MTM25N10

MTM25N10 MOTOROLA | Alldatasheet

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MOTOROLA SC (XSTRS/R F) bAE D MM 6367254 0098603 701 MMOTL MOTOROLA m@ SEMICONDUCTOR SEE TECHNICAL DATA F 1, Designer’s Data Sheet MTM25N10 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET This TMOS Power FET is designed for high speed power R on 0.075 OHM switching applications such as switching regulators, converters, Delon OUTS solenoid and relay drivers. / ® Silicon Gate for Fast Switching Speeds — Switching Times ® Specified at 100°C TMOS © Designer's Data — Ipss. VpSion). VGSith) and SOA Specified D. at Elevated Temperature © Rugged — SOA is Power Dissipation Limited © Source-to-Drain Diode Characterized for Use With Inductive Loads G MAXIMUM RATINGS [ating TT Symbor [Vetus [Unt | $ [ Drain-Source Voltas | Moss | 0c | Drain-Gate Voltage (RGs = 1 MQ) [ voor [wo vac | Gate-Source Voltage Continuous Vos +20 Vde Non-repetitive (tp < 50 ys) VGsM +40 Vpk Drain Current — Continuous 2 S, — Pulsed 105 Total Power Dissipation @ Tc = 25°C Watts SS. Derate above 25°C wre | ° Operating and Storage Temperature Range | Ty,Tag | -esto1o |e | THERMAL CHARACTERISTICS ‘Thermal Resistance — Junction to Case Rec 0.83 “CW CASE 197A-03 — Junction to Ambient Resa 30 TO-204AE Maximum Lead Temperature for Soldering TT °C Purposes, 1/8” from case for 5 seconds ELECTRICAL CHARACTERISTICS — (Tc = 25°C unless otherwise noted) Characteristic [ svmbot_ [min [Mex [unit] OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS. Vde {Vgs = 0, Ip = 0.25 mA} Zero Gate Voltage Drain Current wAdc {Vps = Rated Vpss, Vas = 0) \\Vps = Rated Voss, Ves = 0, Ty = 125°C) Gate-Body Leakage Current, Forward nAdc (VGsF = 20 Vdc, Vpg = 0) Gate-Body Leakage Current, Reverse nAdc (Vgsr = 20 Vdc, Vps = 0) (continued) Designers Data for “Worst Cass” Conditions — The Designer's Data Sheet permits the design of most circus ently from the information presented Lint MOTOROLA TMOS POWER MOSFET DATA 3-209

MOTOROLA SC (XSTRS/R F) BBE D MM 6367254 0098604 648 MENOTL ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted) Characteristic symbol | Min | Max [unit] ON CHARACTERISTICS* Gate Threshold Voltage Vasith) | vae | ps = Vos. 1p = 1 mA) 2 45 | Ty = 100°C 15 4 | Static Drain-Source On-Resistance (Vg = 10 Vdc, Ip = 12.5 Adc) Rpsion) Ohm Drain-Source On-Voltage (VGg = 10 V) Vpsion) Vae (Ip = 25 Adc) 2.25 {Ip = 12.5 Ade, Ty = 100°C) 18 Forward Transconductance (Vpg = 10 V, Ip = 12.5) OFS =| mhos | DYNAMIC CHARACTERISTICS Input Capacitance (Vos = 25, Ves = 0, Ciss = 72000 pF Output Capacitance f = 1 MHz) 1500 Reverse Transfer Capacitance See Figure 11 400 SWITCHING CHARACTERISTICS* (Ty ~ 100°C) Turn-On Delay Time [tao | — | © | ns Rise Time (Vpp = 25 V, Ip = 0.5 Rated Ip = _ [40 ‘| ~ R = 50 ohms) igen | Turn-Off Delay Time See Figures 8, 13 and 14 j= {0 | | roar 7 | Total Gate Charge (Vos = 08 Rated Voss, Qy zo(typ) | 40 ‘| Gate-Source Charge Ip = Rated Ip, Veg = 10) Qgs Gate-Drain Charge See Figure 12 6 (Typ) ‘SOURCE DRAIN DIODE CHARACTERISTICS* Forward Onvonage ers Yeo i Forward Turn-On Time Ves = 0 ton Limited by stray inductance INTERNAL PACKAGE INDUCTANCE (TO-204) Internal Drain Inductance la 5 (Typ) (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance Ls 12.5 (Typ) (Measured from the source pin, 0.25” from the package to the source bond pad) MOTOROLA TMOS POWER MOSFET DATA 3-210

2 See ee EE EE PT

Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching

1 TIME (ms)

Figure 10. Thermal Response