MTH15N40 MOTOROLA | Alldatasheet

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Technical content

. 1 MTH15N35 Designer's Data Sheet MTH15N40 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS ‘TMOS POWER FETs

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‘These TMOS Power FETs are designed for high voltage, high DS(on) = 0.3 OHM speed power switching applications such as switching regulators, st 350 and 400 VOLTS converters, solenoid and relay drivers. TMOS ® Silicon Gate for Fast Switching Speeds — Switching Times Ea ah Specified at 100°C aes © Designer's Data — Ipss- Vos(on)- VGsith) and SOA Specified Kr at Elevated Temperature ee ‘@ Rugged — SOA is Power Dissipation Limited % , ‘© Source-to-Drain Diode Characterized for Use With Inductive Loads MAXIMUM RATINGS: G Pe | oe ee | | | rainSource Votage | Voss | aso | ao0 | vee | | Brain-Gate Voteue gs =1Ma) | Yoga | 360 | 00 | veo | Gate-Source Voltage Continuous Ves Vde Non-repetitive (tp < 50 8) Vosm Vpk Drain Current — Continuous 15 — Pulsed 75 \\ Total Power Dissipation @ Tc = 25°C 180 Watts: +\\ | Dorate above 25°C 12 wre », Ti | Operating and Storage Temperature Range | Ty Tag | -e5t0180 |e _| Yy ‘THERMAL CHARACTERISTICS UY ‘Thermal Resistance © — Junction to Case Roc “CW — Junction to Rea ‘Ambient Maximum Lead Temperature for Soldering nL c CASE 340-02 Purposes, 1/8" from case for 6 seconds ‘TO-218AC ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) OFF CHARACTERISTICS ‘Drain-Source Breakdown Voltage VieR)Dss Vde (Vas = 0, Ip = 0.25 mA) MTHI5N35_ MTH15N40 Zero Gate Voltage Drain Current mAdc (Vps = Rated Voss. Ves = 0) (ps ~ 0.8 Rated Voss, Vos = 0, Ty = 125°C) | Gste-Body Leakage Curront, Forward (VagF = 20Vée,Vos= 0) | tess | — | 100_| nade _| [_Goto-Body Leakage Current Reverse Vag = 20 Vdc, Vps=0) | Igssa | — | 100 | nado _| ‘eominuea) Designer’ Dats fr “Worst Cass” Condions—Tho Designs Data Shest permits th design of most ruta trey om th narmation presente. Lt curves oprecating boundaries on devia Sharseracs = are MOTOROLA TMOS POWER MOSFET DATA 3-329

ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise nofed) ON CHARACTERISTICS* Gate Threshold Voltage Wps = Vos:'0 = 1mA) 45 Ty = 100°C 4 Static Drain-Source On-Resistance (Vgs = 10 Vde, Ip = 8 Ado) | sto | — | 03 | Onm | Drain-Source On-Voltage (Vag = 10V) Voston) vée {ip = 15 Ade) {ip = 8 Ade, Ty = 100°C)

3 DYNAMIC CHARACTERISTICS

‘SWITCHING CHARAGTERISTICS* (Ty = 100°C) Turn-On Delay Time [tom [= | Ban 2 cha [oe [=| 80 Total Gato Charge (os = 08 Rated Vs, |_Oa | 110(T¥p) [160 | Gate-Source Charge Ip=Ratedip, Vas = 10V) [Qs | s0cTv) | — | Gate-Drain Charge Seo Figure 12 [Qa [| sorter | — | ‘SOURCE DRAIN DIODE CHARACTERISTICS* Forward Turn-On Time Vos = 0) [ton | Limited by stray Inductance a INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance la (Measured from screw on tab to center of die) (Typ) (Measured from the drain lead 0.25" from package to center of die) 5 (Typ) internal Source Inductance ty 10 (Typ) (Measured from the source leed 0.26" from package to center of die) : *Pulee Test Pulse Width < 200 no, Duty Cycle « 2%, MOTOROLA TMOS POWER MOSFET DATA 3-330

23 SS FFI <

8 Loe cin ESSE = 3 o1 1] TI yy

Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching