MTN002N05Y3 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Simple drive requirement
  • Small package outline
  • Pb-free package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 50 Gate-Source V oltage VGS ±20 V Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) 250 Continuous Drain Current @ TA=85°C, VGS=4.5V (Note 3) ID 180 mA Pulsed Drain Current (Notes 1, 2) IDM 1 A TA=25℃ 150 Maximum Power Dissipation (Note 3) TA=85℃ PD mW ESD susceptibility 1500 (Note 4) V Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3.Surface mounted on FR-4 board. 4. Human body model, 1.5kΩ in series with 100pF. MTN002N05Y3 SOT-723 BVDSS 50V ID 250mA RDSON@VGS=4.5V , ID=220mA 1.2Ω(typ) RDSON@VGS=2.5V ,ID=220mA 1.7Ω(typ) RDSON@VGS=1.8V ,ID=100mA 3.6Ω(typ) D G：Gate S：Source D：Drain SG

CYStech Electronics Corp. Spec. No. : C834Y3 Issued Date : 2012.06.25 Revised Date : Page No. : 2/8 MTN002N05Y3 CYStek Product Specification Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient(PCB mounted) Rth,ja 833 °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 50 - - V VGS=0, ID=250μA VGS(th) 0.5 1.1 1.5 V VDS=10V , ID=1mA IGSS - - ±10 VGS=±20V , VDS=0 - - 1 VDS=50V , VGS=0 IDSS - - 10 μA VDS=40V , VGS=0 (Tj=70°C) - 1.2 1.6 VGS=4.5V , ID=220mA - 1.7 2.2 VGS=2.5V , ID=220mA *RDS(ON) - 3.6 5 Ω VGS=1.8V , ID=100mA *GFS 0.4 0.6 - S VDS=10V , ID=220mA Dynamic Ciss - 43 - Coss - 7.2 - Crss - 4 - pF VDS=10V , VGS=0, f=1MHz td(ON) - 4 - tr - 7 - td(OFF) - 15 - tf - 15 - ns VDS=30V , ID=100mA, VGS=4.5V RG=10Ω Qg - 0.76 - Qgs - 0.085 - Qgd - 0.26 - nC VDS=30V , ID=250mA, VGS=4.5V Source-Drain Diode *VSD - 0.79 1.2 V VGS=0V , IS=200mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTN002N05Y3 SOT-723 (Pb-free package) 8000 pcs / Tape & Reel RH

CYStech Electronics Corp. Spec. No. : C834Y3 Issued Date : 2012.06.25 Revised Date : Page No. : 3/8 MTN002N05Y3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0.0 0.5 1.0 1.5 2.0 012345 VDS, Drain-Source Voltage(V) ID, Drain Current (A) VGS=3V VGS=1.8V VGS=2.5V VGS=10V VGS=5V VGS=4.5V VGS=4V VGS=3.5V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0.5 1.5 2.5 3.5 4.5 0.001 0.01 0.1 1 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(Ω) VGS=4.5VVGS=2.5VVGS=1.8V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 IDR, Reverse Drain Current (A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0.5 1.5 2.5 3.5 4.5 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=4.5V, ID=220mA VGS=1.8V, ID=100mA VGS=2.5V, ID=220mA VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(Ω) ID=220mA ID=100mA

CYStech Electronics Corp. Spec. No. : C834Y3 Issued Date : 2012.06.25 Revised Date : Page No. : 4/8 MTN002N05Y3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=833°C/W Gate Charge Characteristics 00 . 511 . 5 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=30V ID=250mA Maximum Safe Operating Area 0.001 0.01 0.1 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current (A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C, VGS=4.5V, RθJA=833°C/W Single Pulse Maximum Drain Current vs JunctionTemperature 0.05 0.1 0.15 0.2 0.25 0.3 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)TA=25°C, VGS=4.5V, RθJA=833°C/W

CYStech Electronics Corp. Spec. No. : C834Y3 Issued Date : 2012.06.25 Revised Date : Page No. : 5/8 MTN002N05Y3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 02468 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Power Derating Curve 0.05 0.1 0.15 0.2 0 20 40 60 80 100 120 140 160 TA, Ambient Temperature(℃) PD, Power Dissipation(W) Mounted on FR-4 board Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=5V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) Normalized Transient Thermal ResistanceSingle Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=833°C/W

CYStech Electronics Corp. Spec. No. : C834Y3 Issued Date : 2012.06.25 Revised Date : Page No. : 6/8 MTN002N05Y3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C834Y3 Issued Date : 2012.06.25 Revised Date : Page No. : 7/8 MTN002N05Y3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C834Y3 Issued Date : 2012.06.25 Revised Date : Page No. : 8/8 MTN002N05Y3 CYStek Product Specification SOT-723 Dimension Marking: RH Style: Pin 1.Gate 2.Source 3.Drain 3-Lead SOT-723 Plastic Surface Mounted Package CYStek Package Code: Y3 *Typical c 0.000 0.150 0.000 0.006 θ 7° REF 7° REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.