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MT907-PRSS Visible Light Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) SYMBOL MIN TYP MAX UNIT PO 6.4 7.9 mW Iv (1500) mcd VF 1.8 2.2 V IR 100 μA λp 660 nm Δλ 25 nm θ ±12 deg. Tr 30 nS Tf 30 nS Cj 20 pF I/T -0.5 %/℃ V/T -1.5 mV/℃ ① Anode ② Cathode FEATURES ･High Power Output ･Narrow Beam Angle ･High Reliability ･Stand-off Type APPLICATIONS ･Optical Sensor ･Indicators 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL UNIT IF mA IFP A VR V PD mW Topr ℃ Tstg ℃ Tj ℃ Tls ℃ *2:Time 3 Sec max,Position:Up to 2mm from the body 100 260Lead Soldering Temp.*2 *1:Tw=10uS,T=10mS RATINGS Dimensions (Unit:mm) 0.5 120 -20 TO 80 -30 TO 100 Power Dissipation Operating Temp. Storage Temp. Junction Temp. I T E M Forward Current (DC) Forward Current (Pulse)*1 Reverse Voltage CONDITIONS IF=20mA IF=20mA IF=20mA IFP=20mA IFP=20mA IF=10mA VR=5V IF=20mA IF=20mA IF=20mA 1MHz ,V=0V I T E M Power Output Luminous Intensity Forward Voltage Temp. Coefficient of VF IF=10mA Temp. Coefficient of Iv Reverse Current Peak Wavelength Spectral Line Half Width Half Intensity Beam Angle Rise Time Fall Time Junction Capacitance THERMAL DERATING CURVE -30 0 30 60 90 AMBIENT TEMPERATURE(℃) FORWARD CURRENT(mA) FORWARD I-V CHARACTERISTICS 0123 FORWARD VOLTAGE(V) FORWARD CURRENT(mA) LUMINOUS INTENSITY vs TEMPERATURE IF=10mA 100 120 140 - 3 00 3 06 09 0 AMBIENT TEMPERATURE(℃) LUMINOUS INTENSITY(%) SPECTRAL OUTPUT 100 120 610 660 710 WAVELENGTH(nm) RELATIVE POWER OUTPUT(%) RADIATION PATTERN 100 120 -90 -60 -30 0 30 60 90 BEAM ANGLE(deg.) RELATIVE POWER OUTPUT(%) FORWARD VOLTAGE vs TEMPERATURE IF=10mA 0.5 1.5 2.5 - 3 00 3 06 09 0 AMBIENT TEMPERATURE(℃) FORWARD VOLTAGE(V) OPTRANS RELATIVE POWER vs FORWARD CURRENT 100 200 300 0 1 02 03 04 05 06 0 FORWARD CURRENT(mA) RELATIVE POWER OUTPUT(%) 2008/1/29 VSF365S1 To purchase this part contact Marktech Optoelectronics at 800.984.5337 Optoelectronics www.marktechopto.com Marktech