MTD10N10EL ONSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Avalanche Energy Specified
  • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Surface Mount Package Available in 16 mm, 13−inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 Vdc Drain−to−Gate Voltage (RGS = 1.0 MΩ ) VDGR 100 Vdc Gate−to−Source Voltage — Continuous — Non−Repetitive (tp ≤ 10 ms) VGS VGSM ±15 ±20 Vdc Vpk Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (t p ≤ 10 µs) ID ID IDM 6.0 Adc Apk Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 2) PD 40 0.32 1.75 Watts W/°C Watts Operating and Storage Temperature RangeTJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 10 Apk, L = 1.0 mH, RG =25 Ω ) EAS mJ Thermal Resistance — Junction to Case — Junction to Ambient (Note 1) — Junction to Ambient (Note 2) R θJC R θJA R θJA 3.13 100 71.4 °C/W Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C 1. When surface mounted to an FR4 board using minimum recommended pad size. 2. When surface mounted to an FR4 board using 0.5 sq in pad size. http://onsemi.com MARKING DIAGRAM & PIN ASSIGNMENTS 10N10EL=Device Code Y = Year WW = Work Week D S G VDSS R DS(ON) TYP ID MAX 100 V 0.22 Ω 10 A N−Channel Gate Source Drain Drain Device Package Shipping †

ORDERING INFORMATION

MTD10N10EL DPAK 75 Units/Rail DPAK CASE 369C (Surface Mount) Style 2 MTD10N10ELT4 DPAK 2500 Tape & Reel 1 2 YWW 10N 10EL †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

http://onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 100 115 Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 100 Vdc, VGS = 0 Vdc) (VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 100 µAdc Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 1.45 4.0 2.0 Vdc mV/°C Static Drain−to−Source On−Resistance (VGS = 5.0 Vdc, ID = 5.0 Adc) R DS(on) — 0.17 0.22 Ohm Drain−to−Source On−Voltage (VGS = 5.0 Vdc, ID = 10 Adc) (VGS = 5.0 Vdc, ID = 5.0 Adc, TJ = 125°C) VDS(on) 1.85 2.6 2.3 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) gFS 2.5 7.9 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0V d C iss — 741 1040 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss — 175 250 Reverse Transfer Capacitance f = 1.0 MHz) C rss — 18.9 40 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(on) — 11 20 ns Rise Time (VDD = 50 Vdc, ID = 10 Adc, VGS =50V d c tr — 74 150 Turn−Off Delay Time VGS = 5.0 Vdc, R G = 9.1 Ω ) td(off) — 17 30 Fall Time R G 9.1 Ω ) tf — 38 80 Gate Charge (S Fi 8) Q T — 9.3 15 nC (See Figure 8) (VDS = 80 Vdc, ID = 10 Adc, Q 1 — 2.56 —(VDS 80 Vdc, ID 10 Adc, VGS = 5.0 Vdc) Q 2 — 4.4 — Q 3 — 4.66 — SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 3) (IS = 10 Adc, VGS = 0 Vdc) (IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.98 0.898 1.6 Vdc Reverse Recovery Time (S Fi 14) trr — 124.7 — ns (See Figure 14) (IS = 10 Adc, VGS = 0 Vdc, ta — 86 —(IS 10 Adc, VGS 0 Vdc, dIS/dt = 100 A/µs) tb — 38.7 — Reverse Recovery Stored Charge Q RR — 0.539 — µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD — 4.5 — nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS — 7.5 — nH 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature.

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage

5 VTJ = 25°C

be charged by current from the generator. and Q2 and VGSP are read from the gate charge curve. on−state when calculating td(off). is difficult to measure and, consequently, is not specified. maintain a value of unity regardless of the switching speed. however, snubbing reduces switching losses. Figure 7. Capacitance Variation

http://onsemi.com PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O D A K B RV S F L G 2 PL M0.13 (0.005) T E C U J H −T− SEATING PLANE Z DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 123 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inchesSCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT*

http://onsemi.com ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone : 81−3−5773−3850 MTD10N10EL/D E−FET is a trademark of Semiconductor Components Industries, LLC. LITERATURE FULFILLMENT : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.