MTP10N10E MOTOROLA | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0068/C0101/C0115/C0105/C0103/C0110/C0101/C0114/C0039/C0115 /C0068/C0097/C0116/C0097 /C0083/C0104/C0101/C0101/C0116 /C0084/C0077/C0079/C0083 /C0073/C0086 /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement–Mode Silicon Gate This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain–to– source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients.

  • Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode — Unclamped Inductive Switching (UIS) Energy Capability Specified at 100°C
  • Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits
  • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ ) VDGR 100 Vdc Gate–Source Voltage VGS ± 20 Vdc Drain Current — Continuous Drain Current — Pulsed ID IDM Adc Total Power Dissipation Derate above 25°C PD 75 0.6 Watts W/°C Operating and Storage T emperature Range TJ, Tstg –65 to 150 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient° R θJC R θJA 1.67 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 275 °C Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics— are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Order this document by MTP10N10E/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0084/C0080/C0049/C0048/C0078/C0049/C0048/C0069 TMOS POWER FETs

10 AMPERES

100 VOLTS

R DS(on) = 0.25 OHM D S G CASE 221A–06, Style 5 TO–220AB  Motorola, Inc. 1996

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2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) V(BR)DSS 100 — Vdc Zero Gate Voltage Drain Current (VDS = Rated VDSS , VGS = 0) (VDS = 0.8 Rated VDSS , VGS = 0, TJ = 125°C) IDSS µA Gate–Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF — 100 nAdc Gate–Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR — 100 nAdc ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS , ID = 1.0 mA) TJ = 100°C VGS(th) 2.0 1.5 4.5 4.0 Vdc Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 5.0 Adc) R DS(on) — 0.25 Ohm Drain–Source On–Voltage (VGS = 10 V) (ID = 10 Adc)° (ID = 5.0 Adc, TJ = 100°C) VDS(on) 2.7 2.4 Vdc Forward Transconductance (VDS = 15 V, ID = 5.0 A) gFS 4.0 — mhos DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS Unclamped Drain–to–Source Avalanche Energy See Figures 14 and 15 (ID = 25 A, VDD = 25 V, TC = 25°C, Single Pulse, Non–repetitive) (ID = 10 A, VDD = 25 V, TC = 25°C, P.W. ≤ 200 µs, Duty Cycle ≤ 1%) (ID = 4.0 A, VDD = 25 V, TC = 100°C, P.W. ≤ 200 µs, Duty Cycle ≤ 1%) W DSR 100 mJ DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) See Figure 16 C iss — 600 pF Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) See Figure 16 C oss — 400 Reverse Transfer Capacitance See Figure 16 C rss — 100 SWITCHING CHARACTERISTICS* (TJ = 100°C) Turn–On Delay Time (VDD = 25 V, ID = 5.0 A, R G = 50 Ω ) See Figure 9 td(on) — 50 ns Rise Time (VDD = 25 V, ID = 5.0 A, R G = 50 Ω ) See Figure 9 tr — 80 Turn–Off Delay Time R G = 50 Ω ) See Figure 9 td(off) — 100 Fall Time tf — 80 Total Gate Charge (VDS = 0.8 Rated VDSS , ID = Rated ID , VGS = 10 V) See Figures 17 and 18 Q g 15 (Typ) 30 nC Gate–Source Charge (VDS = 0.8 Rated VDSS , ID = Rated ID , VGS = 10 V) See Figures 17 and 18 Q gs 8.0 (Typ) — Gate–Drain Charge See Figures 17 and 18 Q gd 7.0 (Typ) — SOURCE–DRAIN DIODE CHARACTERISTICS* Forward On–Voltage (IS = Rated ID VGS = 0) VSD 1.4 (Typ) 1.7 Vdc Forward Turn–On Time (IS = Rated ID VGS = 0) ton Limited by stray inductance Reverse Recovery Time VGS = 0) trr 70 (Typ) — ns INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die)″ (Measured from the drain lead 0.25″ from package to center of die) Ld 3.5 (Typ) 4.5 (Typ) nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) Ls 7.5 (Typ) — * Pulse Test: Pulse Width ≤/n636861720000000000000000300 µs, Duty Cycle ≤ 2.0%.

4 Motorola TMOS Power MOSFET Transistor Device Data

Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching when it is forward biased, or when it is on, or being turned on. and Its Use” provides detailed instructions. Figure 9. Resistive Switching Time Figure 10. Thermal Response

Figure 12. Commutating Safe Operating Area (CSOA) Figure 13. Commutating Safe Operating Area Figure 14. Unclamped Inductive Switching Figure 15. Unclamped Inductive Switching

2 L IO 2/C0467/C0466

source current so dIs/dt is specified with a maximum value. CSOA stress is maximized as IS decays from IRM to zero. a second order effect on CSOA. tained with dIs/dt of 400 A/µs. Figure 11. Commutating Waveforms

0.25 IRM

6 Motorola TMOS Power MOSFET Transistor Device Data

Figure 16. Capacitance Variation Figure 17. Gate Charge versus Figure 18. Gate Charge Test Circuit

10 V 100 k

/C0077/C0084/C0080/C0049/C0048/C0078/C0049/C0048/C0069 7Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS CASE 221A–06 ISSUE Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 1 2 3 D SEATING PLANE–T– C ST U R J

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8 Motorola TMOS Power MOSFET Transistor Device Data

How to reach us: USA / EUROPE : Motorola Literature Distribution; JAPAN : Nippon Motorola Ltd.; T atsumi–SPD–JLDC, T oshikatsu Otsuki, P .O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 T atsumi Koto–Ku, T okyo 135, Japan. 03–3521–8315 INTERNET : http://Design–NET .com 51 Ting Kok Road, T ai Po, N.T ., Hong Kong. 852–26629298 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MTP10N10E/D /C0042/C0077/C0084/C0080/C0049/C0048/C0078/C0049/C0048/C0069/C0047/C0068/C0042