MTM20P10 MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) bBE D MM 6367254 0098598 S14 MMOTL MOTOROLA m@ SEMICONDUCTOR Se TECHNICAL DATA : , Designer's Data Sheet MTM20P10 Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate MOS POWER FET : 20 AMPERES: This TMOS Power FET is designed for medium voltage, high Rps(on) = 0.15 OHM speed power switching applications such as switching regulators, i 100 VOLTS converters, solenoid and relay drivers. | © Silicon Gate for Fast Switching Speeds — Switching Times ® a Specified at 100°C |_twas D © Designer's Data — Ipgs, VoS(on). VGS{th) and SOA Specified at Elevated Temperature @ Rugged — SOA is Power Dissipation Limited Source-to-Drain Diode Characterized for Use With inductive Loads MAXIMUM RATINGS s | BrainSourceVotage | Voss | ton | va Drain-Gate Voltage VpGR Vde (Rgs = 1 M0) Gate-Source Voltage Continuous | Ves +20 Vde \\ + Non-repetitive {tp < 50 ys) VGsm +40 Vpk ZA Drain Current Adc Continuous 20 Pulsed 80 Total Power Dissipation @ Tc = 25°C 125 Watts, Derate above 25°C 1 wre (CASE 1-07 TO-204AA ‘THERMAL CHARACTERISTICS Thermal Resistance =Cw Junction to Case Rac Junction to Ambient Resa Maximum Lead Temperature for Soldering TL °c Purposes, 1/8” from case for 5 seconds Designer's Data for “Worst Case” Conditions — The Designer's Data Sheet permits the design of most circuits entirely from the information presented a MOTOROLA TMOS POWER MOSFET DATA 3-204
MOTOROLA S7 (XSTRS/R F) bAF D MM 6367254 0098599 450 MBNOTL ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) [characteristics YSymbot [min [max [Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage VpR)DSS 100 Vde (Veg = 0. Ip = 0.25 mA) Zero Gate Voltage Drain Current Ade (Vps = Rated Vpss, Vos - 0) (pg = Rated Vpgg, Veg = 0, Ty = 125°C) Gate-Body Leakage Current, Forward lessF (VasF = 20 Vde, Vos = 0) _ Gate-Body Leakage Current, Reverse - 100 (Vasr = 20 Vde, Vps = 0) ON CHARACTERISTICS* Gate Threshold Voltage Vesith) Vde (Vps = Ves. Ip = 1 mA) 45 Ty = 100°C 4 Static Drain-Source On-Resistance RDston) 0.15 Ohm (Vgg = 10 Vdc, Ip = 10 Ade) Drain-Source On-Voltage (Vgg = 10 V) Vosion) Vde lip = 20 Ade) lip = 10 Adc, Ty = 100°C) Forward Transconductance ps = 10V, Ip = 10) DYNAMIC CHARACTERISTICS (os =25V,Vos=0, | Ces | — | 2000 | 1= 1 MHS) [Goss | — [50 | See Figure 10 [Gres [= a00 | SWITCHING CHARACTERISTICS* (Ty = 100°C) [won [Js] Wop = 2p = o5Retedip [| — | 200 | 0 ohms See Figures 12 and 13 | tao) | — [150 | | — | ts0 | Total Gne Ce wos uosmmavegg tty we Gate-Source Charge p= Ratedip.Vag= 10V) | Ogs | 22 ctyp) | — | See Figure 11 [Oa | a0 | = | SOURCE DRAIN DIODE CHARACTERISTICS* 2st | 4 | vae | Ween [ton | 100 ¢Tve | ns | _ [te | asortye [ns *Pulse Test: Pulse Width = 300 us, Duty Cycle = 20%. MOTOROLA TMOS POWER MOSFET DATA 3-205
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Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching ious case temperatures can be determined by using the . Its Use” provides detailed instructions.
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Figure 9. Thermal Response
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Figure 10. Capacitance Variation Figure 11. Gate Charge versus Gate-To-Source Voltage Figure 12. Switching Test Circuit Figure 13. Switching Waveforms