MTN2002ZS3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C447S3 Issued Date : 2009.04.29 Revised Date : 2009.06.03 Page No. : 1/6 MTN2002ZS3 CYStek Product Specification ESD protected N-CHANNEL MOSFET MTN2002ZS3

Description

  • Low voltage drive, 1.8V
  • Easy to use in parallel
  • High speed switching
  • ESD protected device
  • Pb-free package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage BVDSS 20 V Gate-Source V oltage VGS ±8 V Continuous Drain Current ID 100 mA Pulsed Drain Current (Ta=25°C) IDM 400 *1 mA Total Power Dissipation (Ta=25°C) 200 Total Power Dissipation (Tc=25°C) PD 400 mW ESD susceptibility 350 *2 V Operating Junction and Storage Temperature Range Tj -55~+150 °C Thermal Resistance, Junction-to-Ambient Rth,ja 625 °C/W Thermal Resistance, Junction-to-Case Rth,jc 250 °C/W Lead Temperature, for 10 second Soldering TL 260 °C Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. Human body model, 1.5kΩ in series with 100pF SOT-323 MTN2002ZS3 D G S G：Gate S：Source D：Drain BVDSS 20V ID 100mA RDSON 3Ω

CYStech Electronics Corp. Spec. No. : C447S3 Issued Date : 2009.04.29 Revised Date : 2009.06.03 Page No. : 2/6 MTN2002ZS3 CYStek Product Specification Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 20 - - V VGS=0, ID=100μA VGS(th) 0.5 - 1.0 V VDS=VGS, ID=250μA IGSS - - ±1 μA VGS=±8V , VDS=0 IDSS - - 500 nA VDS=20V , VGS=0 - 1.7 3 VGS=4.5V , ID=100mA RDS(ON) - 3.5 6 Ω VGS=1.8V , ID=20mA GFS 100 - - mS VDS=5V , ID=100mA Dynamic Ciss - - 50 Coss - - 25 Crss - - 5 pF VDS=10V , VGS=0, f=1MHz Source-Drain Diode *VSD - - 1 V VGS=0V , IS=10mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTN2002ZS3 SOT-323 (Pb-free) 3000 pcs / Tape & Reel 22 Characteristic Curves Typical Output Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 01234 Drain-Source Voltage -VDS(V) Drain Current - ID(A) VGS=1.5V 3.5V 4.5V 1.8V 2.0V 2.5V 4.0V Typical Transfer Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0123456 Gate-Source Voltage-VGS(V) Drain Current -ID(A) VDS=3V

CYStech Electronics Corp. Spec. No. : C447S3 Issued Date : 2009.04.29 Revised Date : 2009.06.03 Page No. : 3/6 MTN2002ZS3 CYStek Product Specification Characteristic Curves(Cont.) Static Drain-Source On-State resistance vs Drain Current 0.001 0.01 0.1 1 Drain Current-ID(A) Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=1.8V VGS=4.5V Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 Gate-Source Voltage-VGS(V) Static Drain-Source On-State Resistance-RDS(ON)(Ω) ID=100mA ID=20mA Reverse Drain Current vs Source-Drain Voltage 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 00 . 1 0 . 2 0 . 3 0 . 4 Capacitance vs Drain-to-Source Voltage 100 0.1 1 10 100 Drain-Source Voltage -VDS(V) Capacitance---(pF) Reverse Drain Current -IDR(A) Source-Drain Voltage-VSD(V) Ciss Coss Crss Power Derating Curve 100 150 200 250 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(mW) Power Derating Curve 100 150 200 250 300 350 400 450 0 50 100 150 200 Case Temperature---TC(℃) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C447S3 Issued Date : 2009.04.29 Revised Date : 2009.06.03 Page No. : 4/6 MTN2002ZS3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C447S3 Issued Date : 2009.04.29 Revised Date : 2009.06.03 Page No. : 5/6 MTN2002ZS3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C447S3 Issued Date : 2009.04.29 Revised Date : 2009.06.03 Page No. : 6/6 MTN2002ZS3 CYStek Product Specification SOT-323 Dimension Marking: TE22 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 Style: Pin 1.Gate 2.Source 3.Drain He E A Q Lp e bp D W B v A Z detail Z A C θ 01 2 scale mm Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; pure tin plated
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.