MTP10N15 MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) 66E D MM 6367254 0098726 197 MMOTL MOTOROLA BE SEMICONDUCTOR SaaS TECHNICAL DATA A D Designer’s Data Sheet MTP10N15 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET . . . 10 AMPERES This TMOS Power FET is designed for medium voltage, high Rps{on) = 0.3 OHM speed power switching applications such as switching regulators, '® | 150 VOLTS converters, solenoid and relay drivers. Twos | ® Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C ® Designer's Data — Ipss, VpSion), VGs(th) and SOA Specified o at Elevated Temperature ® Rugged — SOA is Power Dissipation Limited ® Source-to-Drain Diode Characterized for Use With Inductive Loads G s MAXIMUM RATINGS Drain-Source Voltage Voss [180 «| Ve ‘| Drain-Gate Voltage VpGR 150 Vde . (Reg = 1 M0) \\ Gate-Source Voltage — Continuous Vos +20 Vde re / — Non-repetitive (tp = 50 us) | Vos +40 Vpk \\4 Drain Current Adc | Continuous Ip fi Pulsed lpm i] Total Power Dissipation @ Tc = 25°C ri) Watts UY, Derate above 25°C 06 wre g Operating and Storage Temperature Range To. Taig THERMAL CHARACTERISTICS CASE 2214-06 Thermal Resistance "Cw TO-220AB Junction to Case Rec 1.67 Junction to Ambient to20 | Rwa | 625 ‘| Maximum Lead Temperature for Soldering Th c Purposes, 1/8" from case for 5 seconds Designer's Data for “Worst Case” Conditions — The Designer's Data Sheet permits the design of most circuits entirely from the information presented, SOA Limit curves — representing boundaries on device characteristics ~ are given to facilitate "worst case” design MOTOROLA TMOS POWER MOSFET DATA 3-332
a MOTOROLA SC ¢XSTRS/R F) BaF D MM 6367254 009872? O2b MEMOTE MTP10N15 ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BRIDSS Vde (Weg = 0, Ip = 0.25 mA) MTPION15 Zero Gate Voltage Drain Current Adc (Vpg = Rated Vpgs. Ves = 0) {Vps = Rated Vpss, Ves = 0, Ty = 125°C) Gate-Body Leakage Current, Forward (VggF = 20 Vdc, Vpg = 0) | tcsse [| — | 100 | mAd | Gate-Body Leakage Current, Reverse (Vggr = 20 Vdc, Vpg = 0) [ tcsse [ — | 100 | maa | ON CHARACTERISTICS* Gate Threshold Voltage (Vpg = Ves. Ip = 1 mAb Vesith) Ve Ty = 100°C Static Drain-Source On-Resistance (Vgg = 10 Vdc, Ip = 5 Adc) [ Rosi | — | 03 [| Ohm | Drain-Source On-Voltage (Vgg = 10 V) Vpsion) Vie {lp = 10 Ade) ip = 5 Ade, Ty = 100°C) Forward Transconduetance (Vos = 15. Ip = 6) [ors [28 | = {hos | DYNAMIC CHARACTERISTICS Ds = 25V, Ves = 9, SWITCHING CHARACTERISTICS" (Ty = 100°C) TurmOn Delay Time [tao [ = [| Rise Time Re Sonne) ce ee TurecOHt Delay Time see igures 9, 13end 14 |_ tao | — | 200 | ee Gate-Source Charge Ip = Rated ip, Veg-10V) | Qgs | (typ) | — | Gate-Drain Charge See Figure 12 [Qa | vive | — | SOURCE DRAIN DIODE CHARACTERISTICS* Ig = Rated Ip INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance la (Measured from the contact screw on tab to center of die) 3.5 (Typ) (Measured from the drain lead 0.25" from package to center of die) 45 (Typ) Internal Source Inductance ls 7.5 (Typ) (Measured from the source lead 0.25" from package to source bond pad.) “Pulse Test Pulse Width < 300 ys, Duty Cycle = 2%. MOTOROLA TMOS POWER MOSFET DATA 3-333
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Figure 1. On-Region Characteristics Figure 2. Gate Threshold Voltage Variation
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Figure 3. Transfer Characteristics Figure 4. Breakdown Voltage Variation Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation
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Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching V(BR)DSS- The switching SOA shown in Figure 8 is appli- .
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Figure 10. Thermal Response