MTN5N60J3 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

Features

  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • Pb-free lead plating package

Applications

  • Open Framed Power Supply
  • Adapter
  • STB Symbol Outline MTN5N60J3 TO-252(DPAK)

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel G：Gate D：Drain S：Source BVDSS : 600V RDS(ON) : 2.1Ω(typ.) ID : 5A G D S Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C408J3 Issued Date : 2010.03.09 Revised Date :2013.12.26 Page No. : 2/11 MTN5N60J3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 600 V Gate-Source V oltage VGS ±30 V Continuous Drain Current @ VGS=10V , TC=25°C ID 5* A Continuous Drain Current @ VGS=10V , TC=100°C ID 3* A Pulsed Drain Current @ VGS=10V (Note 1) IDM 20* A Single Pulse Avalanche Energy (Note 2) EAS 37.5 mJ Avalanche Current (Note 1) IAR 5 A Repetitive Avalanche Energy (Note 1) EAR 5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds TL 300 °C W Total Power Dissipation (TC=25℃) Linear Derating Factor Pd 50

0.4 W/°C

Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C *Drain current limited by maximum junction temperature Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=5A, VDD=50V, L=3mH, VG=10V, starting TJ=+25℃. 3. ISD≤5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃. Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.5 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 83 °C/W

CYStech Electronics Corp. Spec. No. : C408J3 Issued Date : 2010.03.09 Revised Date :2013.12.26 Page No. : 3/11 MTN5N60J3 CYStek Product Specification Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 600 - - V VGS=0, ID=250μA, Tj=25℃ ∆BVDSS/∆Tj - 0.6 - V/°C Reference to 25°C, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA *GFS - 3 - S VDS =15V , ID=2.5A IGSS - - ±100 nA VGS=±30 - - 1 μA VDS =600V , VGS =0 IDSS - - 10 μA VDS =480V , VGS =0, Tj=125°C *RDS(ON) - 2.1 2.5 Ω VGS =10V , ID=2.5A Dynamic *Qg - 13.9 - *Qgs - 2.4 - *Qgd - 5.8 - nC ID=5A, VDD=480V , VGS=10V *td(ON) - 16 - *tr - 45 - *td(OFF) - 36 - *tf - 30 - ns VDD=300V , ID=5A, VGS=10V , RG=25Ω, RD=60Ω Ciss - 700 - Coss - 86 - Crss - 20 - pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode *VSD - - 1.5 V IS=5A, VGS=0V *IS - - 5 *ISM - - 20 A *trr - 300 - ns VGS=0, IF=5A, dI/dt=100A/μs *Qrr - 3 - μC *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint

CYStech Electronics Corp. Spec. No. : C408J3 Issued Date : 2010.03.09 Revised Date :2013.12.26 Page No. : 4/11 MTN5N60J3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 02 03 04 05 06 0 Drain-Source Voltage -V DS(V) Drain Current - I D(A) VGS=4.5V 15V 10V 5.5V Static Drain-Source On-resistance vs Ambient Temperature 0.5 1.5 2.5 3.5 4.5 -100 -50 0 50 100 150 Ambient Temperature-Ta(°C) Static Drain-Source On-state Resistance-R DS(on)(Ω) ID=2.5A, VGS=10V Static Drain-Source On-State resistance vs Drain Current 1.5 2.5 3.5 0.1 1 10 Drain Current-I D(A) Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=10V Drain Current vs Gate-Source Voltage 0 5 10 15 20 Gate-Source Voltage-VGS(V) Drain Current-I D(on)(A) Ta=25°C VDS=10V VDS=30V Static Drain-Source On-State Resistance vs Gate-Source Voltage 468 1 0 1 2 Body Diode Forward Voltage Variation vs Source Current and Temperature 0.1 100 Source Drain Voltage -VSD(V) Reverse Drain Current-I DR(A) VGS=0V Ta=25°C Ta=150°C Gate-Source Voltage-VGS(V) Static Drain-Source On-State Resistance-RDS(ON)(Ω) Ta=25°C ID=2.5A

CYStech Electronics Corp. Spec. No. : C408J3 Issued Date : 2010.03.09 Revised Date :2013.12.26 Page No. : 5/11 MTN5N60J3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Reverse Voltage 100 1000 10000 0 5 10 15 20 25 30 Drain-to-Source Voltage-V DS(V) Capacitance-(pF) Ciss Coss Crss f=1MHz Brekdown Voltage vs Ambient Temperature 600 650 700 750 800 -100 -50 0 50 100 150 200 Ambient Temperature-Tj(°C) Drain-Source Breakdown Voltage BVDSS(V) ID=250μA, VGS=0V Maximum Safe Operating Area 0.01 0.1 100 1 10 100 1000 Drain-Source Voltage -VDS(V) Drain Current --- ID(A) Operation in this area is limited by RDS(ON) DC 10ms 100ms 1ms 100μs 10μs Single pulse Tc=25°C; Tj=150°C, V GS=10V Gate Charge Characteristics 0 5 10 15 Total Gate Charge---Qg(nC) Gate-Source Voltage---VGS(V) ID=5A VDS=120V VDS=300V VDS=480V Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 Case Temperature---T C(°C) Maximum Drain Current---I D (A)

CYStech Electronics Corp. Spec. No. : C408J3 Issued Date : 2010.03.09 Revised Date :2013.12.26 Page No. : 6/11 MTN5N60J3 CYStek Product Specification Typical Characteristics(Cont.) Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) ZθJC(t), Thermal Response Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.ZθJC(t)=2.5°C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t)

CYStech Electronics Corp. Spec. No. : C408J3 Issued Date : 2010.03.09 Revised Date :2013.12.26 Page No. : 7/11 MTN5N60J3 CYStek Product Specification Test Circuit and Waveforms

CYStech Electronics Corp. Spec. No. : C408J3 Issued Date : 2010.03.09 Revised Date :2013.12.26 Page No. : 8/11 MTN5N60J3 CYStek Product Specification Test Circuit and Waveforms(Cont.)

CYStech Electronics Corp. Spec. No. : C408J3 Issued Date : 2010.03.09 Revised Date :2013.12.26 Page No. : 9/11 MTN5N60J3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C408J3 Issued Date : 2010.03.09 Revised Date :2013.12.26 Page No. : 10/11 MTN5N60J3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C408J3 Issued Date : 2010.03.09 Revised Date :2013.12.26 Page No. : 11/11 MTN5N60J3 CYStek Product Specification TO-252 Dimension Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. Marking: Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Device Name Date Code CYS 5N60 □□□□ 1 2 3 DIM Min. Max. Min. Max. Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead : Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.