MTE050N15ARJ3-0-T3-G

MTE050N15ARJ3 CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 1/ 9 MTE050N15ARJ3 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTE050N15ARJ3 BVDSS 150V 20A ID@TC=25°C, VGS=10V RDS(ON)@VGS=10V , ID=15A 48 mΩ(typ) Features • Low On Resistance

• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package Symbol Outline MTE050N15ARJ3 TO-252(DPAK) G D S G：Gate D：Drain S：Source

Ordering Information

TO-252 MTE050N15ARJ3-0-T3-G (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 2/ 9 MTE050N15ARJ3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage (Note 1) VDS 150 Gate-Source V oltage VGS ±20 V Continuous Drain Current @TC=25°C, VGS=10V (Note 1) 20 Continuous Drain Current @TC=100°C, VGS=10V (Note 1) ID 14 Continuous Drain Current @TA=25°C, VGS=10V (Note 2) 4.3 Continuous Drain Current @TA=70°C, VGS=10V (Note 2) IDSM 3.4 Pulsed Drain Current @ VGS=10V IDM 60 Avalanche Current @L=0.1mH (Note 3) IAR 40 A Single Pulse Avalanche Energy @ L=0.5mH, ID=20 Amps, VDD=50V (Note 5) EAS 100 Repetitive Avalanche Energy (Note 3) EAR 6 mJ TC=25°C (Note 1) 60 TC=100°C (Note 1) PD 30 TA=25°C (Note 2) 2.5 Power Dissipation TA=70°C (Note 2) PDSM 1.6 W Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C *Drain current limited by maximum junction temperature Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2.5 Thermal Resistance, Junction-to-ambient, max (Note 2) 50 Thermal Resistance, Junction-to-ambient, max (Note 4) RθJA 110 °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. 5. 100% tested by conditions of VDD=50V , L=0.1mH, VGS=10V , IAS=10A

CYStech Electronics Corp. Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 3/ 9 MTE050N15ARJ3 CYStek Product Specification Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 150 - - V VGS=0V , ID=250μA ∆BVDSS/∆Tj - 0.13 - V/°C Reference to 25°C, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA *GFS - 14.4 - S VDS =5V , ID=10A IGSS - - ±100 nA VGS=±20V , VDS=0V IDSS - - 1 VDS =120V , VGS =0V IDSS - - 25 μA VDS =120V , VGS =0V , Tj=125°C *RDS(ON) - 48 65 mΩ VGS =10V , ID=15A Dynamic *Qg - 22.7 - *Qgs - 5.7 - *Qgd - 5.5 - nC VDD=75V , ID=15A,VGS=10V *td(ON) - 14.2 - *tr - 16.6 - *td(OFF) - 28.6 - *tf - 8.8 - ns VDD=75V , ID=10A, VGS=10V , RG=3Ω Ciss - 1269 - Coss - 76 - Crss - 10 - pF VGS=0V , VDS=80V , f=1MHz Source-Drain Diode *IS - - 20 *ISM - - 60 A *VSD - 0.85 1.2 V IS=10A, VGS=0V *trr - 54 - ns *Qrr - 124 - nC VGS=0V , IF=10A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint

CYStech Electronics Corp. Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 4/ 9 MTE050N15ARJ3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 0 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V VGS=4.5V 5.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=4.5V VGS=6V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.0 1.2 048 1 2 1 6 2 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 150 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=15A RDS( ON)@Tj=25°C : 48mΩ typ. VGS=6V, ID=10A RDS( ON)@Tj=25°C : 53mΩ typ. VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=15A

CYStech Electronics Corp. Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 5/ 9 MTE050N15ARJ3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 1 02 03 04 05 06 07 08 0 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss f=1MHz Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=5V VDS=10V Gate Charge Characteristics 0 4 8 1 21 62 02 4 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=15A VDS=120V VDS=30V VDS=75V Maximum Safe Operating Area 0.1 100 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 100ms 10μs 10ms 100μs 1ms RDS( ON) Limited TC=25°C, Tj(max)=175°C VGS=10V,RθJC=2.5°C/W Single Pulse Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 200 T C, Case Temperature(°C) ID, Maximum Drain Current(A)Tj(max)=150°C,RθJC=2.5°C/W, VGS=10V, Single Pulse

CYStech Electronics Corp. Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 6/ 9 MTE050N15ARJ3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0123456789 1 0 V GS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Power Rating, Junction to Case 500 1000 1500 2000 2500 3000 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=175°C TC=25°C RθJC=2.5°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5°C/W

CYStech Electronics Corp. Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 7/ 9 MTE050N15ARJ3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C035J3 Issued Date : 2017.08.17 Revised Date : Page No. : 8/ 9 MTE050N15ARJ3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) 217°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Issued Date : 2017.08.17 Revised Date : Page No. : 9/ 9 Spec. No. : C035J3 MTE050N15ARJ3 CYStek Product Specification TO-252 Dimension Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. Marking: Device Name Date Code E050N 15AR □□□□ 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 DIM Min. Max. Min. Max. Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.