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Technical content

Features

 International standard package  High Surge Capability  Glass passivated chip  Simple Mounting  Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate  UL recognized applied for file no. E360040 TYPE VRRM VRSM MT130C08T2 MT130C12T2 MT130C16T2 MT130C18T2 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V Symbol Conditions Values Units ITAV Sine 180o;Tc=85℃ 130 A ITSM TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 4700 4000 A i2t TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 110000

80000 A2s

Tvj -40 to 130 ℃ Tstg -40 to 125 ℃ Mt To terminals(M6) 3±15% Nm Ms To heatsink(M6) 5±15% Nm di/dt TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 200 A/us dv/dt TJ= TVJM ,2/3VDRM, linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Weight Module(Approximately) 165 g Symbol Conditions Values Units Rth(j-c) Cont.;per thyristor / per module 0.18/0.09 ℃/W Rth(c-s) per thyristor / per module 0.1/0.05 ℃/W Circuit 1 32

Applications

 Power Converters  Lighting Control  DC Motor Control and Drives  Heat and temperature control S-M038 www.21yangjie.com Rev.2.0, 27-May-17 1

Electrical Characteristics

Symbol Conditions Values Units Min. Typ. Max. VTM T=25℃ ITM =500A 1.8 V IRRM/IDRM TVJ =TVJM ,VR=VRRM ,VD=VDRM 40 mA VTO For power-loss calculations only (TVJ =125℃) 1 V rT TVJ =TVJM 1.6 mΩ VGT TVJ =25℃ , VD =6V 3 V IGT TVJ =25℃ , VD =6V 150 mA VGD TVJ =125℃ , VD =2/3VDRM 0.25 V IGD TVJ =125℃ , VD =2/3VDRM 10 mA IL TVJ =25℃ , RG = 33 Ω 300 1000 mA IH TVJ =25℃ , VD =6V 150 400 mA tgd TVJ =25℃, IG=1A, diG/dt=1A/us 1 us tq TVJ =TVJM 100 us S-M038 www.21yangjie.com Rev.2.0, 27-May-17 2

Fig1. Power dissipation Fig2.Forward Current Derating Curve

0 I TAV 50 100 150 A 200

W 200 150 100 PTAV rec.30 rec.60 rec.120 sin.180 DC Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge Current Fig5. Forward Characteristics 0.001 t 0.01 0.1 1 10 S 100 0.30 ℃/ W 0.15 Zth(j-C) Zth(j-S) 10 100 ms 1000 50HZ 6000 A 3000 0 V TM 0.5 1.0 1.5 V 2.0 600 A 400 200 I T max. Typ. DC sin.180 rec.120 rec.60 rec.30 ITAVM

0 Tc 50 100 ℃ 130

A 200 150 100 25℃ - - -125℃ S-M038 www.21yangjie.com Rev.2.0, 27-May-17 3

Package Outline Information CASE: T2 Dimensions in mm Fig6. Gate trigger Characteristics 1/2·MT130C18T2 VGD125℃ IGD125℃ IGT VGT 20V;20Ω 150W(0.1ms) 100W(0.5ms) 50W(8ms) PG(tp) 0.001 I G 0.01 0.1 1 10 A 100 100 V VG 0.1 -40℃ 25℃ 125℃ Tvj YJ S-M038 www.21yangjie.com Rev.2.0, 27-May-17 4