MT25 WTE | Alldatasheet

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Features

! Glass Passivated Die Construction ! Low Forward Voltage Drop ! H i g h C u r r e n t C a p a b i l i t y D ! H i g h R e l i a b i l i t y ~ - ~ ! H i g h S u r g e C u r r e n t C a p a b i l i t y H ! Ideal for Printed Circuit Boards ! UL Recognized File # E157705 E A ~ + Mechanical Data G ! Case: Epoxy Case with Heat Sink Internally Mounted in the Bridge Encapsulation ! Terminals: Plated Leads Solderable per C MIL-STD-202, Method 208 B ! Polarity: As Marked on Body ! Weight: 20 grams (approx.) Metal Heat Sink ! Mounting Position: Bolt Down on Heatsink With Silicone Thermal Compound Between Bridge and Mounting Surface for Maximum Heat Transfer Efficiency ! Mounting Torque: 20 in. lbs Max. ! Marking: Type Number Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Voltage Ratings Characteristics Symbol -00 -01 -02 -04 -06 -08 -10 -12 -14 -16 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 50 100 200 400 600 800 1000 1200 1400 1600 V Peak Non-Repetitive Reverse Voltage V RSM 75 150 275 500 725 900 1100 1300 1500 1700 V RMS Reverse Voltage V R(RMS) 35 70 140 280 420 560 700 840 980 1120 V Forward Conduction Characteristic Symbol MT25 MT35 Unit Average Rectified Output Current MT25 @T C = 70°C, MT35 @ TC = 60°C IO 25 35 A Non-Repetitive Peak Forward Surge Current (No Voltage Reapplied t = 8.3ms at 60Hz) (No Voltage Reapplied t = 10ms at 50Hz) ( 1 0 0 % V RRM Reapplied t = 8.3ms at 60Hz) ( 1 0 0 % VRRM Reapplied t = 8.3ms at 50Hz) IFSM 375 360 314 300 500 475 420 400 A WTE POWER SEMICONDUCTORS MT Dim Min Max A 28.40 28.70 B 10.97 11.23 C 22.86 23.86 D — 25.30 E 16.00 Typical G 6.35 x 0.80 H 5.10 Ø 5.30 Ø All Dimensions in mm

M T25, 35 SER IES 2 of 6 © 2002 W on-Top Electronics I2t Rating for Fusing (No-Voltage Reapplied t = 8.3ms at 60Hz) (No-Voltage Reapplied t = 10ms at 50Hz) (100% V RRM Reapplied t = 8.3ms at 60Hz) (100% VRRM Reapplied t = 10ms at 50Hz) I2t 580 635 410 450 1030 1130 730 800 A Forward Voltage (per element) j = 25°C, @IFM = 40Apk per single junction VF 1.26 1.19 V Peak Reverse Current (per leg) @Tj = 25°C At Rated DC Blocking Voltage @Tj = 125°C IR 5.0 µA mA RMS Isolation Voltage from Case to Lead V ISO 2500 V Thermal Characteristics Operating Temperature Range T j -40 to +150 °C Storage Temperature Range T STG -40 to +150 °C Thermal Resistance Junction to Case at DC Operation per Bridge R /G01JC 1.42 1.16 K/W Thermal Resistance Case to Heatsink Mounting Surface, Smooth, Flat and GreasedR /G01CS 0.2 K/W

Fig. 1 - Current Ratings Characteristics Fig. 2 - Forward Voltage Drop Characteristics Fig. 3 - Total Power Loss Characteristics Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 100 120 140 160 0 5 10 15 20 25 30 120° (Rect) MT25 Series Total Output Current (A) M aximum Allowable Case Tem per ature (°C) 100 1000 00 . 511 . 522 . 533 . 54 Instantaneous Forward Voltage (V) Inst antan eous F orwar d Curr ent (A) MT25 Series Per Junction T = 15O°C T = 25°C J J 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C)

10 K/W

7 K/W

5 K/W

4 K/W

3 K/W

2 K/W

1 K/W

R = 0.7 K/W - Delta R thSA 0 5 10 15 20 25 120° (Rect) Total Output Current (A) Ma xi mu m To ta l Po wer Lo s s (W) MT25 Series T = 150°CJ 100 120 140 160 180 200 220 240 260 280 300 320 1 10 100 Peak Half Sine W ave Forward Current (A) Num ber Of Equal Amplitude Half Cycle Current Pulses (N) MT25 Series Initial T = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any Rated Load Condition And W ith Rated V Applied Following Surge.RRM J 120 160 200 240 280 320 360 400 0.01 0.1 1 Peak Half Sine W ave F orw ard Current (A) Pulse Train Duration (s) Maximum Non Repetitive Surge Current MT25 Series Initial T = 150°C No Voltage Reapplied Rated V ReappliedRRM Versus Pulse Train Duration. J M T25, 35 SER IES 3 of 6 © 2002 W on-Top Electronics

Fig. 6 - Current Ratings Characteristics Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Total Power Loss Characteristics Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current 110 130 150 0 5 10 15 20 25 30 35 40 120° (Rect) MT35 Series Maximum Allowable Case Temperature (°C) Total Output Current (A) 100 1000 00 . 511 . 522 . 533 . 54 Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) MT35 Series T = 15O°C T = 25°C J J Per Junction 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) R = 0.7 K/W - D elta R thSA 120° (Rect) Total Output Current (A) Ma xi mum T otal P owe r Loss ( W) MT35 Series T = 15 0°CJ 100 150 200 250 300 350 400 450 1 10 100 Peak Half Sine Wave Forward C urrent (A) Number Of Equal Amplitude Half Cycle Current Pulses (N) MT35 Series Initial T = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any Rated Load Condition And With Rated V Applied Following Surge.RRM J 100 150 200 250 300 350 400 450 500 0.01 0.1 1 Peak H alf Sine Wave Forw ard Current (A) Pulse Train Duration (s) Maximum Non Repetitive Surge Current Initial T = 150°C No Voltage Reapplied Rated V ReappliedRRM Versus Pulse Train Duration. J MT35 Series M T25, 35 SER IES 4 of 6 © 2002 W on-Top Electronics

Fig. 11 - Thermal Impedance ZthJC Characteristics Fig. 12 - Thermal Impedance ZthJC Characteristics 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) MT35 Series Per Bridge Transient Thermal Impedance Z (K/W)thJC Steady State Value: R = 1.16 K/W (DC O peration) thJC 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) MT25 Series Per Bridge Transient Thermal Impedance Z (K/W)thJC Steady State Value: R = 1.42 K/W (DC Operation) thJC M T25, 35 SER IES 5 of 6 © 2002 W on-Top Electronics

MT25, 35 SERIES 6 of 6 © 2002 Won-Top Electronics

ORDERING INFORMATION

Product No. Package Type Shipping Quantity MT2500 Square Bridge 50 Units/Box MT2501 Square Bridge 50 Units/Box MT2502 Square Bridge 50 Units/Box MT2504 Square Bridge 50 Units/Box MT2506 Square Bridge 50 Units/Box MT2508 Square Bridge 50 Units/Box MT2510 Square Bridge 50 Units/Box MT2512 Square Bridge 50 Units/Box MT2514 Square Bridge 50 Units/Box MT2516 Square Bridge 50 Units/Box MT3500 Square Bridge 50 Units/Box MT3501 Square Bridge 50 Units/Box MT3502 Square Bridge 50 Units/Box MT3504 Square Bridge 50 Units/Box MT3506 Square Bridge 50 Units/Box MT3508 Square Bridge 50 Units/Box MT3510 Square Bridge 50 Units/Box MT3512 Square Bridge 50 Units/Box MT3514 Square Bridge 50 Units/Box MT3516 Square Bridge 50 Units/Box Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com