MT275C18T3 APTSEMI | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
y International standard package y High Surge Capability y Simple Mounting TYPE VRRM VRSM MT275C08T3 MT275C12T3 MT275C16T3 MT275C18T3 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V Symbol Conditions Values Units ITAV Sine 180o;Tc=85℃ 275 A ITSM TVJ =45℃ t=10ms, sine 8000 A i2t TVJ =45℃ t=10ms, sine 320000 A 2s Tvj -40 to 125 ℃ Tstg -40 to 125 ℃ di/dt TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt T J= TVJM ,2/3VDRM, linear voltage rise 1000 V/us Weight Module(Approximately) 600 g Symbol Conditions Values Units Rth(j-c) Cont.;per module 0.13 ℃/W Rth(c-s) per module 0.03 ℃/W Circuit
Applications
y DC Motor Control and Drives y Heat and temperature control
Document Number: S - M 0 0 4 1 www.apt-semi.com Rev.1.0, May.31, 2013 2
Electrical Characteristics
Symbol Conditions Values Units Min. Typ. Max. VTM T=25℃ I TM =750A 1.6 V IRRM/IDRM T VJ =TVJM ,VR=VRRM ,VD=VDRM 30 mA PGM 12 W IGM 3 A VGT TVJ =25℃ , V D =6V 2 V IGT TVJ =25℃ , V D =6V 150 mA IL TVJ =25℃ , R G = 33 Ω 400 mA IH TVJ =25℃ , V D =6V 200 mA Fig1. Power dissipation Fig2.Forward Characteristics
0 I TAV 100 200 A 300
W 300 200 100 PTAV rec.30 rec.60 rec.120 sin.180 Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge Current 0.001 t 0.01 0.1 1 10 S 100 0.2 ℃/ W 0.1 Zth(j-C) 10 100 ms 1000 50HZ 8000 A 4000 1000 A 800 600 400 200 I T 0 V T M 0 . 5 1 . 0 1 . 5 V 2 . 0 25℃ - - -125℃ Typ. Max rec.180 cont rec.90
Document Number: S - M 0 0 4 1 www.apt-semi.com Rev.1.0, May.31, 2013 3 Package Outline Information CASE: T3 Dimensions in mm Fig5. Gate trigger Characteristics 0.001 I G 0 . 0 1 0 . 1 1 1 0 A 1 0 0 100 V V G 0.1 1/2·MT275C18T3