MTN2306N3 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Lower gate charge
  • Pb-free lead plating and Halogen-free package Equivalent Circuit Outline Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS 30 V Gate-Source V oltage VGS ±20 V TA=25°C, VGS=10V 4.8 Continuous Drain Current TA=70°C, VGS=10V ID 3.8 A Pulsed Drain Current IDM 20 (Note 1 & 2) A TA=25°C 1.38 (Note 3) Power Dissipation TA=70°C PD 0.88 (Note 3) W Thermal Resistance, Junction to Ambient Rth, j-a 90 (Note 3) °C/W Operating Junction and Storage Temperature Tj, Tstg -55 ~ +150 °C Note : 1. Pulse width limited by maximum junction temperature. 2. Duty cycle ≤ 1%. 3. Surface mounted on 1 in² copper pad of FR4 board, t≤10s; 270°C/W when mounted on min. copper pad. MTN2306N3 SOT-23 D G S G：Gate S：Source D：Drain

CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2012.04.12 Revised Date : Page No. : 2/8 MTB2306N3 CYStek Product Specification Electrical Characteristics (TA=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - V VGS=0, ID=250μA VGS(th) 1 1.8 3 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V , VDS=0 - - 1 VDS=24V , VGS=0 IDSS - - 10 μA VDS=20V , VGS=0, Tj=125°C - 35 60 ID=3.5A, VGS=10V *RDS(ON) - 58 90 mΩ ID=2A, VGS=4.5V *GFS - 5 - S VDS=5V , ID=3.5A Dynamic Ciss - 384 - Coss - 46 - Crss - 34 - pF VDS=10V , VGS=0, f=1MHz *td(ON) - 4 - *tr - 3.7 - *td(OFF) - 8 - *tf - 3.5 - ns VDS=10V , ID=1A,VGS=10V , RG=6Ω *Qg - 6 - *Qgs - 1.5 - *Qgd - 1.7 - nC VDS=10V , ID=4.8A, VGS=4.5V Source-Drain Diode IS - - 2 ISM - - 8 A VSD - 0.85 1.2 V IF=IS, VGS=0V Pulse test : Pulse width≤300μs, Duty cycle≤2% Independent of operating temperature Pulse width limited by maximum junction temperature

Ordering Information

Device Package Shipping Marking MTN2306N3 SOT-23 (Pb-free) 3000 pcs / Tape & Reel 2306

CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2012.04.12 Revised Date : Page No. : 3/8 MTB2306N3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 01234 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 6V,7V,8V,9V,10V VGS=3V VGS=4V VGS=5V Brekdown Voltage vs Ambient Temperature -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Drain-Source Breakdown Voltage BVDSS(V) ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=3V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 100 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=10V, ID=3.5A VGS=4.5V, ID=2A VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=3.5A ID=2A

CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2012.04.12 Revised Date : Page No. : 4/8 MTB2306N3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 1.2 1.4 1.6 1.8 2.2 2.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) VGS(th), Threshold Voltage-(V) ID=250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=10V VDS=5V Gate Charge Characteristics 01234567 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=4.8A VDS=15V VDS=10V VDS=5V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C,VGS=10V RθJA=90°C/W, Single Pulse Maximum Drain Current vs JunctionTemperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=10V

CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2012.04.12 Revised Date : Page No. : 5/8 MTB2306N3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 02468 1 0 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Power Derating Curve 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 50 100 150 200 TA, Ambient Temperature(℃) PD, Power Dissipation(W) Mounted on FR-4 board with 1 in² pad area Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=270°C/W

CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2012.04.12 Revised Date : Page No. : 6/8 MTB2306N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2012.04.12 Revised Date : Page No. : 7/8 MTB2306N3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2012.04.12 Revised Date : Page No. : 8/8 MTB2306N3 CYStek Product Specification SOT-23 Dimension Style: Pin 1.Gate 2.Source 3.Drain 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 H JKD A L GV C B S Marking: 2306 *: Typical H 0.0000 0.0040 0.00 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.