MTB020N03KJ3 CYSTEKEC | Alldatasheet
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Low Gate Charge Simple Drive Requirement ESD Protected Gate Pb-free lead plating and halogen-free package Equivalent Circuit Outline
Ordering Information
MTB020N03KJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel MTB020N03KJ3 TO-252(DPAK) G：Gate D：Drain S：Source BVDSS 30V ID@VGS=10V , TC=25°C 30A ID@VGS=10V , TA=25°C 9A RDSON(TYP) VGS=10V , ID=20A 13mΩ VGS=4.5V , ID=10A 18mΩ VGS=4V , ID=10A 21mΩ G D S Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name
CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 2/9 MTB020N03KJ3 CYStek Product Specification Absolute Maximum Ratings (TC=25C) Parameter Symbol Limits Unit Drain-Source V oltage (Note 1) VDS 30 V Gate-Source V oltage VGS ±20 Continuous Drain Current @TC=25C, VGS=10V (Note 1) ID 30 A Continuous Drain Current @TC=100C, VGS=10V (Note 1) 19 Continuous Drain Current @TA=25C, VGS=10V (Note 2) IDSM 9 Continuous Drain Current @TA=100C, VGS=10V (Note 2) 5.7 Pulsed Drain Current @ VGS=10V (Note 3) IDM 100 Single Pulse Avalanche Current @ L=0.1mH IAS 21 Single Pulse Avalanche Energy @ L=5mH, ID=6A, VDD=15V (Note 4) EAS 90 mJ Power Dissipation TC=25C (Note 1) PD 50 W TC=100C (Note 1) 20 TA=25C (Note 2) PDSM 2.5 TA=100C (Note 2) 1.0 Operating Junction and Storage Temperature Tj, Tstg -55~+150 C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2.5 C/W Thermal Resistance, Junction-to-ambient, max (Note 2) RθJA 50 Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. 3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by conditions of L=100μH, IAS=10A, VGS=10V , VDD=15V
CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 3/9 MTB020N03KJ3 CYStek Product Specification Characteristics (Tc=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - V VGS=0V, ID=250μA VGS(th) 1 - 2.5 VDS =VGS, ID=250μA IGSS - - ±10 μA VGS=±16V , VDS=0V IDSS - - 1 VDS =30V , VGS =0V - - 25 VDS =30V , VGS =0V , TJ=70C RDS(ON) *1 - 13 17 mΩ VGS =10V, ID=20A - 18 24 VGS =4.5V, ID=10A - 21 28 VGS =4V, ID=10A GFS *1 - 3.5 - S VDS =10V, ID=3A Dynamic Qg *1, 2 - 12 - nC VDS=15V , ID=20A, VGS=10V Qgs *1, 2 - 2.2 - Qgd *1, 2 - 3.4 - ns VDS=15V , ID=1A, VGS=10V , RG=6Ω tr *1, 2 - 17.2 - tf *1, 2 - 10.8 - Ciss - 440 - pF VGS=0V , VDS=25V, f=1MHz Coss - 61.7 - Crss - 46 - Source-Drain Diode VSD *1 - 0.91 1.2 V IS=15A, VGS=0V trr - 5.6 - ns IF=20A, dIF/dt=100A/μs Qrr - 1.7 - nC Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint
CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 4/9 MTB020N03KJ3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 2 3 4 5 6 7 8 9 10 VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10V,9V,8V,7V,6V VGS=3.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=4V VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 2 4 6 8 10 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 160 200 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=20A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=20A RDS(ON)@Tj=25°C : 13mΩtyp.
CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 5/9 MTB020N03KJ3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=10V VDS=15V Gate Charge Characteristics 0 2 4 6 8 10 12 14 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=15V ID=20A Maximum Safe Operating Area 0.1 100 1000 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TC=25°C, Tj=150°C VGS=10V, RθJC=2.5°C/W Single Pulse DC 100m s RDSON Limited 100μs 1ms 10ms Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=2.5°C/W
CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 6/9 MTB020N03KJ3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Single Pulse Power Rating, Junction to Case 300 600 900 1200 1500 1800 2100 2400 2700 3000 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TC=25°C RθJC=2.5°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5° C/W
CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 7/9 MTB020N03KJ3 CYStek Product Specification Reel Dimension Carrier Tape Dimension
CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 8/9 MTB020N03KJ3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 9/9 MTB020N03KJ3 CYStek Product Specification TO-252 Dimension DIM Inches Millimeters DIM Inches Millimeters Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead : Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Device Name Date Code B020 N03K □□□□ 1 2 3