MTB010N06RQ8 CYSTEKEC | Alldatasheet
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Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-free & Halogen-free package Symbol Outline
Ordering Information
MTB010N0 6R Q8 -0-T3-G SOP -8 (RoHS compliant & Halogen-free package) 2500 pcs / Tape & Reel MTB010N06RQ8 SOP-8 G ：Gate D：Drain S：Source Pin 1 BV DSS 60V ID @ T A =25ƱC, VGS =10V 10A R DS(ON) @V GS =10V , ID =10A 11.3 mΩ(typ) R DS(ON) @V GS =4.5V , ID =8A 17.9mΩ(typ) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name S S S G D D D D
CYStech Electronics Corp. Spec. No. : C016Q8 Issued Date : 2018.08.21 Revised Date : Page No. : 2/9 MTB010N06RQ8 CYStek Product Specification Absolute Maximum Ratings (Tc=25C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage V DS 60 V Gate-Source V oltage V GS ±20 Continuous Drain Current @ TA =25C, VGS =10V ID 10 A Continuous Drain Current @ TA =70C, VGS =10V 8 Pulsed Drain Current IDM 40 *1 Avalanche Current @ L=0.1mH IAS 30 Avalanche Energy @ L=1mH, ID =12A, VDD =30V EAS 72 *3 mJ Repetitive Avalanche Energy @ L=0.05mH EAR 1.6 *2 Total Power Dissipation TA =25 C PD 3.1 W TA =70 C 2 Operating Junction and Storage Temperature Tj, Tstg -55~+150 C Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% *3. 100% tested by conditions of L=0.1mH, IAS =15A, VGS =10V , VDD =25V Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case R θJC 20 C /W Thermal Resistance, Junction-to-ambient (Note) R θJA 40 Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad. Characteristics (TC=25 C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BV DSS 60 - - V V GS =0V , ID =250μA V GS(th) 1 - 2.5 V DS = VGS , ID =250μA G FS - 12.7 - S V DS =10V , ID =10A IGSS - - Ʋ100 nA V GS =Ʋ20V , VDS =0V IDSS - - 1 μA V DS =48V , VGS =0V - - 25 V DS =48V , VGS =0V , Tj=125C *R DS (ON ) - 11.3 15.5 m Ω V GS =10V , ID =10A - 17.9 26.5 V GS =4.5V , ID =8A Dynamic Qg *1, 2 - 25.9 - nC V DS =30V , VGS =10V , ID =10A Qgs *1, 2 - 5.1 - Qgd *1, 2 - 4.6 - Ciss - 1557 - pF V DS =30V , VGS =0V , f=1MHz Coss - 179 - Crss - 27 -
CYStech Electronics Corp. Spec. No. : C016Q8 Issued Date : 2018.08.21 Revised Date : Page No. : 3/9 MTB010N06RQ8 CYStek Product Specification Characteristics (Cont. TC=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Dynamic ns V DS =30V , ID =10A, VGS =10V , R GS =6Ω tr *1, 2 - 14.2 - tf *1, 2 - 8 - Rg - 1.5 - Ω f=1MHz Source-Drain Diode Ratings and Characteristics IS *1 - - 4 A ISM *3 - - 16 V SD *1 - 0.74 1.2 V IS=1A, VGS =0V trr - 16.8 - ns IF=10A, dIF/dt=100A/μs Qrr - 10.4 - nC Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint
CYStech Electronics Corp. Spec. No. : C016Q8 Issued Date : 2018.08.21 Revised Date : Page No. : 4/9 MTB010N06RQ8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 2 3 4 5 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V,9V,8V,7V,6V,5V,4V VGS=3V 3.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( ƱC) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Curre nt 100 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State œeŴŪŴŵaůceĩŮΩĪ VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25ƱC Tj=150ƱC Static Drain-Source On-State Resistance vs Gate-Sou rce Voltage 100 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- Ŕŵaŵe œeŴŪŴŵaůceĩŮΩĪ ID=10A Drain-Source On-State Resistance vs Junction Tempearture 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( ƱC) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=10A RDS(ON)@ŕū=ijĶƱC : IJIJįĴŮΩ ŵypį
CYStech Electronics Corp. Spec. No. : C016Q8 Issued Date : 2018.08.21 Revised Date : Page No. : 5/9 MTB010N06RQ8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crssf=1MHz Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( ƱC) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed ŕa=ijĶƱC VDS=15V VDS=10V Gate Charge Characteristics 0 5 10 15 20 25 30 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=10A VDS=30V VDS=12V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 100ms 10ms 100μs 1ms RDS(ON) Limited TA=ijĶƱC, ŕū=IJĶıƱC VGS=10V,RθJA=ĵıƱCİŘ Single Pulse Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(ƱC) ID, Maximum Drain Current(A)TA=ijĶƱC,œθJA=ĵıƱCİŘ,ŗGS=10V
CYStech Electronics Corp. Spec. No. : C016Q8 Issued Date : 2018.08.21 Revised Date : Page No. : 6/9 MTB010N06RQ8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0 1 2 3 4 5 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=IJĶıƱC TA=ijĶƱC R θJA=ĵıƱCİŘ Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=ĵıƱCİŘ
CYStech Electronics Corp. Spec. No. : C016Q8 Issued Date : 2018.08.21 Revised Date : Page No. : 7/9 MTB010N06RQ8 CYStek Product Specification Reel Dimension Carrier Tape Dimension
CYStech Electronics Corp. Spec. No. : C016Q8 Issued Date : 2018.08.21 Revised Date : Page No. : 8/9 MTB010N06RQ8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStech Electronics Corp. Spec. No. : C016Q8 Issued Date : 2018.08.21 Revised Date : Page No. : 9/9 MTB010N06RQ8 CYStek Product Specification SOP-8 Dimension DIM Millimeters Inches DIM Millimeters Inches c 0.170 0.250 0.006 0.010 θ 0 8Ʊ 0 8Ʊ D 4.700 5.100 0.185 0.200 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead: Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Date Code Device Name B01 0 N0 6R Date Code(counting from left to right) : 1st code: year code, the last digit of Christian year 2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D May→E, Jun→F, Jul→G , Aug→H, Sep→J, Oct→K, Nov→L, Dec→M 3rd and 4th codes : prodcution serial number, 01~99