MTH40N06 STMICROELECTRONICS | Alldatasheet
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YF, ivncRoELEcrRoMics MTH4ONO6FI Ca SG S-THOMNSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS MTH40NO6 | 60V | 0.0289 | 40A MTH4ONOSFI| 60V | 0.0289 | 26A * VERY LOW ON-LOSSES . S. * RATED FOR UNCLAMPED INDUCTIVE Gs = SWITCHING (ENERGY TEST) * . * LOW DRIVE ENERGY FOR EASY DRIVE \\ * HIGH TRANSCONDUCTANCEIC,,, RATIO. AUTOMOTIVE POWER APPLICATIONS N= channel enhancement mode POWER MOS field T0218 ae effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching cirouit in applications such as power actuator driving, motor drive including Lbatbery SCHEMATIC 8 brushless motors, hydraulic actuators and many other uses in automotive applications. 5 They also find use in DC/DC converters and unin- terruptible power supplies. J MAXIMUM RATI ABSOLUTE NGS 10-218 MTH40NOs ISOWATT218 MTH4ONO6FI Vos Drain-source voltage (Vgg = 0) 60 Vv Vper __Drain-gate voltage (Rag= 1 MO) 60 v Ves Gate-source voltage £20 v low Drain current (pulsed) 140 A
70.218 ISOWATT218
Ip™ Drain current (cont.) T,= 20°C 40 26 A Pi" Total dissipation at T, <25°C 150 65 w = Derating factor - 12 0.52 WIeC Tog Storage temperature ~65 to 150 °c y Max. operating junction temperature 150 . °c * See note on ISOWATT218 in this datasheet * Introduced in 1988 week 44
8 0 sciivEseT . THERMAL DATA ® TO-218 | ISOWATT218 Rin - case Thermal resistance junction-case max 0.83 | 1.92 °cw T Maximum lead temperature for soldering purpose max 275 °C ELECTRICAL CHARACTERISTICS (Toas9=25°C unless otherwise specified) _ ec) OFF Var) pss Drain-source Ip= 100 pA Ves= 0 Vv breakdown voltage logs Zero gate voltage Vpg= Max Rating x 0.85 250 | wA drain current (Vqg=0) | Vpg= Max Rating x 0.85 T,= 100°C| 1000] 2A less Gate-body leakage Vas = #20 V +100] nA current (Vpg =0) ON * Vas chy Gate threshold Vos= Ves Ip= 1 mA 45 |v voltage Vos= Vas Ip= 1 mA T,= 100°C 4}v Ros on) Static drain-source | Vgg= 10V Ip= 20A (0.028 ‘on resistance Vos (on) Drain-source on Veg= 10V Ip= 40A v voltage Veg= 10V Ip= 20A Ty= 100°C v ENERGY TEST * | tus Unclamped inductive | Vpp= 30 V L = 100 wH switching current starting T)= 25°C (single pulse) DYNAMIC Os" Forward Vos= 15 V Ip= 20A transconductance Ciss Input capacitance 5000 | pF Cogs “Output capacitance =| Vpg= 25 V f= 1 MHz 2500] pF Cys ‘Reverse transfer Ves= 0 1000| pF capacitance Q Total gate charge Vps= 50V Ip= 40A nc Ves= 10 V 216 . Se I BESET $$
ELECTRICAL CHARACTERISTICS (Continued) TOT vais [os | SWITCHING T-39-1] tae Turron time Vpo= 25V Ip= 20A 60 | ns | t Rise time Rgen= 50 2 300 | ns tao) Turn-off delay time 150 | ns i Fall time 100 | ns SOURCE DRAIN DIODE Veo Forward on voltage | Isp= 40 A Vas= 0 [ [| [sv] tie Reverse recovery time | Ign= 40 A Ves= 0 : ton Forward turn-on time * Pulsed: Pulse duration < 300 xs, duty cycle < 2% ™ Seo note on ISOWATT218 in this datasheet Safe operating areas Thermal impedance Derating curve (standard package) (standard package) (standard package) ‘SSeS Eee “COO SS =Ee | Raia | COC ey eri errnn CHC ene Hi = “CONG coon wf Sepals Tal eterna mee TTL ye NI ry (Lee SS ESS [en Bain at Him PTE NTT rr “POR PSSS SES HH welll Ni Se Se 2 2 oe, wl LETINEENL| eae FECES SS ee es See a ee ic Ith HASH feet ee uli Tien i »BEEH EEEN HA wl, im (iE ol ME IA l CECECEECCLrN wf SOS Nostvy 10% wt oF wt tts . BOF 6 a Output characteristics Output characteristics Transfer characteristics eT TTT To 7eL) EEE “ee ageoem LEER EEHt Peer FREE cet PL Aer « HEE ss EEE EEEEHEEEH a BREE RaeeeZase BEECH ero} > EE Hea -E EECA HH 725--= » TEESE EEEEEE EE ot EEREEEEEEEEYPEEE | ga HEE EEE EEE a EEEEEE EEE EEE WOGeCCEET HERRERA) EEE EEE EEE TT GAAT TTT = REE EEE EEE | HERE EHF] Y FEEEEEEEE EEE EH HEHEHE HAA a) 24S PEER LL ed @ EEEEEEE CHARLEY Yeo el | EERE EEE EEE HEH wn EEESEEEEEEEEEEEEE UE = 36
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Switching times test circuit for résistive load Switching time wavetorms tor resistive toad ~---,90% y, : : van Py fron ; Fh a raw Jas TY” a, = | oF “Vp! i our. Yor fi in A 1 \\iorw. fl ta tg(on) tr s-6os9—tavott) 4 Pulse width < 100 ps Col 4] Duly cycle < 2% Unclamped inductive load test circuit Unclamped inductive waveforms Veerioss i vy —>| B L=100pH . Yoo w_| Vo be,” S 2 5 Yoo “ Yoo H - - = sc-0316 scan V\\= 12 V - Pulse width: adjusted to obtain —— specified Ipxy Gate charge test circuit Body-drain diode t,, measurement Jedec test circuit Yoo ” snc — rv] hoa rn sms / ‘ _ 1000 wnt . won cur ont evoux = OOO I) our. ® = vaKa Meo Vika. “ej KA - ‘50-0305 PW adjusted to obtain required Vg ‘SGS-THOM: 5/6 383
ISOWATT218 PACKAGE THERMAL IMPEDANCE Ur — CHARACTERISTICS AND APPLICATION. ISOWATT218 PACKAGE ISOWATT218 is fully isolated to 4000V de. Its ther- Fig, 1 illustrates the elements contributing to the mal impedance, given in the data sheet, is optimi- thermal resistance of transistor heatsink assembly, sed to give efficient thermal conduction together using ISOWATT218 package. with excellent eléctrical isolation. The total thermal resistance Ry, «oy Is the sum of The structure of the case ensures optimum distan- each of these elements. ces between the pins and heatsink. These distan- _ The transient thermal impedance, Z,, for different ces are in agreement with VDE and UL creepage pulse durations can be estimated as follows: and clearance standards. The ISOWATT218 pac- 1-for a short duration power pulse less than 1ms; kage eliminates the need for external isolation so reducing fixing hardware. Zn< Pirc ‘The package is supplied with leads longer than the standard 10-218 to allow easy mounting on pebs, 2" for an intermediate power pulse of Sms to 60ms: Accurate moulding techniques used in manufac- Zin= Pinc ture assures consistent heat spreader-to-heatsink capacitance 3 - for long power pulses of the order of 500ms or ISOWATT218 thermal performance is better than "eater: that of the standard part, mounted with a 0.1mm Zn= Rinc + Pincus + Pintis-amb mica washer. The thermally conductive plastic has a higher breakdown rating and is less fragile than _!t is often possibile to discern these areas on tran- mica or plastic sheets. Power derating for — ‘lent thermal impedance curves. ISOWATT218 packages is determined by: T- Te Fig. 1 Pp= ———— ig. Rin from this Ipmax for the POWER MOS can be cal- Ritu-c Renc-s Rths-amb culated: A A AKA Pp max Rene 'Ds(on) (at 150°C) ISOWATT DATA Safe operating areas Thermal impedance Derating curve N errr ee ccour SSS See | {EaHt ee iceatil eal Ee Sull we CEL ENS tetra: TUM TIE Cer Pere VESESHH fee Ms Le [et meer He CENCE See iss Ne Eee EHR i eEEEEEEEREEE EEE “COMPEENISS-EIReICINE-R PU) EEE esse Se SSeen Be Se Se Sco oe eeee ARSC ESESSEIFHITE TI)» EEEEECEEE ERS | CCTM SS CECT EE eC COCEEEe ere rN Pc er eT | O25 40 GO 60 10 BO HO Teml'Cd 6/6 : gee SI STEERER