MTH6N55 MOTOROLA | Alldatasheet

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MOTOROLA SC {XSTRS/R FY 98 Def} b3b7254 0083386 8 * 6367254 MOTOROLA SC (XSTRS/R F) 98D 83386 D MOTOROLA T 349-13 : 2a SEMICONDUCTOR Siena TECHNICAL DATA j Designer's Data Sheet MTH Neo Power Field Effect Transistor MTM6N60 N-Channel Enhancement-Mode Silicon Gate TMOS ‘These TMOS Power FETs are designed for high voltage, high ‘TMOS POWER FETs I speed power switching applications such as switching regulators, ‘6 AMPERES: converters, solenoid and relay drivers. "DS{on) = 1.2 OHMS Fy @ Silicon Gate for Fast Switching Speeds — Switching Times ™ 550 and 600 VOLTS Psi Specified at 100°C TMOS 1 Pc) @ Designer's Data — Ipss, Vos(on): Vasith) and SOA Specified at Elevated Temperature Se © Rugged — SOA is Power Dissipation Limited 0 @ Source-to-Drain Diode Characterized for Use With Inductive Loads MAXIMUM RATINGS 6 MATHENEO MTM6NEO [ Drain-Source Votage | Voss | 650 [600 | vac . [ Drain-Gate Vonage Rag = ma) | Voor | sso [600 [vue _| Gate-Source Voltage Continuous Yes +20 Vee Non-repstitive (ty = 50 us) Vos 240 Vpk peewee ets I=) |) @& Pulsed j ro i Toi Power Disipation @ Tg = 25° Wate SE, Derate above 26°C wre fre ‘THERMAL CHARACTERISTICS mirmeNco Thermal Resistance — —dunction to Gase | Rauc om “ow Case 1.08 1 — Junction to Rasa 20 TO-20408 * Ambient i . ‘Maximum Lead Temperature for Soldering TL Purposes, 1/6" from case for 5 seconds . ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) \\') OFF CHARACTERISTICS G Y] Drain-Source Breakdown Voltage VieRIDSS Vac (Gg = 9, Ip = 0.25 mA) MTHGNES 850 aTHoNss MTHE6N60, MTM6N60_ 600 MTHEN6O CASE 340-02 Zero Gate Vollage Drain Current oziene (Vos = Rated Voss. Ves = 0) ps = 08 Rated Voss. : - Vos = 0,Ty = 125%) ‘eon Dexigner Data for “Wore Cae” Cantons — The Designs Date Sheet permits th design of most cults enirly rom the nfrmation presented, Lin aingn* ypresating bouncer on device charctrsten ee given to acinas "worst ese” esr. a . MOTOROLA TMOS POWER MOSFET DATA 3-248 ,

MOTOROLA SC {XSTRS/R FI 98 vel 63b7254 00833987 O ii : 6367254 MOTOROLA SC (XSTRS/R F) 98D 83387 D | MTH/MTMEN55, 60 TT - 3 q -| 3 ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted) OFF CHARACTERISTICS GeteBody Leokage Curent, Forward wade (VasF = 20 Vde, Vps = 0) Gate-Body Leakage Current, Reverse (Vgsr = 20 Vde. Vps = 0) ON CHARACTERISTICS Gate Threshold Voltage Vde (os = Vas: Ip = 1 mA) TPS joo [ Siosbrein Source Onocnones eg = We ip = Shad | vosten [| — [42 | Oona |

5 Drain-Source On-Voltage (Vqg = 10 V) Vpston) "Ve E™

lip = 6 Adc) 9 3 (ip = 3 Ade, Ty = 100°C) 12 B [Foward Trenscondusineo Mog=TeWip=30 Sd ws | 2 | = DYNAMIC CHARACTERISTICS | [ourcanestonees | wogcasvives=o, [Sw | — | ‘00 | es rr a vere Trnaor Cepacaes See Faw 7 re a ‘SWITCHING CHARACTERISTICS* (Ty = 100°C) ee Rise Time To ona a ee saBbure sina [aoe |= 200 | | fautime ee ee Wor soanacavoes, [| om |_| iow faedip vos 10”) [Oye | zecrmr | _— | ‘SOURCE DRAIN DIODE GHARAGTERISTION? \\ Ves = 0) [tn [tts by ay ndoines [we feo | — [| ! INTERNAL PACKAGE INDUCTANCE (TO-204) . Internal Drain Inductance la (Measured from the contact screw on the header closer to the source pin and the center of the die) - Taternal Souree Inductance 728 tie) (Measured from the source pin, 0.25” from the package to the source bond part) INTERNAL PACKAGE INDUCTANCE (TO-218) Internal Drain Inductnco 7 (Moeauad rom aorow on ab to contr ofc) UMeesured from the dren leod 0.26" rom pockoge to conter ofa) Internal Source Inductance Ls 10 (Typ) (Measured from the source lead 0.25" from package to center of die) H Pe MOTOROLA TMOS POWER MOSFET DATA 3-249 . i

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Figure 3. Transfer Characteristics Figure 4, Breakdown Voltage Variation i Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation i MOTOROLA TMOS POWER MOSFET DATA.

Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching x ' Vienioss- The switching SOA shown in Figure 8 is ap- A, GATE RESISTANCE (OHMS) .

28 RC ey ;

005 Fo ae uk PULSE TRAIN SHOWN i

Figure 10. Thermal Response

Figure 13. Switching Test Circuit Figure 14. Switching Waveforms

MOTOROLA SC (XSTRS/ RF ) 4bE D MM 6367254 0093290 1 MENoTs OUTLINE DIMENSIONS - T-39-11 se NOTES : c uci No TOLERANCNG PER ANS s Yeah oa { { 2 CONTROLLING OMENSION INCH \\- SLE 2 0. u PN! GATE [om PS |B level | 2 Sran ou an Twas aT | “ @ 3. sounce Ca [sre fiser Post] i (CePioot Pina T ose [oa | 1 2 3 Certrereor for ore | HUY Fate xf LY 6 H Hoa fsa Poa | 01] UT EScciee e| I [xf i270 | 1427 [0500 | 0582 ble J Te tnet 1s os Poon | tN Petar Prof eme oe| I L mR [raf aa [sao [oes fo 1se | a 3a Petar re MELE Case P ss tons Poa] Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Center; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 SBP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141 Japan. ASIA-PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. mm” (SY MOTOROLA Ca MTA2NGOE 9 hota sk it tra ne 8 0 es en