MTNK5S3

MTNK5S3 CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : C800S3 Issued Date : 2010.07.19 Revised Date : 2013.09.09 Page No. : 1/8 MTNK5S3 CYStek Product Specification ESD protected N-Channel Enhancement Mode MOSFET MTNK5S3 BVDSS 30V ID 100mA RDSON(MAX) 8Ω

Description

• Low voltage drive(2.5V drive) makes this device ideal for portable equipment.
• High speed switching
• ESD protected device
• Pb-free lead plating & halogen-free package Symbol Outline

Ordering Information

(Pb-free lead plating & halogen-free package) 3000 pcs / Tape & Reel SOT-323 MTNK5S3 S G G：Gate S：Source D：Drain D S G

CYStech Electronics Corp. Spec. No. : C800S3 Issued Date : 2010.07.19 Revised Date : 2013.09.09 Page No. : 2/8 MTNK5S3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage BVDSS 30 V Gate-Source V oltage VGS ±20 V Continuous ID ±100 mA Drain Current Pulsed IDP ±200 *1 mA Continuous IDR ±100 mA Reverse Drain Current Pulsed IDRP ±200 *1 mA Total Power Dissipation PD 200 *2 mW ESD susceptibility 750 *3 V Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Thermal Resistance, Junction-to-Ambient Rth,ja 556 °C/W Note : *1. Pulse Width ≤ 10μs, Duty cycle ≤1% *2. With each pin mounted on the recommended lands. *3. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - V VGS=0, ID=100μA VGS(th) 0.8 1.3 1.5 V VDS=3V , ID=100μA IGSS - - ±1 μA VGS=±20V , VDS=0 IDSS - - 100 nA VDS=30V , VGS=0 - 3.4 8 VGS=4V , ID=10mA RDS(ON) - 6.9 13 Ω VGS=2.5V , ID=1mA GFS 20 50 - mS VDS=3V , ID=10mA Dynamic Ciss - 12.5 - Coss - 7.3 - Crss - 3.5 - pF VDS=5V , VGS=0, f=1MHz td(on) - 15 - tr - 35 - td(off) - 75 - tf - 75 - ns VDD≒5V , ID=10mA, VGS=5V , RL=500Ω, RG=10Ω Source-Drain Diode *VSD - 0.88 1.2 V VGS=0V , IS=100mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C800S3 Issued Date : 2010.07.19 Revised Date : 2013.09.09 Page No. : 3/8 MTNK5S3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0.05 0.1 0.15 0123 4 Gate Threshold Voltage vs Channel Temperature 0.5 1.5 -50 -25 0 25 50 75 100 125 150 Channel Temperature---Tch(°C) Gate Threshold Voltage---VGS(th)(V) 4V 3.5V 3V TA=25°C Drain-Source Voltage ---V DS(V) Drain Current --- I D(A) 2.5V VGS=1.5V Typical Transfer Characteristics 100 150 200 01234 Gate-Source Voltage---V GS(V) Drain Current ---I D(mA) VDS=3V 25°C 125°C 75°C Static Drain-Source On-state Resistance with Temperature -50 -25 0 25 50 75 100 125 150 Channel Temperature---Tch(°C) Static Drain-Source On-state Resistance(Ω) ID=50mA ID=100mA VGS=4V Static Drain-Source On-State resistance vs Drain Current 1 10 100 1000 Drain Current---I D(mA) Static Drain-Source On-State Resistance--- RDS(on)(Ω) VGS=2.5V VGS=4V TA=25°C Static Drain-Source On-State resistance vs Drain Current 1 10 100 1000 Drain Current---I D(mA) Static Drain-Source On-State Resistance--- RDS(on)(Ω) VGS=4V VGS=2.5V TA=125°C

CYStech Electronics Corp. Spec. No. : C800S3 Issued Date : 2010.07.19 Revised Date : 2013.09.09 Page No. : 4/8 MTNK5S3 CYStek Product Specification Typical Characteristics(Cont.) Static Drain-Source On-State Resistance vs Drain Current 100 1 10 100 1000 Drain Current---I D(mA) Static Drain-Source On-State Resistance- RDS(ON)(Ω) Ta=25°C Ta=125°C Ta=75°C VGS=2.5V Static Drain-Source On-State Resistance vs Drain Current 1 10 100 1000 Drain Current---ID(mA) Static Drain-Source On-State Resistance- RDS(ON)(Ω) Ta=25°C Ta=125°CTa=75°C VGS=4V Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 0 Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 Gate-Source Voltage---V GS(V) Static Drain-Source On-State Resistance---RDS(ON)(Ω) Gate-Source Voltage---V GS(V) Static Drain-Source On-State Resistance---RDS(ON)(Ω) ID=50mA TA=75°C TA=125°C TA=25°C TA=25°C ID=100mA TA=125°C TA=75°C Reverse Drain Current vs Source-Drain Voltage(I) 0.1 100 1000 00 .5 11 .5 Reverse Drain Current vs Source-Drain Voltage(II) 0.1 100 1000 00 .511 Source-Drain Voltage-V SD(V) Reverse Drain Current-I DR(mA) Source-Drain Voltage-V SD(V) Reverse Drain Current-I DR(mA) TA=25°C TA=75°C VGS=0V VGS=4V TA=125°C

CYStech Electronics Corp. Spec. No. : C800S3 Issued Date : 2010.07.19 Revised Date : 2013.09.09 Page No. : 5/8 MTNK5S3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 01 0 2 0 30 Foreward Transfer Admittance vs Drain Current 100 1000 1 10 100 1000 Drain Current---ID(mA) Forward Transfer Admittance--- YFS(mS) VDS=3V Ta=25°C Drain-Source Voltage---V DS(V) Capacitance---(pF) Ciss Ta=75°C Coss Ta=125°C Crss

CYStech Electronics Corp. Spec. No. : C800S3 Issued Date : 2010.07.19 Revised Date : 2013.09.09 Page No. : 6/8 MTNK5S3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C800S3 Issued Date : 2010.07.19 Revised Date : 2013.09.09 Page No. : 7/8 MTNK5S3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C800S3 Issued Date : 2010.07.19 Revised Date : 2013.09.09 Page No. : 8/8 MTNK5S3 CYStek Product Specification SOT-323 Dimension Marking: TEKN xx Device Code Date Code 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 Style: Pin 1.Gate 2.Source 3.Drain D 2.000 2.200 0.079 0.087 θ 0° 8° 0° 8° E 1.150 1.350 0.045 0.053 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.