MTH200 MICROSEMI | Alldatasheet
Document overview
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Technical content
(RED DOT) k (BLACK 007) N. Minimum Maximum Minimum Maximum Notes chy | R “ww law Boo--- 100 === 25.4 A LOCATION S GG --- -830 --- 21.08 MARK L ACT AC2 AGS H --- 930, --- 23.62 8 D Jo aes 13500 --= 3.43 boone 156 --- 3.96 Dia. i |, Sn fm, ee Note: Electrically Isolated Microsemi Repetitive Peak © Glass Passivated Die Catalog Number Reverse Voltage | © Hermetically sealed MTH200 200V © Soft Recovery MTH400 400V © 195° . MTH600 600V 175°C Junction temperature MTH800 800V © 2000VDC Isolation voltage
Electrical Characteristics
DC output current lo 25A Tc = 120°C, Rec = 1.0°C/w Maximum Surge Current per leg 'FSM 150 Amps 8.3mS, half sine,TC = 100°C Maximum |°t For Fusing I2t 40A2s Max. Peak Forward Voltage per leg VFM 1.5 Volts 'FM =_25A:TJ = 25°C Max. Peak Reverse Current per leg 'RM 10 pA VRRM ,Ty = 25°C Max. Peak Reverse Current per leg 'RM 1.0 mA VRRM ,TJ = 150°C Thermal and Mechanical Characteristics Storage temperature range TsT¢ -65°C to 175°C Operating junction temperature range Top -65°C to 175°C Max thermal resistance per package ReJc 1.0°C/W 1-9-01 Rev. 1 ra COLORADO ry 800 Hoyt Street Broomfield, CO. 80020 jcrosemi 522 FAX: (303) 466-5775 www.microsemi.com
Typical Forward Characteristics — Per Diode Forward Current Derating 100 (oo eer 9 220 SSeS oo a $ 200 a 2 a a 2 3 180 FEA ESC He AT 3 160} So LIN ET TT YT /| 2 140 — ] Poot TEN ET TT 10 5 100 a | KK = EERE EEE eo ttt TET | ft | | 80 a a a | 0 10 20 30 40 60 ee Average Forward Current - Amperes es LITT TT TTT TTT 3 1 “ 1.0 | | A $ | A 8 eeeererrere eee ey 2 A s [TTY TT Tyr yey ey & [TTT TTT TTT TT TY e LET TT TTT TTT £o1 0 04 08 12 16 18 20 24 Instantaneous Forward Voltage — Volts Figure 2 Typical Reverse Characteristics
10000 SSS SSS
= 1000 i ee ® 10 Lae)
5 SS SS
é ——— ce 5 10 Ga
8 SSS SS SS
eo R&C td 0 200 400 600 800 —‘ 1000 Reverse Voltage — Volts 1-9-01 Rev. 1