MTNK8N3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • ESD protected gate , ≥2kV (HBM) • Easily designed drive circuits
  • High speed switching • Low-voltage drive
  • Pb-free lead plating and halogen-free package • Easy to use in parallel Symbol Outline MTNK8N3

Ordering Information

G G：Gate S：Source D：Drain G S S Device Package Shipping SOT-23 3000 pcs / tape & reel MTNK8N3-0-T1-G (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C055N3 Issued Date : 2017.03.28 Revised Date : Page No. : 2/9 MTNK8N3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDSS 30 Gate-Source V oltage VGSS ±20 V Continuous Drain Current @VGS=10V , TA=25°C 530 Continuous Drain Current @VGS=10V , TA=70°C ID 420 Pulsed Drain Current IDM 2100 *1 Continuous Source-Drain Diode Current IS 250 mA Total Power Dissipation PD 300 *2 mW ESD susceptibility VESD 2000 *3 V Operating Junction Temperature Range Tj -55~+150 Storage Temperature Range Tstg -55~+150 °C Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance, Junction to Ambient RθJA 416 *2 °C/W Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch *3. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS* 30 - - VGS=0V , ID=250μA VGS(th) 0.7 - 1.6 V VDS=VGS, ID=250μA IGSS - - ±10 VGS=±16V , VDS=0V - - 1 VDS=24V , VGS=0V IDSS - - 5 μA VDS=24V , VGS=0V , Tj=55°C - 0.392 0.7 ID=500mA, VGS=10V RDS(ON)* - 0.494 1 Ω ID=200mA, VGS=4.5V GFS 200 664 - mS VDS=10V, ID=500mA Dynamic Ciss - 29 44 Coss - 15 23 Crss - 4 6 pF VDS=25V , VGS=0V , f=1MHz *tr - 3.2 4.8 *td - 15.8 23.7 *tstg - 9.8 14.7 *tf - 13.8 20.7 ns VDS=15V , ID=0.5A, VGS=10V , RG=6Ω *Qg - 0.82 1.23 *Qgs - 0.35 0.525 *Qgd - 0.12 0.18 nC VDS=15V , ID=1A, VGS=10V

CYStech Electronics Corp. Spec. No. : C055N3 Issued Date : 2017.03.28 Revised Date : Page No. : 3/9 MTNK8N3 CYStek Product Specification Body Diode *VSD - 0.85 1.2 V IS=0.3A *trr - 5.1 - ns *Qrr - 1.3 - nC IF=1A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C055N3 Issued Date : 2017.03.28 Revised Date : Page No. : 4/9 MTNK8N3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 0123456789 1 0 VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10V,9V ,8V,7V,6V,5V,4V VGS=2V 2.5V Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Pulse width=300μs Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 200 300 400 500 600 700 800 900 1000 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=500mA RDS( ON)@Tj=25°C:392mΩ typ. VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=500mA ID=200mA VGS=4.5V, ID=200mA RDS(ON)@Tj=25°C :494mΩ typ.

CYStech Electronics Corp. Spec. No. : C055N3 Issued Date : 2017.03.28 Revised Date : Page No. : 5/9 MTNK8N3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=10V Gate Charge Characteristics 0 0.2 0.4 0.6 0.8 1 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=1A VDS=15V Maximum Safe Operating Area 0.001 0.01 0.1 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TA=25°C, Tj=150°C VGS=10V, RθJA=416°C/W Single Pulse DC 100m RDSON Limited 100μs 1ms 10ms Maximum Drain Current vs Junction Temperature 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)TA=25°C, VGS=10V, RθJA=416°C/W

CYStech Electronics Corp. Spec. No. : C055N3 Issued Date : 2017.03.28 Revised Date : Page No. : 6/9 MTNK8N3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 012345 V GS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=416°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=416°C/W

CYStech Electronics Corp. Spec. No. : C055N3 Issued Date : 2017.03.28 Revised Date : Page No. : 7/9 MTNK8N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C055N3 Issued Date : 2017.03.28 Revised Date : Page No. : 8/9 MTNK8N3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25 °C to peak temperature Note :1. All temperatures refer to topside of the package, measured on the package body surface. 2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools.

CYStech Electronics Corp. Spec. No. : C055N3 Issued Date : 2017.03.28 Revised Date : Page No. : 9/9 MTNK8N3 CYStek Product Specification SOT-23 Dimension Marking: Date Code Style : Pin 1.Gate 2.Source 3.Drain 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 XX *:Typical Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : Pure tin plated.
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.