MTE130N20J3 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • Low Gate Charge
  • Simple Drive Requirement
  • Fast Switching Characteristic
  • Pb-free lead plating and halogen-free package Symbol Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel TO-252(DPAK) MTE130N20J3 G：Gate D：Drain S：Source BVDSS 200V ID@VGS=10V , TC=25°C 18A ID@VGS=10V , TA=25°C 1.9A 156mΩ RDSON(TYP) @ VGS=10V , ID=9A Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name G D S

CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 2/9 MTE130N20J3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS 200 Gate-Source V oltage VGS ±20 V Continuous Drain Current @ TC=25°C (Note 1) 18 Continuous Drain Current @ TC=100°C (Note 1) ID 13 Pulsed Drain Current (Note 3) IDM 30 Continuous Drain Current @ TA=25°C (Note 4) 1.9 Continuous Drain Current @ TA=70°C (Note 4) IDSM 1.5 Avalanche Current (Note 3) IAS 3 A Avalanche Energy @ L=1mH, ID=3A, VDD=50V (Note 3) EAS 4.5 mJ TC=25°C (Note 1) 125 Power Dissipation TC=100°C (Note 1) PD 62.5 W TA=25°C (Note 2) 2 Power Dissipation TA=70°C (Note 2) PDSM 1.3 W Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 1.2 °C/W Thermal Resistance, Junction-to-ambient, max, t≤10s (Note 2) 62.5 °C/W Thermal Resistance, Junction-to-ambient, max (Note 4) Rth,j-a 90 °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.

CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 3/9 MTE130N20J3 CYStek Product Specification Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 200 - - V VGS=0V , ID=250μA ∆BVDSS/∆Tj - 0.2 - V/°C Reference to 25°C, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA GFS - 12 - S VDS =10V , ID=9A IGSS - - ±100 nA VGS=±20V - - 1 VDS =180V , VGS =0V IDSS - - 10 μA VDS =180V , VGS =0V , Tj=125°C *RDS(ON) - 156 195 mΩ VGS =10V , ID=9A Dynamic *Qg - 19 - *Qgs - 5 - *Qgd - 7.2 - nC VDS=160V , ID=18A, VGS=10V *td(ON) - 12.6 - *tr - 35 - *td(OFF) - 27.6 - *tf - 14.6 - ns VDS=100V , ID=18A, VGS=10V , RG=6Ω Ciss - 813 - Coss - 85 - Crss - 36 - pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode *IS - - 18 *ISM - - 30 A *VSD - 0.86 1.2 V IS=18A, VGS=0V *trr - 80 - ns *Qrr - 245 - nC IF=18A, VGS=0, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint

CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 4/9 MTE130N20J3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 0V DS, Drain-Source Voltage(V) ID, Drain Current(A) 10V, 9V, 8V, 7V VGS=4.5V VGS=5V VGS=6V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=4.5V VGS=6V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 200 300 400 500 600 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.5 1.5 2.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=9A RDS(ON)@Tj=25°C :156mΩ typ VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=9A

CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 5/9 MTE130N20J3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss NormalizedThreshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 4 8 1 21 62 02 4 Total Gate Charge---Qg(nC) VGS, Gate-Source Voltage(V) VDS=100V ID=18A VDS=160V VDS=40V Maximum Safe Operating Area 0.1 100 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs RDS( ON) Limit TC=25°C, Tj=175°, VGS=10V RθJC=1.2°C/W, Single Pulse Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 200 TC, Case Temperature(°C) ID, Maximum Drain Current(A) VGS=10V, RθJC=1.2°C/W

CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 6/9 MTE130N20J3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 02468 1 0 V GS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Maximum Power Dissipation 500 1000 1500 2000 2500 3000 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=175°C TC=25°C θJC=1.2°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.2°C/W

CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 7/9 MTE130N20J3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 8/9 MTE130N20J3 CYStek Product Specification Recommended wave soldering condition Peak Temperature Soldering Time Product Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 9/9 MTE130N20J3 CYStek Product Specification TO-252 Dimension Marking: Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead : Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. E130 Device Name N20 Date □□□□ Code 2 31 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3