MTP10N10EL ONSEMI | Alldatasheet

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Technical content

Features

  • Avalanche Energy Specified
  • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Pb−Free Package is Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 100 Vdc Drain−to−Gate Voltage (RGS = 1.0 M) VDGR 100 Vdc Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 15 ± 20 Vdc Vpk Drain Current − Continuous @ TC = 25°C − Continuous @ TC = 100°C − Single Pulse (tp ≤ 10 s) ID ID IDM 6.0 Adc Apk Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C (Note 1) PD 40 0.32 1.75 Watts W/°C Watts Operating and Storage Temperature Range TJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 10 Adc, L = 1.0 mH, RG = 25 ) EAS mJ Thermal Resistance − Junction−to−Case° − Junction−to−Ambient − Junction−to−Ambient (Note 1) R JC R JA R JA 3.13 100 71.4 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 secs TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using the minimum recommended pad size.

10 A, 100 V

R DS(on) = 0.22 Preferred devices are recommended choices for future use and best overall value. Device Package Shipping

ORDERING INFORMATION

MTP10N10EL TO−220AB 50 Units/Rail TO−220AB CASE 221A STYLE 5 N−Channel D S G MARKING DIAGRAM & PIN ASSIGNMENT MTP10N10EL = Device Code LL = Location Code Y = Year WW = Work Week MTP10N10EL LLYWW Gate Source Drain Drain http://onsemi.com MTP10N10ELG TO−220AB (Pb−Free)

50 Units/Rail

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 100 115 Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 100 Vdc, VGS = 0 Vdc)° (VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 100 Adc Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS , ID = 250 Adc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 1.45 4.0 2.0 Vdc mV/°C Static Drain−to−Source On−Resistance (VGS = 5.0 Vdc, ID = 5.0 Adc) R DS(on) − 0.17 0.22 Ohm Drain−to−Source On−Voltage (VGS = 5.0 Vdc, ID = 10 Adc)° (VGS = 5.0 Vdc, ID = 5.0 Adc, TJ = 125°C) VDS(on) 1.85 2.6 2.3 Vdc Forward Transconductance (VDS = 8.0 Vdc, ID = 5.0 Adc) gFS 5.0 7.9 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0V d C iss − 741 1040 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f=10 MHz) C oss − 175 250 Reverse Transfer Capacitance f = 1.0 MH z) C rss − 18.9 40 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time td(on) − 11 20 ns Rise Time (VDD = 50 Vdc, ID = 10 Adc, tr − 74 150 Turn−Off Delay Time (VDD = 50 Vdc, ID = 10 Adc, VGS = 5.0 Vdc, Rg = 9.1 ) td(off) − 17 30 Fall Time GS g ) tf − 38 80 Gate Charge Q T − 9.3 15 nC (See Figure 8) (VDS = 80 Vdc, ID = 10 Adc, Q 1 − 2.56(VDS = 80 Vdc, ID = 10 Adc, VGS = 5.0 Vdc) Q 2 − 4.4 −GS ) Q 3 − 4.6 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 2) (IS = 10 Adc, VGS = 0 Vdc) (IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.98 0.898 1.6 Vdc Reverse Recovery Time trr − 124.7 − nse e se eco e y e (I 10 Adc V 0 Vdc ta − 86 − s (IS = 10 Adc, VGS = 0 Vdc, dIS/dt= 100 A/s) tb − 38.7 − Reverse Recovery Stored Charge dIS/dt = 100 A/s) Q RR − 0.539 − C INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) Ld − 4.5 − nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad.) Ls − 7.5 − 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. 3. Switching characteristics are independent of operating junction temperature.

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current Figure 5. On−Resistance Variation Figure 6. Drain−To−Source Leakage

5 VTJ = 25°C

be charged by current from the generator. and Q2 and VGSP are read from the gate charge curve. on−state when calculating td(off). is difficult to measure and, consequently, is not specified. maintain a value of unity regardless of the switching speed. however, snubbing reduces switching losses. Figure 7. Capacitance Variation

http://onsemi.com PACKAGE DIMENSIONS TO−220 THREE−LEAD TO−220AB CASE 221A−09 ISSUE AA STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE−T− C ST U R J

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