MTD1312 ONSEMI | Alldatasheet

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© Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2

1 Publication Order Number:

25 Amps, 30 Volts

N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

  • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode Is Characterized for Use In Bridge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 Vdc Drain−to−Gate Voltage (RGS = 1.0 MΩ) VDGR 30 Vdc Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 20 Vdc Vpk Operating and Storage Temperature Range TJ, Tstg −55 to 150 This document contains information on a new product. Specifications and information herein are subject to change without notice.

25 AMPERES

30 VOLTS

RDS(on) = 16 mΩ Device Package Shipping

ORDERING INFORMATION

MTD1312T4 DPAK 2500 Tape & Reel CASE 369A DPAK STYLE 2 PIN ASSIGNMENT http://onsemi.com N−Channel D S G MARKING DIAGRAM Y = Year WW = Work Week MTD1312 = Device Code YWW MTD 1312 1 2 Gate Source Drain Drain

http://onsemi.com POWER RATINGS (TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain Current − Continuous Drain Current − Single Pulse (tp ≤ 10 /C0109s) Mounted on heat sink TC = 25°C VGS = 10 Vdc Steady State ID IDM Adc Apk Continuous Source Current (Diode Conduction) IS 25 Adc Total Power Dissipation @ TA = 25°C PD 72 Watts Thermal Resistance − Junction−to−Case RθJC 1.72 °C/W Parameter Symbol Value Unit Drain Current − Continuous Drain Current − Single Pulse (tp ≤ 10 /C0109s) Mounted on minimum recommended FR−4 or G−10 board VGS = 10 Vdc Steady State ID IDM 6.0 Adc Apk Continuous Source Current (Diode Conduction) IS 1.1 Adc Total Power Dissipation @ TA = 25°C PD 1.0 Watts Thermal Resistance − Junction−to−Ambient RθJA 118 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Notes 1 & 3) (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 30 − (30) Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 1.0 (10) μAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − 500 nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (Notes 1 & 3) (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 1.4 (4.3) 2.0 Vdc mV/°C Static Drain−to−Source On−Resistance (Notes 1 & 3) (VGS = 10 Vdc, ID = 10 Adc) (VGS = 4.5 Vdc, ID = 5.0 Adc) RDS(on) m/C0087 Forward Transconductance (VDS = 5.0 Vdc, ID = 1.0 Adc) (Note 1) gFS − 5.4 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 1110 1540 pF Output Capacitance Coss − 490 690 Transfer Capacitance Crss − 150 210 1. Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. 3. Reflects typical values.

http://onsemi.com ELECTRICAL CHARACTERISTICS − (continued) (TC = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time (VDD = 24 Vdc, ID = 20 Adc, VGS = 10 Vdc, RG = 6.0 Ω) (Note 4) td(on) − 8.0 16 ns Rise Time tr − 45 90 Turn−Off Delay Time td(off) − 50 100 Fall Time tf − 90 180 Gate Charge (VDS = 15 Vdc, ID = 10 Adc, VGS = 10 Vdc) (Note 4) QT − 35 50 nC Q1 − 3.5 − Q2 − 10 − Q3 − − − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 10 Adc, VGS = 0 Vdc) (Note 4) (IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.81 (0.61) 1.0 Vdc Reverse Recovery Time (IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) (Note 4) trr − 40 − ns ta − 20 − tb − 20 − Reverse Recovery Stored Charge QRR − 0.04 − μC 4. Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. 6. Reflects typical values.

be charged by current from the generator. and Q2 and VGSP are read from the gate charge curve. on−state when calculating td(off). is difficult to measure and, consequently, is not specified. maintain a value of unity regardless of the switching speed. however, snubbing reduces switching losses. Figure 7. Capacitance Variation

subjected to a solder reflow process. Figure 15. Thermal Resistance versus Drain Pad

1.75 Watts

3.0 Watts

5.0 Watts

circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. Figure 16. Typical Stencil for DPAK and

  • Always preheat the device.
  • The delta temperature between the preheat and soldering should be 100°C or less.*
  • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.
  • The soldering temperature and time shall not exceed 260°C for more than 10 seconds.
  • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.
  • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.
  • Mechanical stress or shock should not be applied during cooling. * * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. * * Due to shadowing and the inability to set the wave height to incorporate other surface mount components, the D 2PAK is not recommended for wave soldering.

being used. This profile shows temperature versus time. degrees cooler than the adjacent solder joints.

40 TO 80 SECONDS

Figure 17. Typical Solder Heating Profile

http://onsemi.com PACKAGE DIMENSIONS STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN D A K B RV S F L G 2 PL M0.13 (0.005) T E C U J H −T− SEATING PLANE Z DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.235 0.250 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.033 0.040 0.84 1.01 F 0.037 0.047 0.94 1.19 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.175 0.215 4.45 5.46 S 0.020 0.050 0.51 1.27 V 0.030 0.050 0.77 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 12 3 DPAK CASE 369A−13 ISSUE AA ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 MTD1312/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative Thermal Clad is a registered trademark of the Bergquist Company.