltage — Continuous Ves ‘£20 Vde \\% —Non-repetitive {tp < 50 us) | VGSM +40 Vpk Ip Drain Current — Continuous 4 f — Pulsed V Total Power Dissipation @ Tc = 25°C 100 Watts Derate above 25°C 08 wre CASE 2214-06 perating and Storage Temperature Range rye Tt to x0. ‘THERMAL CHARACTERISTICS Thermal Resistance Cw Junction to Case Rese Junction to Ambient ReJA Maximum Lead Temperature for Soldering TL °c Purposes, 1/8” from case for 5 seconds Designer's Data for “Worst Case” Conditions — The Designer's Data Sheet permits the design of most circuits entirely from the information presented. ‘SOA Limit curves — representing boundaries on device characteristics — are given to fecilitate “worst case” design. MOTOROLA TMOS POWER MOSFET DATA 3-337
MOTOROLA SC (XSTRS/R F) BBE D MM 6367254 0098732 493 MNOTE MTP10N25 ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) [earners TS Tin [ta [unit | OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGg = 0, Ip = 0.25 mAl Vieross | 250 | — | vac | Zero Gate Voltage Drain Current mAde (Vps = Rated Vpgg, Veg = 0) (Vps = 0.8 Rated Vpgs, Veg = 0. Ty = 125°C) Gate-Body Leakage Current, Forward (Vagr = 20 Vde, Vps = 0) [tesse | — | 100 | nA | Gate-Body Leakage Current, Reverse (Vggp = 20 Vdc. Vos = 0) [ tcssp | — | 100 | nda | ON CHARACTERISTICS* Gate Threshold Voltage V@sith) 45 Vde (Vps = Vos: Ip = 1 mA) 4 Ty = 100°C Static Drain-Source On-Resistance (Vgg = 10 Vdc, Ip = 5 Ade) [ Fosion’ | — | 045 | Ohm | Drain-Source On-Voltage (Vag = 10 V) Vpston) Vie (Ip = 10 Ade) (Ip = 5 Adc, Ty = 100°C) Forward Transconductance (vps = 15 V, Ip = 5A) [ors | 35 | — | mhos | DYNAMIC CHARACTERISTICS SWITCHING CHARAGTERISTICS® (Ty = 100°C) Turn-On Delay Time [tion [= [| Rada Penh r | = | a0 | see Agures, 13and14 | tavern =| | 100 a Ds = 0.8 Rated Voss, Gate-Source Charge Ip =Ratedip,Veg=10V) | Qge | 21ctyp) | — ‘| SOURCE DRAIN DIODE CHARACTERISTICS* oe paaem [=| ] INTERNAL PACKAGE INDUCTANCE (T0-220) Internal Drain Inductance lg (Measured from the contact screw on tab to center of die) 3.5 (Typ) (Measured from the drain lead 0.25" from package to center of die) 45 (Typ) Internal Source Inductance ts 7.5 (Typ) (Measured from the source lead 0.25" from package to source bond pad.) “Pulse Test. Pulse Width < 300 us, Duty Cycle < 2%. MOTOROLA TMOS POWER MOSFET DATA 3-338.
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Figure 1. On-Region Characteristics Figure 2. Gate-Threshold Voltage Variation Figure 3. Transfer Characteristics Figure 4. Breakdown Voltage Variation Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation
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Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching Figure 10. Thermal Response