MTM2N50 MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) BBE D MM 6367254 009854? OS2 MEMOTL MOTOROLA m@ SEMICONDUCTOR Sox TECHNICAL DATA _ . p Designer's Data Sheet MTM2N50 Power Field Effect Transistor N-Channel Enhancement-Mode — Silicon Gate — TMOS POWER FET This TMOS Power FET is designed for high voltage, high speed Ro PERS ns power switching applications such as switching regulators, con- Psion) vouts verters, solenoid and relay drivers. ® © Silicon Gate for Fast Switching Speeds — Switching Times i.TMos | Specified at 100°C i © Designer's Data — Ings. Vos(on). VGSith) and SOA Specified | D at Elevated Temperature © Rugged — SOA is Power Dissipation Limited © Source-to-Drain Diode Characterized for Use With Inductive Loads MAXIMUM RATINGS G [Rating Svmbot_ [Value [unit Drain-Source Voltage voss [500 | vac _| s Drain-Gate Voltage VpcR Vde (Reg = 1M) ~ Gate-Source Voltage — Continuous Ves +20 Vde — Non-repetitive (tp < 50 us) | _VGSM +40 Vpk Drain Current Adc Continuous 2 X Pulsed 7 \\ or )) Total Power Dissipation @ Tc = 25°C Pp 18 Watts ——) Derate above 25°C 06 wee TyTotg | =65 0 150 THERMAL CHARACTERISTICS Thermal Resistance “CW CASE 1-07 Junction to Case Rec 1.67 TO-204AA Junction te Ambient RA 30 Maximum Lead Temperature for Soldering Tt °C Purposes, 1/8" from case for 5 seconds Designer's Data for “Worst Case" Conditions — The Designer's Data Sheet permits the design of most circuits entirely from the information presented Limit ES MOTOROLA TMOS POWER MOSFET DATA 3-153
MOTOROLA SC (XSTRS/R F) BBE D MM 6367254 0098546 199 MMOTL ELECTRICAL CHARACTERISTICS (Tc = 25°C uniess otherwise noted) OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS Vde (Vgs = 0, Ip = 0.25 mA) MTP2N45 450 MTM/MTP2N5O 500 Zero Gate Voltage Drain Current mAde (Vps = Rated Vpgs, Vgs = 0) (Vps = 0.8 Rated Voss, Vas = 0, Ty = 125°C) Gate-Body Leakage Current, Forward (VGgF = 20 Vdc, Vps = 0) Iesse_ | — | 100 | nade | Gate-Body Leakage Current, Reverse (Vagr = 20 Vdc, Vpg = 0) tgsse_| — | 100 | nade | ON CHARACTERISTICS* _ _ Gate Threshold Voltage (Vps = Vgs. Ip = 1 mA) Vesith) 2 Vde Ty = 100°C 8 Static Drain-Source On-Resistance (Vgg = 10 Vde, Ip = 1 Adc) RDS(on) = Drain-Source On-Voltage (Vgg = 10 V) Vpston) Vde {Ip = 2 Adc) lip = 1 Adc, Ts = 100°C) Forward Transconductance (Vpg = 15 V, Ip = 1A) [ors [| 1 | — | mhos | DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance See Figure 11 [ Ces [| — | 50 | SWITCHING CHARACTERISTICS# (Ty = 100°C) TurmOn Delay Time [tion | = [| Rise Time (Vpp = 25 V, Ip = 0.5 Rated Ip Re eons « | = [| o | Turn-Off Delay Time See figures 9, 13and14 | taro) | = ~—*| i «f= [| Gate-Source Charge Ip = Rated Ip, Ves- 10V) | Qgs | 9(Tvp) | SOURCE DRAIN DIODE CHARACTERISTICS* INTERNAL PACKAGE INDUCTANCE (TO-204) Internal Drain Inductance la 5 (Typ) = (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance Ls 12.5 (Typ) (Measured from the source pin, 0.25" from the package to the source bond pad) *Pulse Test: Pulse Width = 300 us, Duty Cycle = 2% MOTOROLA TMOS POWER MOSFET DATA 3-154
Figure 1. On-Region Characteristics Figure 2. Gate-Threshold Voltage Variation Figure 3. Transfer Characteristics Figure 4. Breakdown Voltage Variation
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Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation
Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching
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Figure 10. Thermal Response