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Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package Symbol Outline
Ordering Information
(Pb-free lead plating and halogen-free package) 80 pcs/tube, 100 tubes/box TO-251 MTB090N06I3 G：Gate D：Drain S：Source G D S Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec,UJ : 80 pcs / tube, 100 tubes/box Product rank, zero for no rank products Product name BVDSS 60V ID@VGS=10V 5A RDSON(TYP) VGS=10V , ID=3A 70mΩ VGS=4.5V , ID=2A 82mΩ
CYStech Electronics Corp. Spec. No. : C420I3 Issued Date : 2014.07.11 Revised Date : Page No. : 2/8 MTB090N06I3 CYStek Product Specification Absolute Maximum Ratings (TC=25C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage V DS 60 V Gate-Source V oltage V GS ±20 Continuous Drain Current @ VGS=10V , TC=25C (Note 1) ID A Continuous Drain Current @ VGS=10V , TC=100C (Note 1) 11 Continuous Drain Current @ VGS=10V , TA=25C (Note 2) 5 Continuous Drain Current @ VGS=10V , TA=70C (Note 2) 4 Pulsed Drain Current (Note 3) IDM 30 Total Power Dissipation @TC=25℃ (Note 1) PD 25 W Total Power Dissipation @TC=100℃ (Note 1) 12.5 Total Power Dissipation @TA=25℃ (Note 2) PDSM 2.5 Total Power Dissipation @TA=70℃ (Note 2) 1.6 Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max R th,j-c 6 C/W Thermal Resistance, Junction-to-ambient, max (Note 2) RθJA 50 C/W Thermal Resistance, Junction-to-ambient, max (Note 4) RθJA 110 C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. 5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
CYStech Electronics Corp. Spec. No. : C420I3 Issued Date : 2014.07.11 Revised Date : Page No. : 3/8 MTB090N06I3 CYStek Product Specification Characteristics (TC=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 60 - - V VGS=0V , ID=250μA, Tj=25℃ ∆BVDSS/∆Tj - 0.07 - V/C Reference to 25 C, ID=250μA VGS(th) 1.0 1.6 2.2 V V DS = VGS, ID=250μA *GFS - 2.2 - S V DS =15V , ID=1A IGSS - - ±100 nA VGS=±20V IDSS - - 1 μA VDS =60V , VGS =0V - - 10 VDS =48V , VGS =0V , Tj=125C *RDS(ON) - 70 90 mΩ VGS =10V , ID=3A - 82 110 V GS =4.5V , ID=2A Dynamic *Qg - 8.6 - nC I D=5A, VDD=30V , VGS=10V *Qgs - 2.1 - *Qgd - 2.7 - *td(ON) - 3 - ns VDD=30V , ID=1A, VGS=10V , RG=6Ω *tr - 17 - *td(OFF) - 13 - *tf - 12 - Ciss - 511 - pF V GS=0V , VDS=25V , f=1MHz Coss - 22 - Crss - 19 - Source-Drain Diode *IS - - 5 A *ISM - - 30 *VSD - 0.86 1.2 V I S=5A, VGS=0V *trr - 9 - ns VGS=0, IF=5A, dI/dt=100A/μs *Qrr - 5 - nC *Pulse Test : Pulse Width 300μs, Duty Cycle2%
CYStech Electronics Corp. Spec. No. : C420I3 Issued Date : 2014.07.11 Revised Date : Page No. : 4/8 MTB090N06I3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0123456789 1 0VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V,9V,8V,7V,6V,5V VGS=2.5V 3.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS = 3V 4.5V 10V VGS=2.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 0 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 160 200 240 02468 1 0 VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=3A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=3A RDSON@Tj=25°C : 70mΩ typ.
CYStech Electronics Corp. Spec. No. : C420I3 Issued Date : 2014.07.11 Revised Date : Page No. : 5/8 MTB090N06I3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=15V Pulsed Ta=25°C Gate Charge Characteristics 02468 1 0 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=5A VDS=48V VDS=30V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 100ms 10ms 100μs RDS(ON) Limit TA=25°C, Tj=150°, VGS=10V RθJA=50°C/W, Single Pulse 1ms Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)TA=25°C, Tj=150°C, VGS=10V, RθJA=50°C/W
CYStech Electronics Corp. Spec. No. : C420I3 Issued Date : 2014.07.11 Revised Date : Page No. : 6/8 MTB090N06I3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 012345 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 150 200 250 300 350 400 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=50°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W
CYStech Electronics Corp. Spec. No. : C420I3 Issued Date : 2014.07.11 Revised Date : Page No. : 7/8 MTB090N06I3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3 C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStech Electronics Corp. Spec. No. : C420I3 Issued Date : 2014.07.11 Revised Date : Page No. : 8/8 MTB090N06I3 CYStek Product Specification TO-251 Dimension DIM Inches Millimeters DIM Inches Millimeters Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead: Pure tin plated Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-251 Plastic Package CYStek Package Code: I3 Marking: B090 N06 □□□□ Product Name Date Code