MTE020N10RH8

MTE020N10RH8 CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : C745H8 Issued Date : 2017.08.16 Revised Date : 2017.08.21 Page No. : 1/ 11 MTE020N10RH8 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTE020N10RH8 BVDSS 100V 28.5A ID@VGS=10V , TC=25°C Features 6.8A ID@VGS=10V , TA=25°C • Low On Resistance RDS(ON)@VGS=10V , ID=20A 20.4mΩ(typ) • Simple Drive Requirement

• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package Symbol Outline DFN5×6 MTE020N10RH8

Ordering Information

MTE020N10RH8-0-T6-G DFN 5 ×6 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel G：Gate D：Drain S：Source Pin 1 Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name S S S G D D D D S S G D D D D S Pin 1

CYStech Electronics Corp. Spec. No. : C745H8 Issued Date : 2017.08.16 Revised Date : 2017.08.21 Page No. : 2/ 11 MTE020N10RH8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage (Note 1) VDS 100 Gate-Source V oltage VGS ±20 V Continuous Drain Current @TC=25°C, VGS=10V (Note 5) 28.5 Continuous Drain Current @TC=100°C, VGS=10V (Note 5) ID 20.2 Continuous Drain Current @TA=25°C, VGS=10V (Note 2) 6.8 Continuous Drain Current @TA=70°C, VGS=10V (Note 2) IDSM 5.4 Pulsed Drain Current @ VGS=10V (Note 3) IDM 114 Avalanche Current (Note 3) IAS 28.5 A Single Pulse Avalanche Energy @ L=1mH, ID=14Amps, VDD=25V (Note 4) EAS 72 Repetitive Avalanche Energy (Note 3) EAR 5 mJ TC=25°C (Note 1) 50 TC=100°C (Note 1) PD 25 TA=25°C (Note 2) 2.5 Power Dissipation TA=70°C (Note 2) PDSM 1.6 W Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C *Drain current limited by maximum junction temperature Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 3 Thermal Resistance, Junction-to-ambient, max (Note 2) RθJA 50 °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user’s specific board design. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. 4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 100% tested by conditions of VDD=25V, ID=20A, L=0.1mH, VGS=10V. 5. Calculated continuous drain current based on maximum allowable junction temperature. 6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum. 7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.

CYStech Electronics Corp. Spec. No. : C745H8 Issued Date : 2017.08.16 Revised Date : 2017.08.21 Page No. : 3/ 11 MTE020N10RH8 CYStek Product Specification Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - V VGS=0V , ID=250μA ∆BVDSS/∆Tj - 0.08 - V/°C Reference to 25°C, ID=250μA VGS(th) 2 - 4 V VDS = VGS, ID=250μA *GFS - 10.6 - S VDS =10V , ID=20A IGSS - - ±100 nA VGS=±20V , VDS=0V - - 1 VDS =80V , VGS =0V IDSS - - 5 μA VDS =80V , VGS =0V , Tj=55°C *RDS(ON) - 20.4 29 mΩ VGS =10V , ID=20A Dynamic *Qg - 16.2 - *Qgs - 5.5 - *Qgd - 4.6 - nC VDS=80V , ID=20A, VGS=10V *td(ON) - 13.2 - *tr - 15.4 - *td(OFF) - 22.2 - *tf - 7.2 - ns VDS=50V , ID=20A, VGS=10V , RG=1Ω Ciss - 947 - Coss - 133 - Crss - 22 - pF VGS=0V , VDS=50V , f=1MHz Rg - 1.2 - Ω f=1MHz Source-Drain Diode *IS - - 28.5 *ISM - - 114 A *VSD - 0.7 1 V IS=1A, VGS=0V *trr - 23 - ns *Qrr - 17 - nC VGS=0, IF=1A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C745H8 Issued Date : 2017.08.16 Revised Date : 2017.08.21 Page No. : 4/ 11 MTE020N10RH8 CYStek Product Specification Recommended Soldering Footprint unit : mm

CYStech Electronics Corp. Spec. No. : C745H8 Issued Date : 2017.08.16 Revised Date : 2017.08.21 Page No. : 5/ 11 MTE020N10RH8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 012345 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V VGS=4.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 30 35 40 45 50 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 02468 1 0 1 2 1 4 1 6 1 8 2 0 Total Gate Charge---Qg(nC) VGS, Gate-Source Voltage(V) ID=20A VDS=20V VDS=80V VDS=50V

CYStech Electronics Corp. Spec. No. : C745H8 Issued Date : 2017.08.16 Revised Date : 2017.08.21 Page No. : 6/ 11 MTE020N10RH8 CYStek Product Specification Typical Characteristics(Cont.) Maximum Safe Operating Area 0.1 100 1000 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 100ms 10ms 100μs RDS(ON) Limited TC=25°C, Tj=175°C, VGS=10V, RθJC=3°C/W Single Pulse 1ms Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 200 T C, Case Temperature(°C) ID, Maximum Drain Current(A) VGS=10V, RθJC=3°C/W Typical Transfer Characteristics 0123456789 1 0 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Maximum Power Dissipation 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=175°C TC=25°C RθJC=3°C/W Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 02468 1 Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=20A Tj=25°C Tj=150°C

CYStech Electronics Corp. Spec. No. : C745H8 Issued Date : 2017.08.16 Revised Date : 2017.08.21 Page No. : 7/ 11 MTE020N10RH8 CYStek Product Specification Typical Characteristics(Cont.) Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=20A RDS( ON)@Tj=25°C :20.4mΩ typ. Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS(th), NormalizedThreshold Voltage ID=250μA ID=1mA Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse0.01 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=3 °C/W 0.0

CYStech Electronics Corp. Spec. No. : C745H8 Issued Date : 2017.08.16 Revised Date : 2017.08.21 Page No. : 8/ 11 MTE020N10RH8 CYStek Product Specification Recommended Soldering Footprint & Stencil Design unit : mm

CYStech Electronics Corp. Spec. No. : C745H8 Issued Date : 2017.08.16 Revised Date : 2017.08.21 Page No. : 9/ 11 MTE020N10RH8 CYStek Product Specification R Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C745H8 Issued Date : 2017.08.16 Revised Date : 2017.08.21 Page No. : 10/ 11 MTE020N10RH8 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) 217°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25 °C to peak temperature Note :1. All temperatures refer to topside of the package, measured on the package body surface. 2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools.

CYStech Electronics Corp. Spec. No. : C745H8 Issued Date : 2017.08.16 Revised Date : 2017.08.21 Page No. : 11/ 11 MTE020N10RH8 CYStek Product Specification DFN5×6 Dimension Marking: E020 N10R Device Name Date Code 8-Lead DFN5×6 Plastic Package 0.133 0.149 E 5.90 6.10 0.232 0.240 θ 8° 12° 8° 12° E1 5.70 5.80 0.224 0.228 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.