MT75DT18L1 APTSEMI | Alldatasheet

Document overview

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Technical content

Features

y Blocking voltage:800 to 1800V y Three Phase Bridge and a Thyristor y Isolated Module package

Applications

y Inverter for AC or DC motor control y Current stabilized power supply y Switching power supply y UL recognized applied for file no. E360040 TYPE VRRM /VDRM VRSM MT75DT08L1 MT75DT12L1 MT75DT16L1 MT75DT18L1 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V Circuit Symbol Item Conditions Values Units VFM Forward Voltage Drop, max. T=25℃ IF =100A 1.40 V IRRM Repetitive Peak Reverse Current, max. Tvj =25℃ VRD=VRRM Tvj =150℃ VRD=VRRM ≤0.5 mA mA

Document Number: S - M 0 0 5 6 www.apt-semi.com Rev.1.0, May.31, 2013 2 ◆Thyristor Maximum Ratings Electrical and Thermal Characteristics Symbol Item Conditions Values Units Min. Typ. Max. VTM Peak On-State Voltage, max. T=25℃ I T =100A 1.30 V IRRM/IDRM Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. TVJ=TVJM ,V R=VRRM ,V D =VDRM 20 mA VGT Gate Trigger Voltage, max. TVJ =25℃ , V D =6V 3 V IGT Gate Trigger Current, max. TVJ =25℃ , V D =6V 150 mA Rth(j-c) Thermal Impedance, max. Junction to Case 0.30 ℃/W Rth(c-s) Thermal Impedance, max. Case to Heatsink 0.10 ℃/W Symbol Item Conditions Values Units ITAV Average On-State Current Tc=99℃, Single Phase half wave 180o conduction 75 A ITSM Surge On-State Current TVJ=45 ℃ t=10ms (50Hz), sine VR=0 920 A i2t Circuit Fusing Consideration 4200 A 2s Tvj Operating Junction Temperature -40 to +125 ℃ Tstg Storage Temperature -40 to +125 ℃ Mt Mounting Torque To terminals(M5) 3±15% Nm Ms To heatsink(M5) 3±15% Nm di/dt Critical Rate of Rise of On-State Current TVJ=TVJM, VD=1/2VDRM ,IG =100mA diG/dt=0.1A/μs 150 A/ μs dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM,VD=2/3VDRM,linear voltage rise 500 V/ μs

Document Number: S - M 0 0 5 6 www.apt-semi.com Rev.1.0, May.31, 2013 3 Performance Curves Fig1. Power dissipation Fig2. Forward Current Derating Curve Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge Current Fig5. Forward Characteristics 0.001 t 0.01 0.1 1.0 10 S 100 0.40 ℃/ W 0.20 Zth(j-C) 1 1 0 c y c l e s 1 0 0 50HZ 2000 A 1000 1000 A 100 IF max. Tj=25℃

0 Tc 50 100 ℃ 150

A ID Fig6. SCR Power dissipation Single phase half wave Tj=25℃ start Per one element Three phase

0 I D 2 0 4 0 6 0 A 8 0

W 200 150 100 Pvtot Three phase

0 I T A V 2 0 4 0 6 0 A 8 0

W PTAV

Document Number: S - M 0 0 5 6 www.apt-semi.com Rev.1.0, May.31, 2013 4 Average Gate Power (3W) Peak Gate Power (10W) Fig10. Gate trigger Characteristics Fig7. SCR Forward Current Derating Curve Fig8. SCR Transient thermal impedance Fig9. SCR Forward Characteristics max. A ITAVM 0.001 t 0.01 0.1 1.0 10 S 100 0.50 ℃/ W 0.25 1000 A 100 IT Tj=25℃ Zth(j-C)

101 I G 1 0 2 1 0 3 m A 1 0 4

Peak Forward Gate Voltage (10V) 100 V VG 0.1 Maximum Gate Non-Trigger Voltage25℃ -10℃ 135℃ Peak Gate Current (3A)

Document Number: S - M 0 0 5 6 www.apt-semi.com Rev.1.0, May.31, 2013 5 Package Outline Information CASE: L1 Dimensions in mm