MTB06N03Q8_16 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • Single Drive Requirement
  • Low On-resistance
  • Fast Switching Characteristic
  • Repetitive Avalanche Rated
  • Pb-free lead plating package Symbol Outline MTB06N03Q8 SOP-8 Pin 1 G：Gate D：Drain S：Source

Ordering Information

SOP-8 MTB06N03Q8-0-T3-G (Pb-free lead plating and halogen-free package) 2500 pcs/ Tape & Reel RDSON@VGS=10V , ID=18A 4.6mΩ(typ) RDSON@VGS=4.5V , ID=12A 6.5mΩ(typ) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C441Q8 Issued Date : 2009.05.07 Revised Date : 2016.04.07 Page No. : 2/9 MTB06N03Q8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 30 Gate-Source V oltage VGS ±20 V Continuous Drain Current @VGS=10V , TC=25°C 23 Continuous Drain Current @VGS=10V ,TC=100°C 14 Continuous Drain Current @VGS=10V ,TA=25°C 16 Continuous Drain Current @VGS=10V ,TA=100°C ID Pulsed Drain Current IDM 92 *1 Avalanche Current IAS 16 A Avalanche Energy @ L=0.1mH, ID=16A, RG=25Ω EAS 12.8 Repetitive Avalanche Energy @ L=0.05mH EAR 3 *2 mJ TA=25℃ 2.5 Total Power Dissipation TA=100℃ PD 1.5 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 25 Thermal Resistance, Junction-to-ambient, max Rth,j-a 50 *3 °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - VGS=0V , ID=250μA VGS(th) 1.0 - 3.0 V VDS = VGS, ID=250μA GFS *1 - 20 - S VDS =5V , ID=18A IGSS - - ±100 nA VGS=±20V - - 1 VDS =24V , VGS =0V IDSS - - 25 μA VDS =20V , VGS =0V , Tj=125°C - 4.6 6 VGS =10V , ID=18A RDS(ON) *1 - 6.5 8.5 mΩ VGS =4.5V , ID=12A Dynamic Ciss - 2796 - Coss - 308 - Crss - 268 - pF VGS=0V , VDS=15V , f=1MHz

CYStech Electronics Corp. Spec. No. : C441Q8 Issued Date : 2009.05.07 Revised Date : 2016.04.07 Page No. : 3/9 MTB06N03Q8 CYStek Product Specification Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Qgs *1, 2 - 8 - Qgd *1, 2 - 17 - nC VDS=15V , VGS=10V , ID=18A tr *1, 2 - 10 - td(OFF) *1, 2 - 65 - tf *1, 2 - 15 - ns VDS=15V , ID=1A, VGS=10V , RGS=2.7Ω Rg - 2.8 - Ω f=1MHz Source-Drain Diode IS *1 - - 4 ISM *3 - - 40 A VSD *1 - - 1.2 V IF=IS, VGS=0V trr - 28 - ns Qrr - 12 - nC IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C441Q8 Issued Date : 2009.05.07 Revised Date : 2016.04.07 Page No. : 4/9 MTB06N03Q8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 100 02468 1 0 V DS, Drain-Source Voltage(V) ID, Drain Current(A) 10V, 9V,8V,7V,6V,5V, 4V VGS=3V VGS=2V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 1.6 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=2.5V VGS=3V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=18A RDS(ON)@ Tj=25°C : 4.6 mΩ VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=18A

CYStech Electronics Corp. Spec. No. : C441Q8 Issued Date : 2009.05.07 Revised Date : 2016.04.07 Page No. : 5/9 MTB06N03Q8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 1 02 03 04 05 06 0 Total Gate Charge---Qg(nC) VGS, Gate-Source Voltage(V) VDS=15V ID=18A Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs RDS(ON) Limit TA=25°C, Tj(max)=150°C, VGS=10V, RθJA=125°C/W Single Pulse Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 T C, Case Temperature(°C) ID, Maximum Drain Current(A)

CYStech Electronics Corp. Spec. No. : C441Q8 Issued Date : 2009.05.07 Revised Date : 2016.04.07 Page No. : 6/9 MTB06N03Q8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 100 02468 1 0 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Maximum Power Dissipation 100 150 200 250 300 350 400 450 500 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Peak Transient Power (W) TJ(MAX)=150°C TA=25°C θJA=125°C/W Transient Thermal Response Curves 0.0001 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=125 °C/W

CYStech Electronics Corp. Spec. No. : C441Q8 Issued Date : 2009.05.07 Revised Date : 2016.04.07 Page No. : 7/9 MTB06N03Q8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C441Q8 Issued Date : 2009.05.07 Revised Date : 2016.04.07 Page No. : 8/9 MTB06N03Q8 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) 217°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C441Q8 Issued Date : 2009.05.07 Revised Date : 2016.04.07 Page No. : 9/9 MTB06N03Q8 CYStek Product Specification SOP-8 Dimension *: Typical Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. Marking: 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Top View A B Front View F C D E G Part A I H J K O M L N Right side View Part A Date Code Device Name B06 N03 DIM Min. Max. Min. Max. H 0.1889 0.2007 4.80 5.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.