MTM15N20 MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) b8E D MM 6367254 0098588 675 MMOTL MOTOROLA = SEMICONDUCTOR Saag TECHNICAL DATA P p Designer's Data Sheet MTM15N20 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET This TMOS Power FET is designed for high speed power Roe PEAS aM switching applications such as switching regulators, converters, Sion) vours solenoid and relay drivers. ® Silicon Gate for Fast Switching Speeds — Switching Times | ® Specified at 100°C L_TMos © Designer's Data — Ips, VpS{on), VGS(th) and SOA Specified D at Elevated Temperature ® Rugged — SOA is Power Dissipation Limited ‘@ Source-to-Drain Diode Characterized for Use With Inductive Loads G MAXIMUM RATINGS [Rating Symbot [Vatu unit | 8 [ Drain-Source Voltage | Voss | 00 ve | Drain-Gate Voltage (Rgg = 1 MQ) Gate-Source Voltage Continuous Ves +20 Vde Non-repetitive (tp < 50 us) VGsm £40 Vpk Drain Current — Continuous 15 | — Pulsed 80 Total Power Dissipation @ Tc = 25°C Watts ToS Derate above 25°C wre | [Operating and Storage Temperature Range | Ty.Tsig | ~e5tots0 |e THERMAL CHARACTERISTICS CASE 197A-03 Thermal Resistance — Junction to Case Rec 0.83 "CW TO-204AE — Junction to Ambient RA 30 Maximum Lead Temperature for Soldering re °c Purposes, 1/8” from case for 5 seconds ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) [characterise TT svmbot [min Tmax [unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS Vde (VGs = 9, Ip = 0.25 mA) MTH15N20, MTM15N20, Zero Gate Voltage Drain Current ‘pss wAde (Vps = Rated Vpss. Ves = 0} (Ty = 125°C) Gate-Body Leakage Current, Forward loss (VGsF = 20 Vde, Vpg = 0} Gate-Body Leakage Current, Reverse Igssr (Vgsr = 20 Vdc, Vps = 0} {continued) Designer's Data for “Worst Case” Conditions — The Designer's Data Sheet permits the design of most circuits entirely from the information presented. Limit MOTOROLA TMOS POWER MOSFET DATA 3-194
MOTOROLA SC (XSTRS/R F) BBE D MM 6367254 0098589 SOL MBNOTE MTM15N20 ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted) [_eharnteise T symbot Tin [max unit] ON CHARACTERISTICS* er i (ps = Vos. Ip = 1 mA) 2 Ty = 100°C 18 [Bt in ssn Sones Wag =e = TEAR | Fao | — | “aw | om] Peewee | lp = 15 Ade) {ip = 7.5 Adc, Ty = 100°C) [Foard YnsndictceW= Wp = TEA] ag) DYNAMIC CHARACTERISTICS [Tae See [Pee [T=] ‘SWITCHING CHARACTERISTICS* (T, = 100°C) [ase [Se a SOURCE DRAIN DIODE CHARACTERISTICS fever | aT See INTERNAL PACKAGE INDUCTANCE (TO-204) pee " (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance ps fee) | (Measured from the source pin, 0.25" from the package to the source bond pad) ‘Pulse Test Pulse Width 900 ys, Duty Cycle « 2% MOTOROLA TMOS POWER MOSFET DATA 3-195
Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching Figure 10. Thermal Response