MTB020N03V8 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Low Gate Charge
  • Simple Drive Requirement
  • Pb-free lead plating package Equivalent Circuit Outline

Ordering Information

MTB020N03V8-0-T6-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel DFN3×3 MTB020N03V8 G：Gate D：Drain S：Source Pin 1 Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C737V8 Issued Date : 2017.03.06 Revised Date : Page No. : 2/9 MTB020N03V8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS 30 Gate-Source V oltage VGS ±20 V Continuous Drain Current @ VGS=10V , TC=25°C 18 Continuous Drain Current @ VGS=10V , TC=100°C 11.4 Continuous Drain Current @ VGS=10V , TA=25°C 10 Continuous Drain Current @ VGS=10V , TA=70°C ID Pulsed Drain Current *1 IDM 72 Single Pulse Avalanche Current IAS 18 A Single Pulse Avalanche Current @ L=0.1mH, VGS=10V , VDD=15V *2 EAS 16.2 mJ Total Power Dissipation @TC=25℃ 8 Total Power Dissipation @TA=25℃ PD 2.5 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Note : *1. Pulse width limited by maximum junction temperature *2. 100% tested by conditions of L=0.1mH, IAS=6A, VGS=10V, VDD=15V Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 16 Thermal Resistance, Junction-to-ambient, max RθJA 50 * °C/W * Surface mounted on a 1 in² pad of 2oz copper. Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - V VGS=0V , ID=250μA ΔBVDSS/ΔTj - 0.02 - V/℃ Reference to 25 , I℃ D=1mA VGS(th) 1 - 2.5 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V , VDS=0V - - 1 VDS=24V , VGS=0V IDSS - - 25 μA VDS=24V , VGS=0V , Tj=125℃ - 14 18 ID=10A, VGS=10V *RDS(ON) - 17.5 25 mΩ ID=8A, VGS=4.5V *GFS - 3.8 - S VDS=10V , ID=1A Dynamic Ciss - 492 - Coss - 67 - Crss - 49 - pF VDS=25V , VGS=0V , f=1MHz td(ON) - 5.8 - tr - 16.6 - td(OFF) - 31.2 - tf - 7.6 - ns VDS=15V , ID=1A, VGS=10V , RG=6Ω

CYStech Electronics Corp. Spec. No. : C737V8 Issued Date : 2017.03.06 Revised Date : Page No. : 3/9 MTB020N03V8 CYStek Product Specification Symbol Min. Typ. Max. Unit Test Conditions Qg - 12.6 - Qgs - 1.8 - Qgd - 2.7 - nC VDS=15V , ID=10A, VGS=10V Source Drain Diode *IS - - 4 *ISM - - 16 A *VSD - 0.79 1.2 V IS=2.3A,VGS=0V *Trr - 7.4 - ns Qrr - 3 - nC IF=4A,VGS=0V , dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint unit : mm

CYStech Electronics Corp. Spec. No. : C737V8 Issued Date : 2017.03.06 Revised Date : Page No. : 4/9 MTB020N03V8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 01234 Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10V,9V,8V,7V,6V,5V,4V 3.5V VGS=2.5V Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=10VVGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 0 Tj=25°C Tj=150°C VGS=0V Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=4.5V, ID=8A RDSON@Tj=25°C : 17.5mΩ typ. VGS=10V, ID=10A RDSON@Tj=25°C : 14mΩ typ. VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=8A ID=10A

CYStech Electronics Corp. Spec. No. : C737V8 Issued Date : 2017.03.06 Revised Date : Page No. : 5/9 MTB020N03V8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=10V VDS=15V Gate Charge Characteristics 02468 1 0 1 2 1 4 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=10A VDS=15V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TC=25°C, Tj=150°C VGS=10V, RθJC=16°C/W Single Pulse DC 100ms RDSON Limited 100μs 1ms 10ms Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 T C, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=16°C/W

CYStech Electronics Corp. Spec. No. : C737V8 Issued Date : 2017.03.06 Revised Date : Page No. : 6/9 MTB020N03V8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 012345 V GS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Single Pulse Power Rating, Junction to Case 100 150 200 250 300 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TC=25°C RθJC=16°C/W Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=16°C/W

CYStech Electronics Corp. Spec. No. : C737V8 Issued Date : 2017.03.06 Revised Date : Page No. : 7/9 MTB020N03V8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C737V8 Issued Date : 2017.03.06 Revised Date : Page No. : 8/9 MTB020N03V8 CYStek Product Specification Recommended wave soldering condition Peak Temperature Soldering Time Product Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25 °C to peak temperature Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C737V8 Issued Date : 2017.03.06 Revised Date : Page No. : 9/9 MTB020N03V8 CYStek Product Specification DFN3×3 Dimension *: Typical Millimeters Inches Millimeters Inches DIM Min. Max. Min. Max. Marking: 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 Date Code S S S G D D D D B020 N03 DIM Min. Max. Min. Max. E2 1.535 1.935 0.060 0.076 θ 9° 13° 9° 13° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.