MTA025P02Q8 CYSTEKEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
- Simple drive requirement
- Low on-resistance
- Fast switching speed
- Pb-free lead plating package Equivalent Circuit Outline
Ordering Information
MT A025P02 Q8 -0-T3-G SOP -8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel SOP-8 MTA025P02Q8 G ：Gate S：Source D：Drain BV DSS -20V ID @ V GS =-4.5V , TA =25°C -10A R DSON @V GS =-4.5V , ID =-7.6A 14.2mΩ(typ.) R DSON @V GS =-2.5V , ID =-6A 18.0mΩ(typ.) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name Pin 1 S S S G D D D D
CYStech Electronics Corp. Spec. No. : C573Q8 Issued Date : 2018.09.12 Revised Date : Page No. : 2/9 MTA025P02Q8 CYStek Product Specification Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Drain-Source V oltage V DS -20 V Gate-Source V oltage V GS ±8 Continuous Drain Current @ TA =25C, VGS =-4.5V ID -10 A Continuous Drain Current @ TA =70C, VGS =-4.5V -8 Pulsed Drain Current IDM -50 *1 Avalanche Current @ L=0.1mH IAS -30 Avalanche Energy @ L=1mH, ID =-10A, VDD =-15V EAS 50 *4 mJ Repetitive Avalanche Energy @ L=0.05mH EAR 2.5 *2 Total Power Dissipation TA =25℃ PD 3.1 *3 W TA =70℃ 2 *3 Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max R th,j-c 20 C /W Thermal Resistance, Junction-to-ambient, max R th,j-a 40 *3 Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR -4 board, t≤10s ; 125C/W when mounted on minimum copper pad. 4. 100% tested by conditions of L=0.1mH, IAS =-8A, VGS =-10V , VDD =-15V Electrical Characteristics (Tj=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BV DSS -20 - - V V GS =0V , ID =-250μA V GS(th) -0.4 - -1.2 V DS =V GS , ID =-250μA IGSS - - ±100 nA V GS =±8V , VDS =0V IDSS - - -1 μA V DS =-16V , VGS =0V IDSS - - -10 V DS =-16V , VGS =0V , Tj=125C R DS (ON ) *1 - 14.2 20 m V GS =-4.5V, ID =-7.6A GFS *1 - 26.5 - S V DS =-5V , ID =-10A Dynamic Ciss - 2453 - pF V DS =-10V , VGS =0V , f=1MHz Coss - 219 - Crss - 165 -
CYStech Electronics Corp. Spec. No. : C573Q8 Issued Date : 2018.09.12 Revised Date : Page No. : 3/9 MTA025P02Q8 CYStek Product Specification Electrical Characteristics(Cont.) (Tj=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions ns V DD =-10V , ID =-7.6A, V GS =-4.5V , RG =6Ω tr *1, 2 - 11 22 td(OFF) *1, 2 - 113.4 170 tf *1, 2 - 145.8 220 Qg *1, 2 - 24.9 35 nC V DS =-10V , ID =-7.6A, VGS =-4.5V Qgs *1, 2 - 3.5 - Qgd *1, 2 - 5.4 - Rg - 18 - f=1MHz Source-Drain Diode IS *1 - - -4 A ISM *3 - - -16 V SD *1 - -0.75 -1.2 V IS=-2A, VGS =0V trr - 53.8 - ns IF=-2A, dIF/dt=100A/μs Qrr - 34.8 - nC Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint
CYStech Electronics Corp. Spec. No. : C573Q8 Issued Date : 2018.09.12 Revised Date : Page No. : 4/9 MTA025P02Q8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 2 3 4 5 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) -VGS=1.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 ŕū, JŶůcŵŪŰů ŕeŮűeųaŵŶųeĩ°CĪ -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Curre nt 100 0.01 0.1 1 10 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State œeŴŪŴŵaůceĩŮΩĪ VGS=-2.5V -3V -4.5V -5V -10V Source Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 4 8 12 16 20 -IS, Source Drain Current(A) -VSD, Source-Drain Voltage(V) VGS=0V ŕū=ijĶ°C ŕū=IJĶı°C Static Drain-Source On-State Resistance vs Gate-Sou rce Voltage 100 0 2 4 6 8 10 -VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- Ŕŵaŵe œeŴŪŴŵaůceĩŮΩĪ ID=-7.6A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 ŕū, JŶůcŵŪŰů ŕeŮűeųaŵŶųeĩ°CĪ RDS(on), Normalized Static Drain-Source On-State Resistance VGS=-4.5V, ID=-7.6A RDS(ON)@ŕū=ijĶ°C : IJĵįij ŮΩ ŵyűį
CYStech Electronics Corp. Spec. No. : C573Q8 Issued Date : 2018.09.12 Revised Date : Page No. : 5/9 MTA025P02Q8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 ŕū, JŶůcŵŪŰů ŕeŮűeųaŵŶųeĩ°CĪ -VGS(th), normliz Threshold Voltage ID=-250μA ID=-1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=-5V Pulsed TA=ijĶ°C Gate Charge Characteristics 0 5 10 15 20 25 30 35 40 45 50 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-7.6A VDS=-10V VDS=-15V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -ID, Drain-Source Voltage(V) -ID, Drain Current(A) DC 100ms 10ms 100μs TA=ijĶ°C, ŕū=IJĶı°C, ŗGS=-10V RθJA=ĵı°CİŘ, ŔŪůgŭe PŶŭŴe 1ms Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, JŶůcŵŪŰů ŕeŮűeųaŵŶųeĩ°CĪ -ID, Maximum Drain Current(A)TA=ijĶ°C, ŗGS=-10V, RθJA=ĵı°CİŘ
CYStech Electronics Corp. Spec. No. : C573Q8 Issued Date : 2018.09.12 Revised Date : Page No. : 6/9 MTA025P02Q8 CYStek Product Specification Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Peak Transient Power (W) TJ(MAX)=IJĶı°C TA=ijĶ°C RθJA=ĵı°CİŘ Typical Transfer Characteristics 0 1 2 3 4 5 -VGS, Gate-Source Voltage(V) -ID, Drain Current (A) VDS=-5V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W
CYStech Electronics Corp. Spec. No. : C573Q8 Issued Date : 2018.09.12 Revised Date : Page No. : 7/9 MTA025P02Q8 CYStek Product Specification Reel Dimension Carrier Tape Dimension
CYStech Electronics Corp. Spec. No. : C573Q8 Issued Date : 2018.09.12 Revised Date : Page No. : 8/9 MTA025P02Q8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStech Electronics Corp. Spec. No. : C573Q8 Issued Date : 2018.09.12 Revised Date : Page No. : 9/9 MTA025P02Q8 CYStek Product Specification SOP-8 Dimension DIM Millimeters Inches DIM Millimeters Inches C 0.19 0.25 0.007 0.010 α 0 8° 0 8° E 3.80 4.00 0.150 0.157 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead: Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Date Code Device Name A 025 P02