MT81P03

MT81P03 MTSEMI | Alldatasheet

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Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. Absolute Maximum Ratings(TA =2 5 unless otherwise noted) @VGS= -4.5V @VGS= -10V G D S Symbol Parameter 10s Steady State Units VDS Drain-SourceVoltage -30 V VGS Gate-SourceVoltage ±20 V ID ContinuousDrainCurrent -80 A IDM PulsedDrainCurrent -220 A IS ContinuousSourceCurrent(DiodeConduction) 1 -2.7 -1.36 A PD MaximumPowerDissipation 1 25 W TJ,Tstg OperatingJunctionandStorageTemperatureRange -55to150 Thermal Resistance Ratings Symbol Parameter Typical Maximum Unit RthJA MaximumJunction-to-Ambient 1 t 10Sec 33 42 /WSteadyState 70 85 RthJF MaximumJunction-to-Foot(Drain) SteadyState 16 21 Notes: 1. SurfaceMountedon1”x1”FR4Board.

Electrical Characteristics(TA=25°C,unlessotherwisenoted) Symbol Parameter Test Condition Min Typ Max Unit Static Characteristics BVDSS Drain-SourceBreakdownVoltage VGS=0V,ID=-250µA -30 - - V VGS(th) GateThresholdVoltage VGS=VDS,ID =-250µA -1.0 -1.5 -3.0 V IGSS Gate-BodyLeakageCurrent VGS=±20V ,VDS=0V -- ± 1 0 0 n A IDSS ZeroGateVoltageDrainCurrent VDS=-24V ,VGS =0V --- 1 µA VDS=-24V ,VGS =0V ,TJ=70 -- 1 0 RDS(on) DrainSourceOnStateResistance a VGS=-10V,I D =-13A mΩ VGS=-4.5V ,ID =-10A gfs ForwardTransconductance a VDS=-15V ,ID =-13A -4 0-S VSD DiodeForwardVoltage a IS =-2.7A,V GS=0V -- 0 . 7 4 - 1 . 1V Dynamic Characteristics b Note: a.Pulsetest;pulsewidth 300µs,dutycycle 2%. b.Guaranteedbydesign,notsubjecttoproductiontesting. Ciss InputCapacitance VDS=-8V ,VGS=0V,Frequency=1MHz -2 7 0 0- pFCoss OutputCapacitance - 515 - Crss ReverseTransferCapacitance - 445 - Qg Total Gate Charge VDS=-15V ,VGS =-5V ,ID=-13A -6 0- nCQgs Gate-SourceCharge - 9.3 - Qgd Gate-DrainCharge - 15 - td(on) Turn-OnDelayTime - 12 - nSec tr RiseTime -1 1- Td(off) Turn-OffDelayTime - 40 - tf FallTime -1 2- Rg GateResistance VGS=0,VDS=0,f=1MHz -3 . 4-Ω trr Source-DrainReverseRecoveryTime IF=-2.1A,di/dt=100A/µs - 60 100 nSec VDD=-15V ,RL =1.5Ω ID=-10A,V GEN =-10V,R G =1Ω MT81P03 ZZZPWVHPLFRP

VGS = 10 V thru 5 V VGS =4V VGS =3V VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID Transfer Characteristics 01234 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D On-Resistance vs. Drain Current 0.000 0.005 0.010 0.015 0.020 0 2 04 06 08 0 1 0 0 VGS =1 0V VGS =4 . 5V - On-Resistance (Ω)RDS(on) ID - Drain Current (A) Capacitance 1000 2000 3000 4000 0 5 10 15 20 25 30 Ciss Coss Crss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Gate Charge 0 2 04 06 08 0 VDS =2 4V ID VDS =1 5V VDS =8V - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS On-Resistance vs. Junction Temperature TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 ID VGS =1 0V =10A =10A MT81P03 ZZZPWVHPLFRP

Source-Drain Diode Forward Voltage 0.1 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S On-Resistance vs. Gate-to-Source Voltage 0.00 0.01 0.02 0.03 0.04 0.05 2468 1 0 TJ = 25 °C TJ = 150 °C - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) Threshold Voltage - 2.2 - 1.9 - 1.6 - 1.3 - 1.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA (V)VGS(th) TJ - Temperature (°C) Safe Operating Area 0.01 0.1 100 1000 0.1 1 10 100 1s ,1 0s ,D C TA = 25 °C Single Pulse BVDSS Limited Limited by RDS(on)* 1m s 10 ms, 100 ms 100 μA VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified - Drain Current (A)ID Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 11 010-1 Normalized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 0.02 0.05 Single Pulse MT81P03 ZZZPWVHPLFRP

0.0200.508L2 DIMENSION IN MILLIMETERS 2.184 MIN. A S Y M B O L NOM. 2.286 MAX. 2.388 MAX. DIMENSIONS IN INCHES 0.086 MIN. NOM. 0.090 0.094 0.0240.018c1 0.450 0.610 e 2.286 BSC e1 4.572 BSC

0.090 BSC

0.180 BSC

1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS. MOLD FLASH SHOULD BE LESS THAN 6 MILS. 2. DIMENSION L IS MEASURED IN GAUGE PLANE 3. TOLERANCE 0.10 mm UNLESS OTHERWISE SPECIFIED 4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT. 5. REFER TO JEDEC TO-252 (AA) UNIT: mm RECOMMENDED LAND PATTERN 6.25 MIN. 6.80 MIN. 6.60 3.00 MIN. 1.50 MIN. 2.286

4.572 BSC

D2 0.762 0.030 0.170E1 4.318 0.070E2 1.778 4.826 4.901 0.190 0.193 0.115REF.2.921 REF. 0.508 0.020 0.408 0.608 0.024 0.016 1.678 1.878 0.066 0.074 0.662 0.862 0.026 0.034 ZZZPWVHPLFRP

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