MTM15N40E MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) 68E D MM 6367254 0098593 T32 MEMOTL MOTOROLA @ SEMICONDUCTOR Se TECHNICAL DATA Desi , MTM15N40E esigners Data Sheet Motorola Preferred Device Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate ‘TMOS POWER FET
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This TMOS Power FET is designed for high voltage, high speed Rps(on) = 0.3 OHM power switching applications such as switching regulators, ™os. 400 VOLTS converters, solenoid and relay drivers. = © Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C 0 © Designer's Data — Ipss. Vps(on). VGSith) and SOA Specified at Elevated Temperature @ Rugged — SOA is Power Dissipation Limited Source-to-Drain Diode Characterized for Use With Inductive Loads G MAXIMUM RATINGS [Rating Sirmbot [Value [nie 8 a [rancor Voge Res = 1ma | Yoga [oo | vee | Gate-Source Voltage — Continuous Ves +20 Vde — Non-repetitive (tp < 50 us) | _VGSM +40 Vpk Drain Current — Continuous 15 a — Pulsed 70 i 4 Total Power Dissipation @ Tc = 25°C Watts . Derate above 25°C wre l THERMAL CHARACTERISTICS CASE 197A-03 Thermal Resistance — Junction to Case Rese cw T0-204AE — Junction to Ambient ReJA Maximum Lead Temperature for Soldering Th °c Purposes, 1/8” from case for 5 seconds Designer's Data for “Worst Case” Conditions — The Designer's Data Sheet permits the design of most circuits entirely from the information presented. ‘SOA Limit curves — representing boundanes on device characteristics — are given to facilitate “worst case" design Preferred device is a Motorola recommended choice for future use and best overall value. MOTOROLA TMOS POWER MOSFET DATA 3-199
MOTOROLA SC (XSTRS/P F) bAE D MM 6367254 0098594 979 MEMOTb ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) OFF CHARACTERISTICS Drain-Source Breakdown Voltage Vier)DSs Vae (Veg = 0, Ip = 0.25 mA) Zero Gate Voltage Drain Current made (ps = Rated Voss. Veg = 0 (Vpg = 0.8 Rated Voss. Vas ~ 0, Ty = 125°C) Gate-Body Leakage Current, Forward (Vagr = 20 Vde, Vps = 0) | gssre_ | — | 100 | nade | Gate-Body Leakage Current, Reverse (Vggp = 20 Vdc, Vp = 0) Igsse_| — | 100 | naa | ON CHARACTERISTICS* Gate Threshold Voltage Vesith) Ve (ps = Ves. Ip = 1 mA | 2 45 Ty = 100°C 15 4 Static Drain-Source On-Resistance (Vgg = 10 Vdc, Ip = 7.5 Adc) Rosion) | — | 03 | ohm | Drain-Source On-Voltage (Vgg = 10 V) Vpsion) Vde {ip = 15 Adc) _ (ip = 7.5 Adc, Ty = 100°C) - Forward Transconductance (Vpg = 15 V, Ip = 7.5 A) [ors | 6 | — | mos | DYNAMIC CHARACTERISTICS. ‘Output Capacitance f = 1 MHz) 500 Reverse Transfer Capacitance See Figure 11 200 ‘SWITCHING CHARACTERISTICS* (Ty = 100°C) rs Te Opel ee see gures 9, 13and 14 |_‘alomh_| __880. Gate-Source Charge Ip = Rated Ip, Veg = 10”) | Qgs__—| 50 (Typ) Gate-Drain Charge See Figure 12 [O94 | 60 (Typ) SOURCE DRAIN DIODE CHARACTERISTICS" a a INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance la 5 (Typ) (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance G 12.5 (Typ) (Measured from the source pin, 0.25" from the package to the source bond pad) *Pulse Test Pulse Width = 300 us, Duty Gycle = 2% MOTOROLA TMOS POWER MOSFET DATA 3-200
Figure 1. On-Region Characteristics Figure 2. Gate-Threshold Voltage Variation
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Figure 3. Transfer Characteristics Figure 4. Breakdown Voltage Variation Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation
Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching
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Figure 10. Thermal Response
Figure 11. Capacitance Variation Figure 12. Gate Charge versus
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Figure 13. Switching Test Circuit Figure 14. Switching Waveforms