MTN5003T DGNJDZ | Alldatasheet
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Technical content
P arameter Symbol Value Unit 1.3 1.7 M TN5003T So urce Gate Protection Diode Gate Drain ESD p rotection for high speed data lines to IEC61000-4-2 ESD contact discharge typical 8KV, max 15KV ESD air discharge typical 15KV, max 25KV THERMAL CHARACTERISTICS APPLICATION MARKING: 53 SOT523 S OT-523 Plastic-Encapsulate MOSFETS DONGGUAN NANJING ELECTRONICS LTD., D ongguan Nanjing Electronics Ltd. 1/5 www.dgnjdz.com All data s heet.com
3.00 P arameter Symbol Test Condition Min Typ Max Units O ff characteristics O n characteristics D ynamic characteristics (note 2) S witching characteristics D rain-source body diode characteristics Notes: 1.30 1.70 0.4 1.0 5.00 0.1 D ongguan Nanjing Electronics Ltd. 2/5 www.dgnjdz.com All data s heet.com
0.01 0.1 0.5 1.0 1.5 2.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 5 50 75 100 125 0.0 0.5 1.0 1.5 2.0 P ulsed P ulsed Ta= 100 IS —— VS D Ta= S OURCE CURRENT I S (A) S OURCE TO DRAIN VOLTAGE VS D (V) VG 10V VG VG VG VG 3V,4V,5V,6V O utput Characteristics VG 1 2 3 4 5 D RAIN CURRENT ID (A) D RAIN TO SOURCE VOLTAGE VD S (V) VG 4.5V Ta= P ulsed VG 10V Ta= P ulsed O N-RESISTANCE R D S(ON) ( ) D RAIN CURRENT ID (A) RD S(ON) — — ID Ta= 100 Ta= O N-RESISTANCE R ( ) G ATE TO SOURCE VOLTAGE VG S (V) RD S(ON) — — VG S ID= 500mA VD Pulsed D RAIN CURRENT ID (A) 1 2 3 4 5 G ATE TO SOURCE VOLTAGE VG S (V) T ransfer Characteristics Ta= 100 Ta= ID= 250uA T hreshold Voltage T HRESHOLD VOLTAGE V T H D S(ON) (V) J UNCTION TEMPERATURE Tj ( ) D ongguan Nanjing Electronics Ltd. 3/5 www.dgnjdz.com All data s heet.com
D ongguan Nanjing Electronics Ltd. 4/5 www.dgnjdz.com All data s heet.com
D ongguan Nanjing Electronics Ltd. 5/5 www.dgnjdz.com All data s heet.com