MT200DT18L2 APTSEMI | Alldatasheet

Document overview

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Technical content

Features

y Blocking voltage:800 to 1800V y Three Phase Bridge and a Thyristor y Low Forward Voltage

Applications

y Inverter for AC or DC motor control y Current stablilzed power supply y Switching power supply y UL recognized applied for file no. E360040 Symbol Item Conditions Values Units VFM Forward Voltage Drop, max. T=25℃ IF =200A 1.35 V IRRM Repetitive Peak Reverse Current, max. Tvj =25℃ VRD=VRRM Tvj =150℃ VRD=VRRM ≤10 mA mA

Document Number: S - M 0 0 6 6 www.apt-semi.com Rev.1.0, May.31, 2013 2 ◆Thyristor Maximum Ratings Electrical and Thermal Characteristics Symbol Item Conditions Values Units ITAV Average On-State Current Tc=93℃, Single Phase half wave 180o conduction 200 A ITSM Surge On-State Current TVJ=45 ℃ t=10ms (50Hz), sine VR=0 1900 A i2t Circuit Fusing Consideration 18050 A 2s Tvj Operating Junction Temperature -40 to +125 ℃ Tstg Storage Temperature -40 to +125 ℃ Mt Mounting Torque To terminals(M4) 2±15% Nm Mt To terminals(M6) 5±15% Ms To heatsink(M6) 5±15% Nm di/dt Critical Rate of Rise of On-State Current TVJ=TVJM, VD=1/2VDRM ,IG =100mA diG/dt=0.1A/μs 200 A/ μs dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM,VD=2/3VDRM,linear voltage rise 500 V/ μs Symbol Item Conditions Values Units Min. Typ. Max. VTM Peak On-State Voltage, max. T=25℃ I T =200A 1.40 V IRRM/IDRM Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. TVJ=TVJM ,V R=VRRM ,V D =VDRM 100 mA VGT Gate Trigger Voltage, max. TVJ =25℃ , V D =6V 3 V IGT Gate Trigger Current, max. TVJ =25℃ , V D =6V 150 mA Rth(j-c) Thermal Impedance, max. Junction to Case 0.14 ℃/W Rth(c-s) Thermal Impedance, max. Case to Heatsink 0.06 ℃/W

Document Number: S - M 0 0 6 6 www.apt-semi.com Rev.1.0, May.31, 2013 3 Performance Curves Fig1. Power dissipation Fig2. Forward Current Derating Curve Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge Current Fig5. Forward Characteristics 0.001 t 0.01 0.1 1.0 10 S 100 0.20 ℃/ W 0.10 Zth(j-C) 1 1 0 c y c l e s 1 0 0 50HZ 2500 A 2000 1500 1000 500 1000 A 100 IF max. Tj=25℃

0 Tc 50 100 ℃ 150

A 200 150 100 ID Fig6. SCR Power dissipation Single phase half wave Tj=25℃ start Per one element Three phase

0 I D 40 80 120 160 A 200

W 400 300 200 100 Pvtot Three phase 250 W 200 150 100 PTAV

Document Number: S - M 0 0 6 6 www.apt-semi.com Rev.1.0, May.31, 2013 4 Peak Gate Power (10W) Average Gate Power (3W) Fig7. SCR Forward Current Derating Curve Fig8. SCR Transient thermal impedance A 200 150 100 ITAVM 0.001 t 0.01 0.1 1.0 10 S 100 0.20 ℃/ W 0.10 Zth(j-C) Fig9. SCR Forward Characteristics max. 1000 A 100 IT Tj=25℃ Fig10. Gate trigger Characteristics max.

101 I G 1 0 2 1 0 3 m A 1 0 4

Peak Forward Gate Voltage (10V) 102 V 101 100 VG 0.1 Maximum Gate Non-Trigger Voltage25℃ -10℃ 135℃ Peak Gate Current (3A)

Document Number: S - M 0 0 6 6 www.apt-semi.com Rev.1.0, May.31, 2013 5 Package Outline Information CASE: L2 Dimensions in mm