IRF120-123 FAIRCHILD | Alldatasheet

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3469674 FAIRCHILD SEMICONDUCTOR 84D 27854 D

. [sR CY=P YW re , a IRF120-123/IRF520-523 7-37-11 | EXmenes MTP10N08/10N10 H A Schlumberger Company N-Channel Power MOSFETs, : i 11 A, 60-100 V j E Power And Discrate Division Description TO-2044A T0-220AB | These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC ay, motor controls, relay and solenoid drivers and other pulse ( ; circuits. Wy. © Low Rosion) / © Vas Rated at +20 V peas some 2 © Sllicon Gate for Fast Switching Speeds © Iss; Vosion» Specified at Elevated Temperature apie thee ¢ fiuaved IRF122 IRF522 | ow Drive Requirements aera ieee | © Ease of Paralleling (R28 os : MTP10N10 ‘ | Product Summary : i Ip at Ip at : i Part Number Rosom To= 25°C To= 100°C Case Style . Notes : For information conceming connection dlagram and package ouline, rete to Section 7 i EE 2.67 pT | “ta

. poo oe nner natnrnccnnnarnens wera cece, BY D) | 3469674 0027855 1 | —_ . . 3469674 FAIRCHILD SEMICONDUCTOR 84D 27855 D i ee IRF120-123/IRF520-523 MTP10N08/10N10 i | : .T-39-11 | 1 Maximum Ratings Rating IRF 120/122 Rating IRF520/522 Rating IRF122/123 Symbol MTP10N10 MTP10NO8 IRF522/523 Unit Voss [Bran Sowce Vote’ [wo [wow Vper Drain to Gate Voltage! Vv Ras = 20 k2 : ; Ty, Tstg | Operating Junction and -55 to +150 -55 to +150 55 to +150 °c : Storage Temperatures . Th Maximum Lead Temperature 275 275 275 °C for Soldering Purposes, 1/8" From Case for 5 8 Maximum Thermal Characteristics | iY IRF 120-123/1RF520-523 MTP 10N08/10 | Rasc | Thermal Resistance, 3.42 1.67 °C/W : Junction to Case \\ Raa | Thermal Resistance, 30/80 °C/W i Junction to Ambient H Po Total Powor Dissipation 75 w : at To = 25°C i Electrical Characteristics (Tc = 25°C unless otherwise noted) symbot | ___charactenetie ——|_min_ | max | unt | test conaons Off Characteristics Vierjoss | Drain Source Breakdown Voltage" v Vas =0 V, Ip = 260 uA 1RF120/122/520/522/ MTP10N10 IRF121/123/521/523, [| eo{ i loss Zero Gate Voltage Drain Current | | _—250_—~«|~—sWA__| Vos = Rated Voss, Vas=0 V vA | Vps=0.8x Rated Voss, Ves =0 V, To = 125°C lass Gate-Body Leakage Current nA | Vog=+20 V, Vps=0 V IRF120-123 +100 : IRF520-523/MTP10NO8/10 +500 t i el 2-68 po —

, oo - ay pe Bsveae74 onazasn 3 - 3469674 FAIRCHILD SEMICONDUCTOR 84D 27856 a . IRF120-123/IRF520-523 | MTP10N08/10N10 | J-39-11 : : : i Electrical Characteristics (Cont) (Tc = 25°C unless otherwise noted) | On Characteristics Vasin | Gate Threshold Voltage [ | |v IRF120-123/IRF520-523 | 20 | 40 | Ip = 250 yA, Vos = Ves MTP10NO8/10N10 [20 | 45 | Ip=1 mA, Vos = Ves ; Rosten) | Static Drain-Source On-Resistance fr | |e Vas = 10 V IRF120/121/520/621 [| 030 | l=40A MTP10NO8/10N10 [ —|__ oa | Ip=5.0A { IRF122/123/522/523 ee ee Ip=4.0 A i Vosten) | Drain-Source On-Voltage | | wo | v | Vas = 10 V; Ip= 10.0 A : MTP. 10N08/10N10 v . To = 100°C Dynamic Characteristics : ‘Switching Characteristics (Tc = 25°C, Figures 1, 2)° . ‘ | a a er A a a Voo = 50 V | | Source-Drain Diode Characteristics | Veo | Diode Forward Voltage Lf wl. | IRF120/121/520/521 v lg= 80 A; Vas =0 V IRF122/123/522/623 [| 28 | V_ | is=70A Vos=0V Notes Lty = 425% to +150 2. Pulse width tnt by Ty 2. Switching Ume measurements perormad on LEM TRC test equipment. EE 2-69

. 3469674 FAIRCHILD SEMICONDUCTOR gy pe Bsuesuz 0027858 2 r : . IRF120-123/IRF520-523 : MTP10NO8/10N10 +351, i 4 . ——.sasaa D>. Typical Performance Curves (Cont.) Figure 8 Gate to Source Voltage vs Figure 7 Capacitance vs Drain to Source Voltage Total Gate Charge ° =a * SoS See a ce 4 SS ve 2 a \\nnv4an i FEARS Sa 2'}—p je a = 2 FAH EE q It | Lid acelin WT i se-enucosoucevoy ee Tor eae cna i Figure 9 Forward Biased Safe Operating Area Figure 10 Transient Thermal Resistance vs Time for IRF120-123 And IRF520-523 for IRF120-123 And IRF520-523 : a ° eS SSS SSE j : aa Setaotier Setar peters ASerestocrmer eae emesis teense 7, FEE HEHE Tee eee i 5 SSMS sual ei asc £y lel NTT TT

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eee, inh == | | re HEN er wl TTT TT 10-1 dl I tit i | sco oso vor cue Figure 11 Forward Biased Safe ‘Operating Area Figure 12 Transient Thermal Resistance vs Time i for MTP10N08/10N10 for MTP10N08/10N10 Sere ear fare Seven Prrnnnier etn, EEE HEHE Y 1 [Restate oe ST i, FCCC : So aan See Sen 3 | i esos Fetal UL : Gace i soa Fe — ate tomo La i * FRB i Geel FEAT wrneey nit ast Lpself rls || ae wos TTT TTT wid SLL ee 2 Pes tae see-208 0 soe YURI nun a 271