MTD10N05E MOTOROLA | Alldatasheet

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MOTOROLA SC (XSTPS/R F) bBE D MM 6367254 0098524 555 MENOTL MOTOROLA @ SEMICONDUCTOR TECHNICAL DATA . p Designer's Data Sheet MTD10NOS5E TMOS IV Motorola Preferred Device Power Field Effect Transistor N-Channel Enhancement-Mode Tmos POWER | FETs DPAK for Surface Mount or Insertion Mount Rpsion) = 0-1 OHM

50 VOLTS

This advanced “E” series of TMOS power MOSFETs is . designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain-to-source diodes with fast recovery times. Designed for low voltage, high speed switching applica- tions in power supplies, converters and PWM motor con- trols, these devices are particularly well suited for bridge @ circuits where diode speed and commutating safe operat- TMOS og ing area are critical, and offer additional safety margin —— against unexpected voltage transients. CASE seout0 © Internat Source-to-Drain Diode Designed to Replace _ o MTD1ONOSE External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode — Unclamped Inductive Switching (UIS) Energy Capability Specified at 100°C. © Commutating Safe Operating Area (CSOA) Specified for ¢ Zz Use in Half and Full Bridge Circuits. C © Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode. s CASE 369-06 © Diode is Characterized for Use in Bridge Circuits. wee 1 © Available With Long Leads, Add -1 Suffix JONOBE' MAXIMUM RATINGS (T) = 25°C unless otherwise noted) Drain-Gate Voltage (Res = 1 MO) [voor [8 | vie | Gate-Source Voltage — Continuous Ves +20 Vde — Non-repetitive (tp < 50 ys) VGsm +40 Vpk Drain Current — Continuous 10 — Pulsed 24 Total Power Dissipation @ Tc = 25°C 20 Watts Derate above 25°C 0.16 wre Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Rec 6.25 "cw — Junction to Ambient Raa 100 — Junction to Ambient (1) 71.4 Maximum Device Temperature for Soldering Th °C Purposes (for § seconds maximum) {1 These raungs are applicable when aurface mounted onthe minmurm pad sae recommended (continued) Designer's Data for “Worst Case” Conditions — The Designer's Data Sheet permits the design of most circurts entirely from the information presented. Preferred device is a Motorola recommended choice for future use and best overall value. MOTOROLA TMOS POWER MOSFET DATA 3-130

MOTOROLA SC (XSTRS/R F) bBE D MM 6367254 0098525 491 MEMOTL MTD10NO5E ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) OFF CHARACTERISTICS Drain-Source Breakdown Voltage ViBRiDSs Vde (es = 0, Ip = 025 ma) t Zero Gate Voltage Drain Current loss BA (ps = Rated Vpgs, Ves = 0) 10 (Vpg = Rated Voss. Ves = 0, Ty = 125°C) °c) 100 Gate-Body Leakage Current, Forward (V@gF = 20 Vde, Vpg = 0 | tcsse | — | 100 | nade | Gate-Body Leakage Current, Reverse (Vggp = 20 Vdc, Vps - 0) icssp_| — | 100 | made | ON CHARACTERISTICS* Gate Threshold Voltage Vesith) Vde ps = VGs; Ip = 1 mA) 2 45 | Ty = 100°C 15 4 Static Drain-Source On-Resistance (Vgg = 10 Vdc, Ip = 5 Adc} Rosion) - 01 Ohm Drain-Source On-Voltage (Vgg = 10 V) Vpsion) Vde (ip = 10 Ade) - W lip = 5 Ade, Ty = 100°C) - 09 Forward Transconductance (Vpg = 15 V, Ip = 5A) Fs 45 = mhos DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS Unclamped Drain-to-Source Avalanche Energy See Figures 16 and 17 | Wpspr md (Ip = 24, Vpp = 6 V, Tc ~ 25°C, Single Pulse, Non-repetitive) {= 5 | (lp = 104, Vpp = 6, Tc = 25°C, PW <= 10 ws, Duty Cycle = 1%) foo 6 | lip = 44, Vpp = 6 V, Tc = 100°C, PW = 10 us, Duty Cycle < 1%) - 25 DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance See Figure 14 | Ces | — | wo | SWITCHING CHARACTERISTICS* (T) = 100°C) { Turn-On Delay Time = 30 ns Rise Time (Vpp = 25 V, Ip = 05 Rated Ip tr = 90 i Rgen = 50 ohms) — - Turn-Off Delay Time See Figure 18 talotf) - | 4 rai Total Gate Charge | pg = 08 Rated Voss. | Qg | 14 (Typ) v7 nc Gate-Source Charge Ip = Rated ip, Vag = 10V) | Ogg | 7 (Typ) = | Gate-Drain Charge See Figure 15 [Qa | 7(Typ) | =— SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage (lem = 05 Rated Ip, Vso | 1 (Typ) 2 Vde Forward Turn-On Time digidt = 100 Aus, Vgg = 0 ton | __ Limited by stray inductance Reverse Recovery Time ‘rr 50 (Typ) = ns “Pulse Test Pulse Width = 300 us, Duty Cycle = 2%. MOTOROLA TMOS POWER MOSFET DATA 3-131

Figure 1. Power Derating Figure 2. On-Region Characteristics

2 NS | t ee es 2 [|

2 B 02

0 Qo 50 100 150 200 oO 3 6 9 12 15

Figure 5. Breakdown Voltage Variation Figure 6. On-Resistance versus Drain Current

2 PTTL Oe EN

Figure 7. On-Resistance Variation Figure 8. Maximum Rated Forward Biased Figure 10. Thermal Response