MTE30N50E MOTOROLA | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0065/C0100/C0118/C0097/C0110/C0099/C0101 /C0073/C0110/C0102/C0111/C0114/C0109/C0097/C0116/C0105/C0111/C0110 /C0073/C0083/C0079/C0084/C0079/C0080/n636861720000000000000000/C0084/C0077/C0079/C0083 /C0069/C0045/C0070/C0069/C0084/C0046 /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement–Mode Silicon Gate This advanced TMO S E –FET is designed to withstand high energy in the avalanche m ode and switch efficiently. This new energy design also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in powe r supplies, PW M m otor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

  • 2500 V RMS Isolated ISOTOP Package
  • Avalanche Energy Specified
  • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • Very Low Internal Parasitic Inductance
  • IDSS and VDS(on) Specified at Elevated Temperature
  • U.L. Recognized, File #E69369 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 500 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ ) VDGR 500 Vdc Gate–to–Source Voltage — Continuous — Non–Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current — Continuous @ 25°C Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) ID ID IDM Adc Apk Total Power Dissipation @ 25°C Derate above 25°C PD 250 2.0 Watts W/°C Operating and Storage T emperature Range TJ, Tstg –55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, Peak IL= 30 Apk, L = 10 mH, RG = 25 Ω ) EAS 3000 mJ Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient R θJC R θJA 0.5 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C This document contains information on a new product. Specifications and information herein are subject to change without notice. E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. ISOTOP is a trademark of SGS–THOMSON Microelectronics. Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by MTE30N50E/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0084/C0069/C0051/C0048/C0078/C0053/C0048/C0069 TMOS POWER FET

30 AMPERES

500 VOLTS

R DS(on) = 0.150 OHM Motorola Preferred Device D S G SOT–227B 1. Source 2. Gate 3. Drain 4. Source 2  Motorola, Inc. 1996

/C0077/C0084/C0069/C0051/C0048/C0078/C0053/C0048/C0069

2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 500 560 566 Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 200 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) Threshold T emperature Coefficient (Negative) VGS(th) 2.0 3.2 7.0 4.0 Vdc mV/°C Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 15 Adc) R DS(on) — 0.13 0.15 Ohms Drain–to–Source On–Voltage (VGS = 10 Vdc, ID = 30 Adc) (VGS = 10 Vdc, ID = 15 Adc) VDS(on) 4.1 5.0 7.0 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc) gFS 17 — — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C iss — 7200 10080 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss — 775 1200 Transfer Capacitance f = 1.0 MHz) C rss — 120 250 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (VDD = 250 Vdc, ID = 30 Adc, VGS = 10 Vdc, R G = 4.7 Ω ) td(on) — 32 60 ns Rise Time (VDD = 250 Vdc, ID = 30 Adc, VGS = 10 Vdc, R G = 4.7 Ω ) tr — 105 175 Turn–Off Delay Time VGS = 10 Vdc, R G = 4.7 Ω ) td(off) — 160 275 Fall Time G = 4.7 Ω ) tf — 115 200 Gate Charge (see figure 8) (VDS = 400 Vdc, ID = 30 Adc, VGS = 10 Vdc) Q T — 235 350 nC (see figure 8) (VDS = 400 Vdc, ID = 30 Adc, VGS = 10 Vdc) Q 1 — 35 —(VDS = 400 Vdc, ID = 30 Adc, VGS = 10 Vdc) Q 2 — 110 — Q 3 — 65 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 30 Adc, VGS = 0 Vdc) (IS = 30 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.95 0.88 1.2 Vdc Reverse Recovery Time (IS = 30 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) trr — 485 — ns (IS = 30 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) ta — 312 —(IS = 30 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb — 173 — Reverse Recovery Stored Charge Q RR — 8.2 — µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance LD — 5.0 — nH Internal Source Inductance LS — 5.0 — nH (1) Pulse Test: Pulse Width ≤/n636861720000000000000000300 µs, Duty Cycle ≤ 2%. (2)Switching characteristics are independent of operating junction temperature.

4 Motorola TMOS Power MOSFET Transistor Device Data

by recognizing that the power MOSFET is charge controlled. by current from the generator. and Q2 and VGSP are read from the gate charge curve. on–state when calculating td(off). voltage at the source which reduces the gate drive current. tion of drain current, the mathematical solution is complex. sure and, consequently, is not specified. Figure 7. Capacitance Variation

6 Motorola TMOS Power MOSFET Transistor Device Data

Figure 12. Maximum Rated Forward Biased Figure 13. Maximum Avalanche Energy versus Figure 14. Thermal Response Figure 15. Diode Reverse Recovery Waveform

/C0077/C0084/C0069/C0051/C0048/C0078/C0053/C0048/C0069 7Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS SOT–227B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A MIN MAX MIN MAX INCHES 31.50 31.70 1.240 1.248 MILLIMETERS B 7.80 8.20 0.307 0.322 C 4.10 4.30 0.161 0.169 D 14.90 15.10 0.586 0.590 E 30.10 30.30 1.185 1.193 F 38.00 38.20 1.496 1.503 G 4.00 0.157 H 11.80 12.20 0.464 0.480 L 8.90 9.10 0.350 0.358 M 12.60 12.80 0.496 0.503 N 25.20 25.40 0.992 1.000 P 1.95 2.05 0.076 0.080 Q 4.10 0.157 R 0.75 0.85 0.030 0.033 S 5.50 0.217 STYLE 1: PIN 1. SOURCE 2. GATE 3. DRAIN 4. SOURCE 2 Q G C B A 1 2 D E F M N R L H P S Recommended screw torque: 1.3/C0034 0.2 Nm Maximum screw torque: 1.5 Nm

/C0077/C0084/C0069/C0051/C0048/C0078/C0053/C0048/C0069

8 Motorola TMOS Power MOSFET Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE : Motorola Literature Distribution; JAPAN : Nippon Motorola Ltd.; T atsumi–SPD–JLDC, T oshikatsu Otsuki, P .O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 T atsumi Koto–Ku, T okyo 135, Japan. 03–3521–8315 INTERNET : http://Design–NET .com 51 Ting Kok Road, T ai Po, N.T ., Hong Kong. 852–26629298 MTE30N50E/D /C0042/C0077/C0084/C0069/C0051/C0048/C0078/C0053/C0048/C0069/C0047/C0068/C0042