MT60C18T1 APTSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

y International standard package y High Surge Capability y Glass passivated chip y Simple Mounting y Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate y UL recognized applied for file no. E360040 TYPE VRRM VRSM MT60C08T1 MT60C12T1 MT60C16T1 MT60C18T1 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V Symbol Conditions Values Units ITAV Sine 180o;Tc=85℃ 60 A ITSM TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 1500 1250 A i2t TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 11000

8000 A2s

Tvj -40 to 125 ℃ Tstg -40 to 125 ℃ Mt To terminals(M5) 3±15% Nm Ms To heatsink(M6) 5±15% Nm di/dt TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt T J= TVJM ,2/3VDRM, linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s 2 Weight Module(Approximately) 100 g Symbol Conditions Values Units Rth(j-c) Cont.;per thyristor / per module 0.57/0.29 ℃/W Rth(c-s) per thyristor / per module 0.2/0.1 ℃/W Circuit

Applications

y DC Motor Control and Drives y Heat and temperature control

D o c u m e n t N u m b e r : S - M 0 0 3 5 www.apt-semi.com Rev.1.0, May.31, 2013 2

Electrical Characteristics

Symbol Conditions Values Units Min. Typ. Max. VTM T=25℃ I TM =200A 1.65 V IRRM/IDRM T VJ =TVJM ,VR=VRRM ,VD=VDRM 15 mA VTO For power-loss calculations only (TVJ =125℃) 0.9 V rT T VJ =TVJM 3.5 m Ω VGT TVJ =25℃ , V D =6V 3.0 V IGT TVJ =25℃ , V D =6V 150 mA VGD TVJ =125℃ , V D =2/3VDRM 0.25 V IGD TVJ =125℃ , V D =2/3VDRM 6 mA IL TVJ =25℃ , R G = 33 Ω 300 600 mA IH TVJ =25℃ , V D =6V 150 250 mA tgd TVJ =25℃, IG=1A, diG/dt=1A/us 1 us tq T VJ =TVJM 80 us

D o c u m e n t N u m b e r : S - M 0 0 3 5 www.apt-semi.com Rev.1.0, May.31, 2013 3 Performance Curves Fig1. Power dissipation Fig2.Forward Current Derating Curve

0 I T A V 2 5 2 5 A 7 5

W PTAV rec.30 rec.60 rec.120 sin.180 DC Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge Current Fig5. Forward Characteristics 0.001 t 0.01 0.1 1 10 S 100 1.0 ℃/ W 0.5 Zth(j-C) Zth(j-S) 10 100 ms 1000 50HZ 2000 A 1000 250 A 200 150 100 IT max. Typ. DC sin.180 rec.120 rec.60 rec.30 ITAVM A

0 Tc 50 100 ℃ 130

25℃ - - -125℃

D o c u m e n t N u m b e r : S - M 0 0 3 5 www.apt-semi.com Rev.1.0, May.31, 2013 4 Package Outline Information CASE: T1 Dimensions in mm Fig6. Gate trigger Characteristics 1/2·MT60C18T1 VGD125℃ IGD125℃ IGT VGT 20V;20Ω PG(tp) 0.001 I G 0 . 0 1 0 . 1 1 1 0 A 1 0 0 100 V V G 0.1 -40℃ 25℃ 125℃ Tvj