MTB04N03AQ8 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Single Drive Requirement
  • Low On-resistance
  • Fast Switching Characteristic
  • Dynamic dv/dt rating
  • Repetitive Avalanche Rated
  • Pb-free lead plating and halogen-free package Symbol Outline MTB04N03AQ8 SOP-8 Pin 1 G：Gate D：Drain S：Source

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs / tape & reel MTB04N03AQ8-0-T3-G Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 2/9 MTB04N03AQ8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 30 Gate-Source V oltage VGS ±20 V Continuous Drain Current @ TC=25°C, VGS=10V 20 Continuous Drain Current @ TC=100°C, VGS=10V ID 12.6 Continuous Drain Current @ TA=25°C, VGS=10V 14 Continuous Drain Current @ TA=70°C, VGS=10V IDSM 11 Pulsed Drain Current IDM 100 *1 Avalanche Current IAS 20 A Avalanche Energy @ L=2mH, ID=20A, VDD=25V EAS 400 *2 mJ TC=25℃ 5 TC=100℃ PD 2 TA=25℃ 2.5 *3 Total Power Dissipation TA=70℃ PDSM 1.6 *3 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 25 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 50 *3 °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - V VGS=0, ID=250μA VGS(th) 1.0 2.0 2.5 V VDS = VGS, ID=250μA GFS *1 - 37 - S VDS =5V , ID=18A IGSS - - ±100 nA VGS=±20 - - 1 VDS =30V , VGS =0 IDSS - - 25 μA VDS =30V , VGS =0, Tj=125°C - 4.4 6 mΩ VGS =10V , ID=18A RDS(ON) *1 - 5.8 8 mΩ VGS =4.5V , ID=12A Dynamic Ciss - 2394 - Coss - 494 - Crss - 281 - pF VGS=0V , VDS=15V , f=1MHz

CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 3/9 MTB04N03AQ8 CYStek Product Specification Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Qgs *1, 2 - 8 - Qgd *1, 2 - 13 - nC VDS=15V , VGS=10V , ID=18A tr *1, 2 - 12 - td(OFF) *1, 2 - 43 - tf *1, 2 - 17 - ns VDS=15V , ID=1A, VGS=10V , RGS=2.7Ω Rg - 1.5 - Ω VGS=15mV , VDS=0V , f=1MHz Source-Drain Diode IS *1 - - 10 ISM *3 - - 40 A VSD *1 - 0.81 1.2 V IS=18A, VGS=0V trr - 36 - ns Qrr - 16 - nC IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature.

CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 4/9 MTB04N03AQ8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 100 120 140 160 02468 1 0 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V, 9V, 8V, 7V, 6V, 5V VGS=4V VGS=3V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=3V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=18A RDSON@Tj=25°C : 4.4mΩ typ. VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=18A

CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 5/9 MTB04N03AQ8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=5V Pulsed Ta=25°C Gate Charge Characteristics 0 1 02 03 04 05 06 0 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=15V ID=18A Maximum Safe Operating Area 0.01 0.1 100 1000 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100m 1ms 100μs 10μs RDS(ON Limit TA=25°C, Tj=150°C VGS=10V, RθJA=50°C/W Single Pulse Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A) VGS=10V, RθJC=25°C/W

CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 6/9 MTB04N03AQ8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 100 012345 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C θJA=50°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W

CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 7/9 MTB04N03AQ8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 8/9 MTB04N03AQ8 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 9/9 MTB04N03AQ8 CYStek Product Specification SOP-8 Dimension Millimeters Inches Millimeters Inches Marking: 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Date Code Device Name B04 N03A c 0.170 0.250 0.006 θ 0 8° 0 8° 0.010 D 4.700 5.100 0.185 0.200 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.