MTD120C10H8 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 14

Technical content

Features

  • Simple drive requirement
  • Low on-resistance
  • Fast switching speed
  • Pb-free lead plating and halogen-free package Equivalent Circuit Outline

Ordering Information

MTD120C10H8-0-T6-G DFN 5 ×6 (Pb-free lead plating & halogen-free package) 3000 pcs / Tape & Reel MTD120C10H8 DFN5×6 G：Gate S：Source D：Drain N-CH P-CH BVDSS 100V -100V ID@VGS=10V(-10V), TA=25°C 2.7A -3.0A ID@VGS=10V(-10V), TC=25°C 7.8A -8.8A RDSON(typ)@VGS=10V(-10V) 128mΩ 114mΩ RDSON(typ)@VGS=4.5V(-4.5V) 135mΩ 133mΩ Pin 1 Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C986H8 Issued Date : 2016.10.14 Revised Date : Page No. : 2/14 MTD120C10H8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Limits Parameter Symbol N-channel P-channel Unit Drain-Source Breakdown V oltage BVDSS 100 -100 Gate-Source V oltage VGS ±20 ±20 V TA=70 °C, VGS=10V (-10V) IDSM 2.2 -2.4 Continuous Drain Current TC=100 °C, VGS=10V (-10V) ID 4.9 -5.6 Pulsed Drain Current (Note 1 & 2) IDM 25 -28 A TA=25 °C 2.5 (Note 3) TA=70 °C PDSM 1.6 (Note 3) TC=25 °C 21 Power Dissipation TC=100 °C PD 8.4 W Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 6 Thermal Resistance, Junction-to-ambient, max RθJA 50 (Note 3) °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad. N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - VGS=0V , ID=250μA VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V , VDS=0V - - 1 VDS=80V , VGS=0V IDSS - - 25 μA VDS=80V , VGS=0V , Tj=125°C - 128 165 ID=2A, VGS=10V *RDS(ON) - 135 175 mΩ ID=1.5A, VGS=4.5V *GFS - 5.5 - S VDS=10V , ID=2A Dynamic Ciss - 244 - Coss - 34 - Crss - 15 - pF VDS=30V , VGS=0V , f=1MHz *td(ON) - 4.2 - *tr - 16.4 - *td(OFF) - 19.4 - *tf - 16.6 - ns VDS=50V , ID=1A, VGS=10V , RG=6Ω

CYStech Electronics Corp. Spec. No. : C986H8 Issued Date : 2016.10.14 Revised Date : Page No. : 3/14 MTD120C10H8 CYStek Product Specification *Qg - 7 - *Qgs - 0.8 - *Qgd - 1.8 - nC VDS=80V , ID=2A, VGS=10V Body Diode *IS - - 2.7 *ISM - - 11 A *VSD - 0.79 1.2 V VGS=0V , IS=2A *trr - 17.7 - ns *Qrr - 14.7 - nC IF=2A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -100 - - VGS=0V , ID=-250μA VGS(th) -1.0 - -2.5 V VDS=VGS, ID=-250μA IGSS - - ±10 nA VGS=±20V , VDS=0V - - -1 VDS=-80V , VGS=0V IDSS - - -25 μA VDS=-80V , VGS=0V , Tj=125°C - 114 145 ID=-2A, VGS=-10V *RDS(ON) - 133 175 mΩ ID=-1.5A, VGS=-4.5V *GFS - 6.7 - S VDS=-10V , ID=-2A Dynamic Ciss - 774 - Coss - 76 - Crss - 39 - pF VDS=-30V , VGS=0V , f=1MHz *td(ON) - 6.8 - *tr - 17.4 - *td(OFF) - 56.8 - *tf - 32 - ns VDS=-50V , ID=-1A, VGS=-10V , RG=6Ω *Qg - 17.9 - *Qgs - 1.9 - *Qgd - 4.9 - nC VDS=-80V , ID=-2A, VGS=-10V Body Diode *IS - - -3 *ISM - - -12 A *VSD - -0.78 -1.2 V VGS=0V , IS=-2.5A *trr - 17.5 - ns *Qrr - 15.2 - nC IF=-2A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C986H8 Issued Date : 2016.10.14 Revised Date : Page No. : 4/14 MTD120C10H8 CYStek Product Specification Recommended Soldering Footprint unit : mm

CYStech Electronics Corp. Spec. No. : C986H8 Issued Date : 2016.10.14 Revised Date : Page No. : 5/14 MTD120C10H8 CYStek Product Specification Recommended Stencil Design Note : 1. Stencil thickness 5 mil (0.127mm) 2. May need to be adjusted to specific requirements.

CYStech Electronics Corp. Spec. No. : C986H8 Issued Date : 2016.10.14 Revised Date : Page No. : 6/14 MTD120C10H8 CYStek Product Specification Typical Characteristics : Q1( N-channel ) Typical Output Characteristics 0 4 8 12 16 20 V DS, Drain-Source Voltage(V) ID, Drain Current (A) 10V, 9V, 8V, 7V, 6V, 5V VGS=2.5V 3.5V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 220 240 260 280 300 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) VGS=10V, ID=2A RDSON@Tj=25°C : 128mΩtyp. ID=2A VGS=4.5V, ID=1.5A RDSON@Tj=25°C : 135mΩ typ.

CYStech Electronics Corp. Spec. No. : C986H8 Issued Date : 2016.10.14 Revised Date : Page No. : 7/14 MTD120C10H8 CYStek Product Specification Typical Characteristics(Cont.) : Q1( N-channel) Capacitance vs Drain-to-Source Voltage 100 1000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold VoltageID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 02468 1 0 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=2A VDS=80V Maximum Safe Operating Area 0.001 0.01 0.1 100 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TA=25°C, Tj=150°C VGS=10V, RθJA=50°C/W Single Pulse DC 100ms RDSON Limited 100μs 10ms 1ms Maximum Drain Current vs Case Temperature 0.5 1.5 2.5 3.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C VGS=10V RθJA=50°C/W

CYStech Electronics Corp. Spec. No. : C986H8 Issued Date : 2016.10.14 Revised Date : Page No. : 8/14 MTD120C10H8 CYStek Product Specification Typical Characteristics(Cont.) : Q1( N-channel) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=50°C/W Typical Transfer Characteristics 012345 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal ResistanceSingle Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W

CYStech Electronics Corp. Spec. No. : C986H8 Issued Date : 2016.10.14 Revised Date : Page No. : 9/14 MTD120C10H8 CYStek Product Specification Typical Characteristics : Q2( P-channel) Typical Output Characteristics 02468 1 0 Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) 10V,9V,8V,7V,6V, 5V, -VGS=3V -ID=250μA, V =0VGS Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) -VGS=4.5V -VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 0 -IDR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 140 180 220 260 300 340 380 420 02468 1 GS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) VGS=0V Tj=25°C Tj=150°C -ID=2A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance -VGS=10V, -ID=2A RDSON@Tj=25°C : 114 mΩ typ. VGS=-4.5V, ID=-1.5A RDSON@Tj=25°C : 133mΩ typ.

CYStech Electronics Corp. Spec. No. : C986H8 Issued Date : 2016.10.14 Revised Date : Page No. : 10/14 MTD120C10H8 CYStek Product Specification Typical Characteristics(Cont.) : Q2(P-channel) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 30 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage -ID=250μA -ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) -VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 4 8 12 16 20 24 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-2A VDS=-80V Maximum Safe Operating Area 0.001 0.01 0.1 100 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) TA=25°C, Tj=150°C VGS=10V, RθJA=50°C/W Single Pulse DC RDSON Limited 100μs 1ms 10ms 100ms Maximum Drain Current vs Case Temperature 0.5 1.5 2.5 3.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A) TA=25°C -VGS=10V RθJA=50°C/W

CYStech Electronics Corp. Spec. No. : C986H8 Issued Date : 2016.10.14 Revised Date : Page No. : 11/14 MTD120C10H8 CYStek Product Specification Typical Characteristics(Cont.) : Q2(P-channel) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=50°C/W Typical Transfer Characteristics 012345 -VGS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-10V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W

CYStech Electronics Corp. Spec. No. : C986H8 Issued Date : 2016.10.14 Revised Date : Page No. : 12/14 MTD120C10H8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C986H8 Issued Date : 2016.10.14 Revised Date : Page No. : 13/14 MTD120C10H8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C986H8 Issued Date : 2016.10.14 Revised Date : Page No. : 14/14 MTD120C10H8 CYStek Product Specification DFN5×6 Dimension F 1.60 REF 0.063 REF K 1.60 REF 0.063 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: Date Code D120Device ame N 8-Lead DFN5×6 Plastic Package C10